RESISTIVE ELECTRODES ON FERROELECTRIC DEVICES FOR LINEAR PIEZOELECTRIC PROGRAMMING

    公开(公告)号:US20230054128A1

    公开(公告)日:2023-02-23

    申请号:US17821789

    申请日:2022-08-23

    Abstract: Disclosed are ferroelectric devices including devices for performing a multiplication of analog input signals and resonators. In one aspect, a ferroelectric nanoelectromechanical device includes a first structural beam, a first input electrode disposed on a first top portion of the first structural beam, and an output electrode. The apparatus further includes a first ferroelectric film disposed on a second top portion of the first input electrode, and a first resistive layer disposed on a third top portion of the first ferroelectric film, wherein a first electrode is positioned at a first end of the first resistive layer and a second electrode is positioned at a second end of the first resistive layer.

    PROGRAMMABLE ULTRASONIC FIELD DRIVEN MICROFLUIDICS

    公开(公告)号:US20210101148A1

    公开(公告)日:2021-04-08

    申请号:US17065459

    申请日:2020-10-07

    Abstract: In one aspect a high frequency ultrasonic microfluidic flow control device is disclosed. The device includes an array of ultrasonic transducers arranged to direct ultrasound to a microfluidic channel. The device further includes one or more driver circuits. Each ultrasonic transducer is associated with one of the one or more driver circuits, and each ultrasonic transducer is driven by a driver signal from the associated driver circuit. The array of ultrasonic transducers and one or more driver circuits are produced in the same semiconductor fabrication process. The device further includes one or more electrical contacts associated with each ultrasonic transducer in the array if ultrasonic transducers, wherein the one or more electrical contacts associated with each ultrasonic transducer applies the driver signal from the associated ultrasonic driver circuit.

    ACOUSTIC SENSING SYSTEMS, DEVICES AND METHODS

    公开(公告)号:US20210003534A1

    公开(公告)日:2021-01-07

    申请号:US15733459

    申请日:2019-02-04

    Abstract: Disclosed are devices, systems and methods for touch, force and/or thermal sensing by an ultrasonic transceiver chip. In some aspects, an ultrasonic transceiver sensor device includes a semiconductor substrate; a CMOS layer attached to the substrate; an array of piezoelectric transducers coupled to the CMOS layer to generate ultrasonic pulses; and a contact layer attached to the substrate on a side opposite the substrate for providing a surface for contact with an object, where an ultrasonic pulse generated by a piezoelectric transducer propagates through the substrate and the contact layer, such that when the object is in contact with the surface of the contact layer, a reflected ultrasonic pulse is produced and propagates through the contact layer and the substrate to be received at the array of piezoelectric transducers, and the CMOS layer receive and process outputs from the piezoelectric transducers produced in response to the received reflected ultrasonic pulses.

    PIEZOELECTRIC AND LOGIC INTEGRATED DELAY LINE MEMORY

    公开(公告)号:US20170169899A1

    公开(公告)日:2017-06-15

    申请号:US15116441

    申请日:2015-02-03

    Abstract: Delay line memory device, systems and methods are disclosed. In one aspect, a delay line memory device includes a substrate; an electronic unit disposed on the substrate and operable to receive, amplify, and/or synchronize data signals into a bit stream to be transmitted as acoustic pulses carrying data stored in the delay line memory device; a first and a second piezoelectric transducer disposed on the substrate and in communication with the electronic unit, in which the first piezoelectric transducer is operable to transmit the data signals to the acoustic pulses that carry the data through the bulk of the substrate, and the second piezoelectric transducer is operable to transduce the received acoustic pulses to intermediate electrical signals containing the data, which are transferred to the electronic unit via an electrical interconnect to cause refresh of the data in the delay line memory device.

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