公开(公告)号：US20230130647A1

公开(公告)日：2023-04-27

申请号：US18146582

申请日：2022-12-27

Applicant: DENSO CORPORATION

Inventor： Tetsuto YAMAGISHI ,  Yoshitsugu SAKAMOTO ,  Ryoichi KAIZU ,  Yuki INABA ,  Hiroki YOSHIKAWA

IPC: H01L23/367 ,  H01L23/00 ,  B23K35/26 ,  C22C13/02

Abstract: A semiconductor device includes a semiconductor chip having first and second main electrodes disposed on opposite surfaces of a silicon carbide substrate, first and second heat dissipation members disposed so as to sandwich the semiconductor chip, and joining members disposed between the first main electrode and the first heat dissipation member and between the second main electrode and the second heat dissipation member. At least one of the joining members is made of a lead-free solder having an alloy composition that contains 3.2 to 3.8 mass % Ag, 0.6 to 0.8 mass % Cu, 0.01 to 0.2 mass % Ni, x mass % Sb, y mass % Bi, 0.001 to 0.3 mass % Co, 0.001 to 0.2 mass % P, and a balance of Sn, where x and y satisfy relational expressions of x+2y≤11 mass %, x+14y≤42 mass %, and x≥5.1 mass %.

公开(公告)号：US20240404981A1

公开(公告)日：2024-12-05

申请号：US18802821

申请日：2024-08-13

Applicant: DENSO CORPORATION

Inventor： Hiroki YOSHIKAWA

IPC: H01L23/00 ,  H01L23/14 ,  H01L23/31 ,  H01L23/498 ,  H01L23/538 ,  H01L25/065

Abstract: In a semiconductor device, a semiconductor element has a first main electrode on a first face, a second main electrode and a signal pad on a second face. A first wiring member is electrically connected to the first main electrode. A second wiring member is electrically connected to the second main electrode. A bonding wire is bonded to the signal pad. At least one of the first wiring member or the second wiring member has an adhesive portion with which a sealing body is in close contact in an opposing face thereof opposing the semiconductor element. The second wiring member has a non-adhesive portion having a lower adhesion to the sealing body than that of the adhesive portion to the sealing body at least in a portion of an opposing face thereof, the portion corresponding to the signal pad in a plate thickness direction of the semiconductor element.