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    UV reactor for transport polymerization
    1.
    发明申请
    UV reactor for transport polymerization 审中-公开
    用于运输聚合的紫外线反应器

    公开(公告)号：US20030188683A1

    公开(公告)日：2003-10-09

    申请号：US10115879

    申请日：2002-04-04

    Applicant: DIELECTRIC SYSTEMS, INC.

    Inventor： Chung J. Lee ,  Oanh Nguyen ,  Atul Kumar

    IPC: C23F001/00 ,  C23C014/00

    CPC classification number: B05D1/60 ,  B01J19/123 ,  B01J2219/0879 ,  B05D3/061

    Abstract: An improved reactor to facilitate new precursor chemistries and transport polymerization processes that are useful for preparations of low null (dielectric constant) films. An improved TP Reactor that consists of UV source and a fractionation device for chemicals is provided to generate useful reactive intermediates from precursors. The reactor is useful for the deposition system.

    Abstract translation: 改进的反应器以促进新的前体化学和运输聚合方法，其可用于制备低ε（介电常数）膜。 提供由UV源和用于化学品的分馏装置组成的改进的TP反应器以从前体产生有用的反应性中间体。 该反应器可用于沉积系统。

    Chemically and electrically stabilized polymer films
    2.
    发明申请
    Chemically and electrically stabilized polymer films 有权
    化学和电化学稳定的聚合物薄膜

    公开(公告)号：US20030195312A1

    公开(公告)日：2003-10-16

    申请号：US10116724

    申请日：2002-04-04

    Applicant: DIELECTRIC SYSTEMS, INC.

    Inventor： Chung J. Lee ,  Atul Kumar

    IPC: C08F114/18

    CPC classification number: B05D1/60 ,  B05D3/0254 ,  B29C71/02 ,  B29C2071/022 ,  B29C2071/025 ,  B29C2071/027 ,  C08G61/02 ,  C08G61/025 ,  C08G2261/3424 ,  C08J5/18 ,  H01L21/0212 ,  H01L21/02271 ,  H01L21/31058 ,  H01L21/3127 ,  Y10T428/269 ,  Y10T428/3154 ,  Y10T428/31544 ,  Y10T428/31855

    Abstract: Preparation methods and stabilization processes for low k polymers that consist of sp2CnullX and HC-sp3CnullnullX bonds. A preparation method is achieved by controlling the substrate temperature and feed rate of the polymer precursors. One stabilization process includes a post annealing of as-deposited polymer films under the presence of hydrogen under high temperatures. The reductive annealing of these films is conducted at temperatures from null20null C. to null50null C. to null20null C. to null50null C. of their Reversible Crystal Transformation (nullCRTnull) temperatures, then quenching the resulting films to null20null C. to null50null C. below their nullCRTnull temperatures. The reductive annealing is conducted before the as-deposited film was removed from a deposition system and still under the vacuum. nullRe-stabilizationnull processes of polymer surfaces that are exposed to reactive plasma etching are also disclosed; thus, further coating by barrier metal, cap layer or etch-stop layer can be safely applied.

    Abstract translation: 由下列组成的低k聚合物的制备方法和稳定化方法：由sp 2> C-X和HC-sp 3> C <下标>α -X键组成。 通过控制聚合物前体的基板温度和进料速率来实现制备方法。 一种稳定化方法包括在氢气存在下在高温下对沉积的聚合物膜进行后退火。 这些膜的还原退火在其可逆晶体转变（“CRT”）温度的-20℃至-50℃至+ 20℃至+ 50℃的温度下进行，然后淬灭所得 在-20℃至-50℃的温度下低于它们的“CRT”温度。 还原退火在沉积膜从沉积系统中移除之前仍然在真空下进行。 还公开了暴露于反应性等离子体蚀刻的聚合物表面的“再稳定化”工艺; 因此，可以安全地施加通过阻挡金属，盖层或蚀刻停止层的进一步涂覆。

    Porous low E (<2.0) thin films by transport co-polymerization
    3.
    发明申请
    Porous low E (<2.0) thin films by transport co-polymerization 失效
    通过运输共聚制成多孔低E（<2.0）薄膜

    公开(公告)号：US20030072947A1

    公开(公告)日：2003-04-17

    申请号：US10207652

    申请日：2002-07-29

    Applicant: DIELECTRIC SYSTEMS, INC.

    Inventor： Chung J. Lee ,  Atul Kumar

    IPC: B05D003/02 ,  B05D003/00 ,  C08F012/20

    CPC classification number: H01L23/5329 ,  B01J19/123 ,  B01J19/1887 ,  B01J2219/00153 ,  B01J2219/00159 ,  B01J2219/0879 ,  B05D1/007 ,  B05D1/60 ,  B05D3/0254 ,  B05D3/061 ,  B05D3/062 ,  B29C71/02 ,  B29C2071/022 ,  B29C2071/025 ,  B29C2071/027 ,  C08G61/02 ,  C08G61/025 ,  C08G2261/3424 ,  C08J5/18 ,  C08J2365/04 ,  C08L65/00 ,  C08L65/04 ,  C23C16/452 ,  F28D17/005 ,  H01L21/0212 ,  H01L21/02203 ,  H01L21/02263 ,  H01L21/312 ,  H01L21/3127 ,  H01L23/53238 ,  H01L2924/0002 ,  Y10T428/31504 ,  Y10T428/3154 ,  Y10T428/31855 ,  H01L2924/00

    Abstract: Methods and products of Transport co-polymerization (nullTCPnull) that are useful for preparations of low Dielectric Constant (nullnullnull) thin films are disclosed. Transport co-polymerization (nullTCPnull) of reactive intermediates that are generated from a first precursor with a general structural formula (Z)mnullArnull(CXnullXnullY)n (VI) with a second reactive intermediate that is generated from a cage compound (e.g. Fullerenes, Methylsilsesquioxane, Hydrosilsesquioxane, and Adamantanyl) or a cyclic-compounds (e.g. Cyclo-Siloxanes and 2,2-Paracyclophanes) results in co-polymer films that are useful for making porous low null (null2.0) thin films. The porous thin films of this invention consist of nano-pores with uniform pore distribution thus retain high rigidity thus are suitable for manufacturing of future ICs using copper as conductor. Preparation methods and stabilization processes for low k co-polymers that consist of sp2CnullZ and HC-sp3CnullnullX bonds are also revealed. A preparation method is achieved by controlling the substrate temperature and feed rate of the major precursors. One stabilization process includes a post annealing of as-deposited co-polymer films under the presence of hydrogen under high temperatures. The reductive annealing of these films is conducted at temperatures from null20null C. to null50null C. to null20null C. to null50null C. of their Reversible Crystal Transformation (nullCRTnull) temperatures, then quenching the resulting films to null20null C. to null50null C. below their nullCRTnull temperatures. The reductive annealing is conducted before the as-deposited film was removed from a deposition system and still under the vacuum. nullRe-stabilizationnull processes of co-polymer surfaces that are exposed to reactive plasma etching are also disclosed; thus, further coating by barrier metal, cap layer or etch-stop layer can be safely applied.

    Abstract translation: 公开了用于制备低介电常数（“epsi”）薄膜的运输共聚（“TCP”）的方法和产品。 由具有一般结构式（Z）m-Ar-（CX'X'Y）n（VI）的第一前体产生的反应性中间体的传输共聚（“TCP”）与第二反应性中间体 由笼状化合物（例如富勒烯，甲基倍半硅氧烷，氢四倍半硅氧烷和金刚烷基）或环状化合物（例如环硅氧烷和2,2-对环磷酰胺）产生的共聚物膜可用于制备多孔低ε（< 2.0）薄膜。 本发明的多孔薄膜由具有均匀孔分布的纳米孔组成，因此保持高刚性，因此适用于使用铜作为导体的未来IC的制造。 还显示了由sp2C-Z和HC-sp3Calpha-X键组成的低k共聚物的制备方法和稳定方法。 通过控制主要前体的基板温度和进料速率来实现制备方法。 一种稳定化方法包括在氢气存在下在高温下对沉积的共聚物膜进行后退火。 这些膜的还原退火在其可逆晶体转变（“CRT”）温度的-20℃至-50℃至+ 20℃至+ 50℃的温度下进行，然后淬灭所得 在-20℃至-50℃的温度下低于它们的“CRT”温度。 还原退火在沉积膜从沉积系统中移除之前仍然在真空下进行。 还公开了暴露于反应性等离子体蚀刻的共聚物表面的“再稳定化”工艺; 因此，可以安全地施加通过阻挡金属，盖层或蚀刻停止层的进一步涂覆。

    Reactive-reactor for generation of gaseous intermediates
    6.
    发明申请
    Reactive-reactor for generation of gaseous intermediates 审中-公开
    用于产生气态中间体的反应堆

    公开(公告)号：US20040055539A1

    公开(公告)日：2004-03-25

    申请号：US10243990

    申请日：2002-09-13

    Applicant: DIELECTRIC SYSTEMS, INC.

    Inventor： Chung J. Lee ,  Atul Kumar ,  Oanh Nguyen ,  Jeff Wu ,  Chieh Chen

    IPC: C23C016/00 ,  H01F041/00

    CPC classification number: B05D1/60

    Abstract: A semiconductor equipment that is useful for the fabrication of integrated circuits (nullICnull). More specifically, this invention relates to a nullreactive-reactornull for a transport polymerization (nullTPnull) process module, wherein the process module is useful for the deposition of low dielectric (nullnullnull) thin films in IC manufacture. The reactive-reactor has reactive metal interior surfaces for effective conversion of precursors to intermediates. The resultant reaction products of the precursor and the interior surface material of the reactive-reactor are very stable, and do not cause metallic contamination of the semiconductors. The reactive-reactor of this invention is also equipped with Reactor Re-generating capacity to restore the reactive metal interior surfaces.

    Abstract translation: 一种用于制造集成电路（“IC”）的半导体设备。 更具体地，本发明涉及用于运输聚合（“TP”）工艺模块的“反应性反应器”，其中该工艺模块可用于在IC制造中沉积低电介质（“ε”）薄膜。 反应器具有反应性金属内表面，用于有效地将前体转化为中间体。 反应堆反应器的前体和内表面材料的反应产物非常稳定，不会引起半导体的金属污染。 本发明的反应性反应器还配备有反应器再生能力以还原反应性金属内表面。

    Multi-stage-heating thermal reactor for transport polymerization
    7.
    发明申请
    Multi-stage-heating thermal reactor for transport polymerization 审中-公开
    用于运输聚合的多级加热热反应器

    公开(公告)号：US20030198578A1

    公开(公告)日：2003-10-23

    申请号：US10125626

    申请日：2002-04-18

    Applicant: DIELECTRIC SYSTEMS, INC.

    Inventor： Chung J. Lee ,  Oanh Nguyen ,  Atul Kumar ,  Jeff Wu ,  Michael Solomensky ,  James Yu Chung Chang ,  Binh Nguyen

    IPC: F28D017/00

    CPC classification number: B05D1/60 ,  B01J19/1887 ,  B01J2219/00153 ,  B01J2219/00159 ,  C23C16/452 ,  F28D17/005

    Abstract: A multi-stage transport polymerization (nullTPnull) reactor useful for making a thin film for the fabrication of integrated circuits. One TP reactor has two distinct heating zones that facilitate the cracking of specific precursor materials. The multi-stage reactor comprises a first low temperature heating zone that heats incoming precursor materials to a temperature that is lower than the nullcrackingnull temperature of the precursor. The second heating zone is maintained at a temperature useful for breaking the chemical bonds of a desired leaving groups in the selected precursor. Specialized heating bodies, which transfer heat to the precursor material in the low and high temperature zones, are used as elements of the invention that can simultaneously decrease the total volume and increase the inside surface area of the TP reactor. Chemistries of precursors used in the multi-stage reactor are also provided.

    Abstract translation: 用于制造用于制造集成电路的薄膜的多级输送聚合（“TP”）反应器。 一个TP反应器具有两个不同的加热区，其有助于特定前体材料的裂化。 多级反应器包括将进入的前体材料加热到低于前体“裂化”温度的温度的第一低温加热区。 第二加热区保持在用于破坏所选择的前体中期望的离去基团的化学键的温度。 用于将热量传递到低温区和高温区中的前体材料的专用加热体用作本发明的元件，其可以同时降低总体积并增加TP反应器的内表面积。 还提供了在多级反应器中使用的前体化学成分。

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