公开(公告)号：US20250118604A1

公开(公告)日：2025-04-10

申请号：US18982346

申请日：2024-12-16

Applicant: EBARA CORPORATION

Inventor： Akira FUKUNAGA ,  Katsuhide WATANABE ,  Itsuki KOBATA ,  Manabu TSUJIMURA

IPC: H01L21/66 ,  B24B37/005 ,  B24B37/015 ,  B24B37/04 ,  H01L21/321

Abstract: To planarize a substrate having irregularities on its surface. Provided is a method of chemical mechanical polishing of a substrate. The method includes the step of polishing the substrate using a processing solution, and the step of changing concentration of an effective component in the processing solution, which contributes to the polishing of the substrate.

公开(公告)号：US20210166967A1

公开(公告)日：2021-06-03

申请号：US16616549

申请日：2018-05-02

Applicant: EBARA CORPORATION

Inventor： Akira FUKUNAGA ,  Katsuhide WATANABE ,  Itsuki KOBATA ,  Manabu TSUJIMURA

IPC: H01L21/768 ,  H01L21/321 ,  H01L21/66 ,  B24B37/04 ,  B24B37/005 ,  B24B37/015

Abstract: To planarize a substrate having irregularities on its surface. Provided is a method of chemical mechanical polishing of a substrate. The method includes the step of polishing the substrate using a processing solution, and the step of changing concentration of an effective component in the processing solution, which contributes to the polishing of the substrate.

公开(公告)号：US20240087963A1

公开(公告)日：2024-03-14

申请号：US18505194

申请日：2023-11-09

Applicant: EBARA CORPORATION

Inventor： Akira FUKUNAGA ,  Katsuhide WATANABE ,  Itsuki KOBATA ,  Manabu TSUJIMURA

IPC: H01L21/66 ,  B24B37/005 ,  B24B37/015 ,  B24B37/04 ,  H01L21/321

CPC classification number: H01L22/12 ,  B24B37/005 ,  B24B37/0056 ,  B24B37/015 ,  B24B37/044 ,  H01L21/3212

Abstract: To planarize a substrate having irregularities on its surface. Provided is a method of chemical mechanical polishing of a substrate. The method includes the step of polishing the substrate using a processing solution, and the step of changing concentration of an effective component in the processing solution, which contributes to the polishing of the substrate.