公开(公告)号：US20250118604A1

公开(公告)日：2025-04-10

申请号：US18982346

申请日：2024-12-16

Applicant: EBARA CORPORATION

Inventor： Akira FUKUNAGA ,  Katsuhide WATANABE ,  Itsuki KOBATA ,  Manabu TSUJIMURA

IPC: H01L21/66 ,  B24B37/005 ,  B24B37/015 ,  B24B37/04 ,  H01L21/321

Abstract: To planarize a substrate having irregularities on its surface. Provided is a method of chemical mechanical polishing of a substrate. The method includes the step of polishing the substrate using a processing solution, and the step of changing concentration of an effective component in the processing solution, which contributes to the polishing of the substrate.

公开(公告)号：US20250058431A1

公开(公告)日：2025-02-20

申请号：US18932791

申请日：2024-10-31

Applicant: EBARA CORPORATION

Inventor： Takuya MORIURA ,  Hiroshi SOTOZAKI ,  Tadakazu SONE ,  Masayoshi ITO ,  Itsuki KOBATA ,  Hisanori MATSUO ,  Tetsuya TERADA

IPC: B24B57/02 ,  B24B37/04

Abstract: There is provided an apparatus for polishing, comprising a table configured to support a polishing pad; a polishing head configured to hold a substrate; and a polishing solution supply device configured to supply a polishing solution between the polishing pad and the substrate. The polishing solution supply device comprises a plurality of polishing solution supply ports arrayed in a direction intersecting with a rotating direction of the polishing pad in a state that the polishing solution supply device is placed on an upstream side in rotation of the polishing pad relative to the substrate. The polishing solution supply device supplies the polishing solution, such that the polishing solution supplied from the plurality of polishing solution supply ports has a predetermined flow rate distribution.

公开(公告)号：US20250046628A1

公开(公告)日：2025-02-06

申请号：US18924089

申请日：2024-10-23

Applicant: EBARA CORPORATION

Inventor： Itsuki KOBATA ,  Yosuke HIMORI

IPC: H01L21/67 ,  H01L21/677

Abstract: A substrate processing method capable of suppressing corrosion of a conductive material on a surface of a substrate by supplying a liquid having a reduced concentration of dissolved oxygen onto the substrate. The substrate processing method includes: dissolving an inert gas in a liquid at not less than a saturation solubility to replace oxygen dissolved in the liquid with the inert gas; generating bubbles of the inert gas in the liquid by depressurizing the liquid in which the inert gas is dissolved; and processing the substrate while supplying the liquid containing the bubbles to the surface of the substrate.

公开(公告)号：US20240033876A1

公开(公告)日：2024-02-01

申请号：US18352325

申请日：2023-07-14

Applicant: EBARA CORPORATION

Inventor： Shumpei MIURA ,  Kenichi SUZUKI ,  Itsuki KOBATA ,  Yasuyuki MOTOSHIMA ,  Ban ITO ,  Seungho YUN

IPC: B24B37/015 ,  B24B37/34

CPC classification number: B24B37/015 ,  B24B37/34

Abstract: A polishing apparatus is disclosed, which is capable of heating and maintaining a temperature distribution of a polishing pad at a predetermined temperature distribution with a simple structure. The polishing apparatus has a pad-temperature regulating apparatus for regulating a temperature of a polishing surface, and the pad-temperature regulating apparatus includes a heating-fluid nozzle arranged above and spaced apart from the polishing surface. The heating-fluid nozzle includes: a nozzle body; a slit formed along a longitudinal direction of the nozzle body for ejecting a heating fluid toward the polishing surface; a header tube which is formed within the nozzle body and into which the heating fluid is supplied; a buffer tube which is formed within the nozzle body and communicates with the slit, and a plurality of branch tubes for coupling the header tube to the buffer tube.

公开(公告)号：US20230352326A1

公开(公告)日：2023-11-02

申请号：US18349666

申请日：2023-07-10

Applicant: EBARA CORPORATION

Inventor： Kuniaki YAMAGUCHI ,  Toshio MIZUNO ,  Itsuki KOBATA ,  Mitsuru MIYAZAKI ,  Naoki TOYOMURA ,  Takuya INOUE

IPC: H01L21/67 ,  B24B37/10 ,  B24B49/14 ,  B24B53/017 ,  B24B37/34 ,  H01L21/304 ,  H01L21/306 ,  H01L21/02

CPC classification number: H01L21/67248 ,  H01L21/67178 ,  H01L21/67109 ,  H01L21/67051 ,  H01L21/67046 ,  H01L21/67028 ,  H01L21/67219 ,  B24B37/105 ,  B24B49/14 ,  B24B53/017 ,  B24B37/345 ,  H01L21/304 ,  H01L21/30625 ,  H01L21/6704 ,  H01L21/02065 ,  H01L21/02052

Abstract: A polishing apparatus is provided. The polishing apparatus includes:



a polishing unit configured to polish a substrate by bringing a polishing tool into contact with the substrate and moving the substrate relatively to the polishing tool; a cleaning unit; and a first transfer robot configured to transfer the substrate before polishing to the polishing unit and/or configured to transfer the substrate after polishing from the polishing unit to the cleaning unit. The cleaning unit includes: at least one cleaning module, a buff processing module configured to perform a buff process to the substrate, and a second transfer robot configured to transfer the substrate between the cleaning module and the buff processing module, the second transfer robot being different from the first robot.

公开(公告)号：US20180169831A1

公开(公告)日：2018-06-21

申请号：US15898028

申请日：2018-02-15

Applicant: EBARA CORPORATION

Inventor： Hiromitsu WATANABE ,  Kuniaki YAMAGUCHI ,  Itsuki KOBATA ,  Yutaka WADA

IPC: B24B57/00 ,  B24B37/04 ,  B24B37/34

CPC classification number: B24B57/00 ,  B24B37/04 ,  B24B37/34

Abstract: A polishing method of polishing a substrate while preventing coarse particles from being discharged onto a polishing pad is disclosed. In this polishing method, a substrate is brought into sliding contact with a polishing pad while a polishing liquid, which has passed through a filter, is supplied onto the polishing pad. The polishing method includes: passing the polishing liquid through the filter while increasing a physical quantity of the polishing liquid until the physical quantity reaches a predetermined set value, the physical quantity being one of flow rate and pressure of the polishing liquid; and polishing the substrate W on the polishing pad while supplying the polishing liquid that has passed through the filter onto the polishing pad.

公开(公告)号：US20170352573A1

公开(公告)日：2017-12-07

申请号：US15615475

申请日：2017-06-06

Applicant: EBARA CORPORATION

Inventor： Zhongxin WEN ,  Toru MARUYAMA ,  Nobuyuki TAKAHASHI ,  Suguru SAKUGAWA ,  Yoichi SHIOKAWA ,  Keita YAGI ,  Itsuki KOBATA ,  Tomohiko TAKEUCHI

IPC: H01L21/687 ,  G03F7/20 ,  B24B41/06 ,  H01L21/683 ,  B24B37/04

CPC classification number: H01L21/68757 ,  B24B37/04 ,  B24B41/068 ,  G03F7/70691 ,  H01L21/67248 ,  H01L21/6838 ,  H01L21/68714

Abstract: It is an object of the present invention to provide a high-flatness substrate holding table. According to a first aspect, a substrate processing apparatus is provided, and such a substrate processing apparatus includes a table for holding a substrate, a resin film attached to a top surface of the table and a heater provided inside the table, and the top surface of the table is formed of ceramics, the top surface of the table includes an opening connectable to a vacuum source, the resin film is formed of polyimide, and a through hole is formed at a position corresponding to the opening of the table when attached to the top surface of the table.

公开(公告)号：US20230405762A1

公开(公告)日：2023-12-21

申请号：US18347464

申请日：2023-07-05

Applicant: EBARA CORPORATION

Inventor： Kuniaki YAMAGUCHI ,  Itsuki KOBATA ,  Toshio MIZUNO ,  Mitsuru MIYAZAKI ,  Naoki TOYOMURA ,  Takuya INOUE

IPC: B24B53/017 ,  B08B3/02 ,  B08B1/04 ,  H01L21/67

CPC classification number: B24B53/017 ,  B08B3/02 ,  B08B1/04 ,  H01L21/67046 ,  H01L21/67051 ,  B08B2203/0288

Abstract: An embodiment of the present invention provides a buff process module. The buff process module includes: a buff table on which a processing target object is mounted; a buff head that holds a buff pad for applying a predetermined process to the processing target object; a buff arm that supports and swings the buff head; a dresser for dressing the buff pad; and a cleaning mechanism that is disposed between the buff table and the dresser and is for cleaning the buff pad.

公开(公告)号：US20200223027A1

公开(公告)日：2020-07-16

申请号：US16715403

申请日：2019-12-16

Applicant: Ebara Corporation

Inventor： Katsuhide WATANABE ,  Itsuki KOBATA

IPC: B24B37/005 ,  H01L21/67 ,  H01L21/02 ,  B24B57/02

Abstract: To quickly grasp a film thickness distribution of a film to be processed on a substrate after CMP and realize high-speed substrate processing, an embodiment of the present invention provides a method for specifying an area to be partially polished by a partial polishing device in a substrate processing apparatus. The substrate processing apparatus includes a substrate polishing device that polishes an entire surface of a film to be processed formed on at least one surface of the substrate. The substrate polishing device includes a film thickness sensor. The substrate processing apparatus further includes the partial polishing device that further partially polishes the film to be processed of the substrate polished by the substrate polishing device. The method includes specifying an area to be partially polished by the partial polishing device based on film thickness distribution data of the film to be processed obtained from the film thickness sensor of the substrate polishing device.

公开(公告)号：US20190143477A1

公开(公告)日：2019-05-16

申请号：US16185773

申请日：2018-11-09

Applicant: EBARA CORPORATION

Inventor： Erina BABA ,  Itsuki KOBATA

IPC: B24B37/04 ,  H01L21/306 ,  H01L21/67 ,  B24B37/32 ,  B24B57/02

Abstract: An even step elimination performance is obtained even when steps of various dimensions exist which are caused due to pattern structures existing in a chip or film forming methods. A planarizing apparatus is provided which is configured to planarize a surface of a substrate, and this planarizing apparatus includes a surface roughening unit configured to roughen a target processing surface of the substrate by use of roughening particles and a CMP unit configured to polish chemically and mechanically (CMP) the roughened target processing surface of the substrate.