公开(公告)号：US20240182498A1

公开(公告)日：2024-06-06

申请号：US18513001

申请日：2023-11-17

Applicant: ENTEGRIS, INC.

Inventor： SeongCheol Kim ,  YeRim Yeon ,  SangJin Lee ,  DaHye Kim ,  MinSeok Ryu ,  KieJin Park

IPC: C07F7/10 ,  C23C16/22 ,  C23C16/455

CPC classification number: C07F7/10 ,  C23C16/22 ,  C23C16/45553

Abstract: A composition comprises a disilylamine precursor. The disilylamine precursor comprises a functional group attached to a nitrogen atom of the dilsilylamine precursor. The functional group comprises an alkyl, an alkenyl, an alkynyl, a cycloalkyl, an aryl, or a benzyl. Related methods are provided, including a method for forming the disilylamine precursor and a method for vapor deposition.

公开(公告)号：US20220359192A1

公开(公告)日：2022-11-10

申请号：US17726079

申请日：2022-04-21

Applicant: ENTEGRIS, INC.

Inventor： Sungsil Cho ,  DaHye Kim ,  HwanSoo Kim ,  SooJin Lee ,  Bryan C. Hendrix

IPC: H01L21/02 ,  C23C16/40 ,  C23C16/455

Abstract: Provided are certain silicon precursor compounds which are useful in the formation of silicon-containing films in the manufacture of semiconductor devices, and more specifically to compositions and methods for forming such silicon-containing films, such as films comprising silicon dioxide.

公开(公告)号：US12264392B2

公开(公告)日：2025-04-01

申请号：US17356252

申请日：2021-06-23

Applicant: ENTEGRIS, INC.

Inventor： Sungsil Cho ,  DaHye Kim ,  SooJin Lee ,  Jae Eon Park ,  Bryan C. Hendrix ,  Philip S. H. Chen ,  Shawn D. Nguyen

IPC: C23C16/00 ,  C23C16/34 ,  C23C16/36 ,  C23C16/455 ,  C23C16/52

Abstract: Provided are certain silicon precursor compounds which are useful in the formation of silicon-containing films in the manufacture of semiconductor devices, and more specifically to compositions and methods for forming such silicon-containing films, such as films comprising silicon dioxide or silicon nitride.

公开(公告)号：US12071688B2

公开(公告)日：2024-08-27

申请号：US17214701

申请日：2021-03-26

Applicant: ENTEGRIS, INC.

Inventor： SangJin Lee ,  DaHye Kim ,  Sungsil Cho ,  Seobong Chang ,  Jae Eon Park ,  Bryan C. Hendrix ,  Thomas H. Baum ,  SooJin Lee

IPC: C23C16/455 ,  C07F7/02 ,  C07F7/10 ,  C23C16/34 ,  C23C16/40 ,  C23C16/50 ,  H01L21/02

CPC classification number: C23C16/45553 ,  C07F7/025 ,  C07F7/10 ,  C23C16/345 ,  C23C16/402 ,  C23C16/45536 ,  C23C16/50 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02164 ,  H01L21/0217

Abstract: Provided are certain liquid silicon precursors useful for the deposition of silicon-containing films, such as films comprising silicon, silicon nitride, silicon oxynitride, silicon dioxide, silicon carbide, carbon-doped silicon nitride, or carbon-doped silicon oxynitride. Also provided are methods for forming such films utilizing vapor deposition techniques.

公开(公告)号：US20240247010A1

公开(公告)日：2024-07-25

申请号：US18412997

申请日：2024-01-15

Applicant: ENTEGRIS, INC.

Inventor： DaHye Kim ,  YeRim Yeon ,  SangJin Lee ,  MinSeok Ryu ,  SeongCheol Kim

IPC: C07F7/21

CPC classification number: C07F7/21

Abstract: Precursors and related methods are provided. A precursor comprises a cyclosilazane compound. The cyclosilazane compound is a reaction product of an aminosilane and a halosilane. A method for forming the precursor comprises obtaining an aminosilane, obtaining a halosilane, and contacting the aminosilane and the halosilane to obtain the precursor. A method for forming a silicon-containing film using the precursor is also provided, among other embodiments.