Method for nucleation of conductive nitride films

    公开(公告)号:US11965239B2

    公开(公告)日:2024-04-23

    申请号:US17161332

    申请日:2021-01-28

    Applicant: ENTEGRIS, INC.

    CPC classification number: C23C16/34 C23C16/45534 C23C16/45553

    Abstract: Provided is improved methodology for the nucleation of certain metal nitride substrate surfaces utilizing certain silicon-containing halides, silicon-containing amides, and certain metal precursors, in conjunction with nitrogen-containing reducing gases. While utilizing a pretreatment step, the methodology shows greatly improved nucleation wherein a microelectronic device substrate having such a metal nitride film deposited thereon has a thickness of about 10 Å to about 15 Å and less than about 1% of void area. Once such nucleation has been achieved, traditional layer-upon-layer deposition can rapidly take place.

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