公开(公告)号：US11761081B2

公开(公告)日：2023-09-19

申请号：US16577860

申请日：2019-09-20

Applicant: ENTEGRIS, INC.

Inventor： Robert Wright, Jr. ,  Thomas H. Baum ,  Bryan C. Hendrix ,  Shawn D. Nguyen ,  Han Wang ,  Philip S. H. Chen

IPC: C23C16/455 ,  C23C16/18 ,  H01L21/02 ,  C23C16/56

CPC classification number: C23C16/45534 ,  C23C16/18 ,  C23C16/56 ,  H01L21/0228

Abstract: Described are vapor deposition methods for depositing metal films or layers onto a substrate, wherein the metal is molybdenum or tungsten; the methods involve organometallic precursor compounds that contain the metal and one or more carbon-containing ligands, and include depositing a metal layer formed from the metal of the precursor, onto a substrate, followed by introducing oxidizer to the formed metal layer.

公开(公告)号：US20220316055A1

公开(公告)日：2022-10-06

申请号：US17708999

申请日：2022-03-30

Applicant: ENTEGRIS, INC.

Inventor： Han Wang ,  Bryan C. Hendrix

IPC: C23C16/34 ,  C23C16/455

Abstract: The invention provides a process for the deposition of titanium silicon nitride (TiSiN) films onto a substrate, such as a substrate surface on a microelectronic device. Surprisingly, the process can be run at relatively low temperatures for the silicon precursors described herein.

公开(公告)号：US20240035157A1

公开(公告)日：2024-02-01

申请号：US18229077

申请日：2023-08-01

Applicant: ENTEGRIS, INC.

Inventor： Robert Wright, JR. ,  Thomas H. Baum ,  Bryan C. Hendrix ,  Shawn D. Nguyen ,  Han Wang ,  Philip S. H. Chen

IPC: C23C16/455 ,  H01L21/02 ,  C23C16/56 ,  C23C16/18

CPC classification number: C23C16/45534 ,  H01L21/0228 ,  C23C16/56 ,  C23C16/18

Abstract: Described are vapor deposition methods for depositing metal films or layers onto a substrate, wherein the metal is molybdenum or tungsten; the methods involve organometallic precursor compounds that contain the metal and one or more carbon-containing ligands, and include depositing a metal layer formed from the metal of the precursor, onto a substrate, followed by introducing oxidizer to the formed metal layer.

公开(公告)号：US20230187202A1

公开(公告)日：2023-06-15

申请号：US18079318

申请日：2022-12-12

Applicant: ENTEGRIS, INC.

Inventor： Han Wang ,  Bryan Clark Hendrix ,  Eric Condo

IPC: H01L21/02 ,  C23C16/34 ,  C23C16/50 ,  C23C16/455

CPC classification number: H01L21/02208 ,  H01L21/0217 ,  H01L21/0228 ,  H01L21/02274 ,  H01L21/02315 ,  C23C16/345 ,  C23C16/50 ,  C23C16/4554

Abstract: The use of selective deposition of silicon nitride can eliminate conventional patterning steps by allowing silicon nitride to be deposited only in selected and desired areas. Using a silicon iodide precursor alternately with a thermal nitrogen source in an ALD or pulsed CVD mode, silicon nitride can be deposited preferentially on a surface such as silicon nitride, silicon dioxide, germanium oxide, SiCO, SiOF, silicon carbide, silicon oxynitride, and low k substrates, while exhibiting very little deposition on exposed surfaces such as titanium nitride, tantalum nitride, aluminum nitride, hafnium oxide, zirconium oxide, aluminum oxide, titanium oxide, tantalum oxide, niobium oxide, lanthanum oxide, yttrium oxide, magnesium oxide, calcium oxide, and strontium oxide.

公开(公告)号：US11380539B2

公开(公告)日：2022-07-05

申请号：US16789106

申请日：2020-02-12

Applicant: ENTEGRIS, INC.

Inventor： Han Wang ,  Bryan C. Hendrix ,  Eric Condo ,  Thomas H. Baum

IPC: H01L21/31 ,  H01L21/02 ,  C23C16/34 ,  C23C16/04 ,  C23C16/455

Abstract: Certain embodiments of the invention utilize low temperature atomic layer deposition methodology to form material containing silicon and nitrogen (e.g., silicon nitride). The atomic layer deposition uses silicon tetraiodide (SiI4) or disilicon hexaiodide (Si2I6) as one precursor and uses a nitrogen-containing material such as ammonia as another precursor. In circumstances where a selective deposition of silicon nitride is desired to be deposited over silicon dioxide, the substrate surface is first treated with ammonia plasma.

公开(公告)号：US12252787B2

公开(公告)日：2025-03-18

申请号：US18229077

申请日：2023-08-01

Applicant: ENTEGRIS, INC.

Inventor： Robert Wright, Jr. ,  Thomas H. Baum ,  Bryan C. Hendrix ,  Shawn D. Nguyen ,  Han Wang ,  Philip S. H. Chen

IPC: C23C16/455 ,  C23C16/18 ,  C23C16/56 ,  H01L21/02

Abstract: Described are vapor deposition methods for depositing metal films or layers onto a substrate, wherein the metal is molybdenum or tungsten; the methods involve organometallic precursor compounds that contain the metal and one or more carbon-containing ligands, and include depositing a metal layer formed from the metal of the precursor, onto a substrate, followed by introducing oxidizer to the formed metal layer.

公开(公告)号：US11965239B2

公开(公告)日：2024-04-23

申请号：US17161332

申请日：2021-01-28

Applicant: ENTEGRIS, INC.

Inventor： Gavin Richards ,  Thomas H. Baum ,  Han Wang ,  Bryan C. Hendrix

IPC: C23C16/34 ,  C23C16/455

CPC classification number: C23C16/34 ,  C23C16/45534 ,  C23C16/45553

Abstract: Provided is improved methodology for the nucleation of certain metal nitride substrate surfaces utilizing certain silicon-containing halides, silicon-containing amides, and certain metal precursors, in conjunction with nitrogen-containing reducing gases. While utilizing a pretreatment step, the methodology shows greatly improved nucleation wherein a microelectronic device substrate having such a metal nitride film deposited thereon has a thickness of about 10 Å to about 15 Å and less than about 1% of void area. Once such nucleation has been achieved, traditional layer-upon-layer deposition can rapidly take place.