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公开(公告)号：US20150333241A1
公开(公告)日：2015-11-19
申请号：US14716262
申请日：2015-05-19
Applicant: EPISTAR CORPORATION
Inventor： Chao Hsing CHEN , Jia Kuen WANG , Chien Fu SHEN , Chun Teng KO
CPC classification number: H01L27/156 , H01L25/0753 , H01L33/483 , H01L33/50 , H01L33/60 , H01L33/62 , H01L33/64 , H01L33/644 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2924/00014 , H01L2924/00
Abstract: An optoelectronic device including a substrate having a first site, a second side opposite to the first side, and an outer boundary; a light emitting unit formed on the first side; a first electrode electrically connected to the light emitting unit; a second electrode electrically connected to the light emitting unit; and a heat dissipation pad formed between the first electrode and the second electrode and electrically insulated from the light emitting unit.
Abstract translation: 一种光电子器件，包括具有第一部位的衬底，与第一侧相对的第二侧和外部边界; 形成在第一侧上的发光单元; 电连接到所述发光单元的第一电极; 电连接到所述发光单元的第二电极; 以及形成在所述第一电极和所述第二电极之间并与所述发光单元电绝缘的散热垫。
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公开(公告)号：US20220262849A1
公开(公告)日：2022-08-18
申请号：US17733262
申请日：2022-04-29
Applicant: EPISTAR CORPORATION
Inventor： Chao Hsing CHEN , Jia Kuen WANG , Chien Fu SHEN , Chun Teng KO
Abstract: An optoelectronic device comprises an epitaxial stack, comprising a first semiconductor layer, an active layer, and a second semiconductor layer; a trench exposing a portion of the first semiconductor layer; a first insulating layer formed on a side wall of the trench to electrically insulate from the active layer and the second semiconductor layer; a first electrode formed on the trench; a second electrode formed on the second semiconductor layer; a supporting device covering the epitaxial stack; an optical layer covering the first electrode and the second electrode, comprising a plurality of openings corresponding to positions of the first electrodes and the second electrodes; a fifth electrode electrically connected with the first electrode; and a sixth electrode electrically connected with the second electrode, wherein the fifth electrode and the sixth electrode each comprises a side comprising a length longer that of an edge of the epitaxial stack.
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公开(公告)号：US20160278174A1
公开(公告)日：2016-09-22
申请号：US15171748
申请日：2016-06-02
Applicant: EPISTAR CORPORATION
Inventor： Chao Hsing CHEN , Alexander Chang WANG , Chia-Ling HSU
IPC: H05B33/08
CPC classification number: H05B33/0821 , H01L24/04 , H01L24/48 , H01L25/0753 , H01L27/15 , H01L33/0066 , H01L33/0079 , H01L33/62 , H01L2224/04042 , H01L2224/48139 , H01L2224/48157 , H01L2224/48465 , H01L2224/4848 , H01L2924/00014 , H01L2224/45099
Abstract: A light-emitting device includes an insulating carrier; a light-emitting array formed on the insulating carrier including a first light-emitting circuit having a first light-emitting unit, wherein the first light-emitting circuit is a one-way circuit, a second light-emitting circuit having a second light-emitting unit, wherein the second light-emitting circuit is a one-way circuit, a first conductive layer, a second conductive layer, and a third conductive layer, wherein the first light-emitting circuit is formed between the first conductive layer and the second conductive layer and connects with them electrically, the second light-emitting circuit is formed between the second conductive layer and the third conductive layer and connects with them electrically, wherein an area of the second conductive layer is greater or equal to 1.9×103 μm2.
Abstract translation: 发光装置包括绝缘载体; 形成在绝缘载体上的发光阵列，包括具有第一发光单元的第一发光电路，其中所述第一发光电路是单向电路，第二发光电路具有第二发光单元， 发光单元，其中第二发光电路是单向电路，第一导电层，第二导电层和第三导电层，其中第一发光电路形成在第一导电层和第二导电层之间 导电层并与它们电连接，第二发光电路形成在第二导电层和第三导电层之间并与它们电连接，其中第二导电层的面积大于或等于1.9×10 3μm2。
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公开(公告)号：US20170338278A1
公开(公告)日：2017-11-23
申请号：US15670620
申请日：2017-08-07
Applicant: EPISTAR CORPORATION
Inventor： Chao Hsing CHEN , Jia Kuen WANG , Chien Fu SHEN , Chun Teng KO
CPC classification number: H01L27/156 , H01L25/0753 , H01L33/483 , H01L33/50 , H01L33/60 , H01L33/62 , H01L33/64 , H01L33/644 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2924/00014 , H01L2924/00
Abstract: An optoelectronic device includes a first optoelectronic unit; a second optoelectronic unit; a third optoelectronic unit formed between the first optoelectronic unit and the second optoelectronic unit; a first electrode formed on and electrically connected to the first optoelectronic unit; a second electrode formed on and electrically connected to the second optoelectronic unit; a first pad electrically insulated from the third optoelectronic unit wherein the first pad is formed on the third optoelectronic unit or disposed between the first electrode and the second electrode; and a plurality of conductor arrangement structures electrically connected to the first optoelectronic unit, the second optoelectronic unit, and the third optoelectronic unit.
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Patent Agency Ranking
公开(公告)号：US20170069682A1
公开(公告)日：2017-03-09
申请号：US15330883
申请日：2016-11-07
Applicant: EPISTAR CORPORATION
Inventor： Chao Hsing CHEN , Jia Kuen WANG , Chien Fu SHEN , Chun Teng KO
CPC classification number: H01L27/156 , H01L25/0753 , H01L33/483 , H01L33/50 , H01L33/60 , H01L33/62 , H01L33/64 , H01L33/644 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2924/00014 , H01L2924/00
Abstract: An optoelectronic device includes a substrate having a first side, a second side opposite to the first side; a first optoelectronic unit formed on the first side of the substrate; a second optoelectronic unit formed on the first side of the substrate; a third optoelectronic unit formed on the first side of the substrate; a first electrode formed on and electrically connected to the first optoelectronic unit; a second electrode formed on and electrically connected to the second optoelectronic unit; a first pad formed on the first side of the substrate and electrically insulated from the third optoelectronic unit; and a plurality of conductor arrangement structures electrically connected to the first optoelectronic unit, the second optoelectronic unit, and the third optoelectronic unit.
Abstract translation: 光电子器件包括具有第一侧，与第一侧相对的第二侧的衬底; 形成在所述基板的第一侧上的第一光电单元; 形成在所述基板的第一侧上的第二光电单元; 形成在所述基板的第一侧上的第三光电单元; 形成在第一光电子单元上并与之电连接的第一电极; 形成在第二光电单元上并与之电连接的第二电极; 第一焊盘，形成在所述衬底的所述第一侧上，并与所述第三光电单元电绝缘; 以及电连接到第一光电单元，第二光电单元和第三光电单元的多个导体布置结构。
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公开(公告)号：US20180331154A1
公开(公告)日：2018-11-15
申请号：US16031737
申请日：2018-07-10
Applicant: EPISTAR CORPORATION
Inventor： Chao Hsing CHEN , Jia Kuen WANG , Chien Fu SHEN , Chun Teng KO
CPC classification number: H01L27/156 , H01L25/0753 , H01L33/483 , H01L33/50 , H01L33/60 , H01L33/62 , H01L33/64 , H01L33/644 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2924/00014 , H01L2924/00
Abstract: An optoelectronic device comprises a substrate; a first optoelectronic unit formed on the substrate; a second optoelectronic unit formed on the substrate; a plurality of third optoelectronic units formed on the substrate, electrically connected to the first optoelectronic unit and the second optoelectronic unit; a plurality of first electrodes respectively formed on the first optoelectronic unit, the second optoelectronic unit and the plurality of third optoelectronic units; a plurality of second electrodes respectively formed on the first optoelectronic unit, the second optoelectronic unit and the plurality of third optoelectronic units; an optical layer surrounding the first optoelectronic unit, the second optoelectronic unit and the plurality of third optoelectronic units in a top view of the optoelectronic device; a third electrode formed on the first optoelectronic unit and one of the plurality of third optoelectronic units; and a fourth electrode formed on the second optoelectronic unit and another one of the plurality of third optoelectronic units.
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公开(公告)号：US20160027745A1
公开(公告)日：2016-01-28
申请号：US14874063
申请日：2015-10-02
Applicant: EPISTAR CORPORATION
Inventor： Chao Hsing CHEN , Chien Fu SHEN , Tsun Kai KO , Schang Jing HON , Hsin Mao LIU
IPC: H01L23/60 , H01L25/075 , H01L33/62 , H01L27/15
CPC classification number: H01L23/60 , H01L25/0753 , H01L27/153 , H01L27/156 , H01L33/62 , H01L2924/0002 , H05B33/089 , Y02B20/341 , H01L2924/00
Abstract: The present disclosure provides a light emitting device including a serially-connected LED array comprising a plurality of LED cells on a substrate. The serially-connected LED array includes a first LED cell, a second LED cell, and a serially-connected LED sub-array comprising at least three LED cells intervening between the first and second LED cell; and a plurality of conducting metals formed on the LED cells to electrically connect the plurality of LED cell in series; wherein among the LED sub-array which are continuously and sequentially connected by the conducting metals, each LED cell connects to a previous LED cell by a first connecting direction and connects to a next LED cell by a second connecting direction, the first connecting direction is not parallel to the second connecting direction.
Abstract translation: 本公开提供了一种包括串联连接的LED阵列的发光器件，其包括在衬底上的多个LED电池。 串联LED阵列包括第一LED电池，第二LED电池和串联连接的LED子阵列，其包括介于第一和第二LED电池之间的至少三个LED电池; 以及形成在所述LED单元上的多个导电金属，以串联地连接所述多个LED电池; 其中，在由所述导电金属连续地依次连接的所述LED子阵列之中，每个LED单元通过第一连接方向连接到先前的LED单元，并且通过第二连接方向连接到下一个LED单元，所述第一连接方向为 不平行于第二连接方向。
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公开(公告)号：US20210020690A1
公开(公告)日：2021-01-21
申请号：US17064769
申请日：2020-10-07
Applicant: EPISTAR CORPORATION
Inventor： Chao Hsing CHEN , Jia Kuen WANG , Chien Fu SHEN , Chun Teng KO
Abstract: An optoelectronic device comprises a substrate; a first and a second optoelectronic units formed on the substrate; a plurality of third optoelectronic units formed on the substrate, electrically connected to the first optoelectronic unit and the second optoelectronic unit; a plurality of first electrodes respectively formed on the first optoelectronic unit, the second optoelectronic unit and the plurality of third optoelectronic units; a plurality of second electrodes respectively formed on the first optoelectronic unit, the second optoelectronic unit and the plurality of third optoelectronic units; an optical layer surrounding the first optoelectronic unit, the second optoelectronic unit and the plurality of third optoelectronic units in a top view of the optoelectronic device; a third electrode formed on the first optoelectronic unit and one of the plurality of third optoelectronic units; and a fourth electrode formed on the second optoelectronic unit and another one of the plurality of third optoelectronic units.
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公开(公告)号：US20200119086A1
公开(公告)日：2020-04-16
申请号：US16692790
申请日：2019-11-22
Applicant: EPISTAR CORPORATION
Inventor： Chao Hsing CHEN , Jia Kuen WANG , Chien Fu SHEN , Chun Teng KO
Abstract: An optoelectronic device comprises a substrate; a first optoelectronic unit formed on the substrate; a second optoelectronic unit formed on the substrate; a plurality of third optoelectronic units formed on the substrate, electrically connected to the first optoelectronic unit and the second optoelectronic unit; a plurality of first electrodes respectively formed on the first optoelectronic unit, the second optoelectronic unit and the plurality of third optoelectronic units; a plurality of second electrodes respectively formed on the first optoelectronic unit, the second optoelectronic unit and the plurality of third optoelectronic units; an optical layer surrounding the first optoelectronic unit, the second optoelectronic unit and the plurality of third optoelectronic units in a top view of the optoelectronic device; a third electrode formed on the first optoelectronic unit and one of the plurality of third optoelectronic units; and a fourth electrode formed on the second optoelectronic unit and another one of the plurality of third optoelectronic units.
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