公开(公告)号：US20200066937A1

公开(公告)日：2020-02-27

申请号：US16670726

申请日：2019-10-31

Applicant: EPISTAR CORPORATION

Inventor： Chien-Hua CHOU ,  Tai-Chun WANG ,  Chih-Tsung SU ,  Biau-Dar CHEN

IPC: H01L33/38 ,  H01L33/14

Abstract: A light-emitting device comprises a semiconductor layer; a pad electrode comprising a periphery disposed on the semiconductor layer; a finger electrode connected to the pad electrode, wherein the finger electrode comprises a first portion extended from the periphery of the pad electrode and a second portion connected to the first portion; and a plurality of first current blocking regions formed on the semiconductor layer, separated from the pad electrode and formed under the finger electrode, wherein one of the plurality of first current blocking regions is most close to the pad electrode and is separated from the pad electrode by a first distance, adjacent two of others of the plurality of first current blocking regions are separated from each other by a second distance, and the first distance is longer than the second distance.

公开(公告)号：US20190148595A1

公开(公告)日：2019-05-16

申请号：US16231827

申请日：2018-12-24

Applicant: EPISTAR CORPORATION

Inventor： Chien-Hua CHOU ,  Tai-Chun WANG ,  Chih-Tsung SU ,  Biau-Dar CHEN

IPC: H01L33/38 ,  H01L33/14

Abstract: A light-emitting device comprises a semiconductor stack; a pad electrode comprising a periphery disposed on the semiconductor stack; and a finger electrode connected to the pad electrode, wherein the finger electrode comprises a first portion extended from the periphery of the pad electrode and a second portion away from the pad electrode, the first portion comprises a first side and a second side, the first side is opposite to the second side, the first side comprises a first arc having a first curvature radius, and the first curvature radius is larger than 10 μm.

公开(公告)号：US20220376136A1

公开(公告)日：2022-11-24

申请号：US17879526

申请日：2022-08-02

Applicant: EPISTAR CORPORATION

Inventor： Chien-Hua CHOU ,  Tai-Chun WANG ,  Chih-Tsung SU ,  Biau-Dar CHEN

IPC: H01L33/38 ,  H01L33/14

Abstract: A light-emitting device comprises a semiconductor stack; a pad electrode comprising a periphery disposed on the semiconductor stack; and a finger electrode connected to the pad electrode, wherein the finger electrode comprises a first portion extended from the periphery of the pad electrode and a second portion away from the pad electrode, the first portion comprises a first side and a second side, the first side is opposite to the second side, the first side comprises a first arc having a first curvature radius, and the first curvature radius is larger than 10 μm.

公开(公告)号：US20210074886A1

公开(公告)日：2021-03-11

申请号：US17087310

申请日：2020-11-02

Applicant: EPISTAR CORPORATION

Inventor： Chien-Hua CHOU ,  Tai-Chun WANG ,  Chih-Tsung SU ,  Biau-Dar CHEN

IPC: H01L33/38 ,  H01L33/14

Abstract: A light-emitting device comprises a semiconductor layer; a pad electrode comprising a periphery disposed on the semiconductor layer; a finger electrode connected to the pad electrode, wherein the finger electrode comprises a first portion extended from the periphery of the pad electrode and a second portion connected to the first portion; and a plurality of first current blocking regions formed on the semiconductor layer, separated from the pad electrode and formed under the finger electrode, wherein one of the plurality of first current blocking regions is most close to the pad electrode and is separated from the pad electrode by a first distance, adjacent two of others of the plurality of first current blocking regions are separated from each other by a second distance, and the first distance is longer than the second distance.

公开(公告)号：US20170179343A1

公开(公告)日：2017-06-22

申请号：US15332711

申请日：2016-10-24

Applicant: EPISTAR CORPORATION

Inventor： Chien-Hua CHOU ,  Tai-Chun WANG ,  Chih-Tsung SU ,  Biau-Dar CHEN

IPC: H01L33/38 ,  H01L33/14

CPC classification number: H01L33/38 ,  H01L33/145

Abstract: A light-emitting device comprises a semiconductor stack; a pad electrode comprising a periphery disposed on the semiconductor stack; and a finger electrode connected to the pad electrode, wherein the finger electrode comprises a first portion extended from the periphery of the pad electrode and a second portion away from the pad electrode, the first portion comprises a first side and a second side, the first side is opposite to the second side, the first side comprises a first arc having a first curvature radius, and the first curvature radius is larger than 10 μm.