公开(公告)号：US20230317912A1

公开(公告)日：2023-10-05

申请号：US18330562

申请日：2023-06-07

Applicant: EPISTAR CORPORATION

Inventor： Jhih Yong YANG ,  Hsin Ying WANG ,  De Shan KUO

IPC: H01L33/62 ,  H01L33/20

CPC classification number: H01L33/62 ,  H01L33/20 ,  H01L2933/0066

Abstract: A light-emitting diode, includes a semiconductor stack, including a first semiconductor layer, an active region and a second semiconductor layer; a transparent conductive layer formed on the semiconductor stack and electrically connected to the second semiconductor layer; an insulating layer formed on the transparent conductive layer, comprising a plurality of first opening; a first electrode formed on the insulating layer, electrically connected to the first semiconductor layer; and a second electrode formed on the insulating layer, comprising a second pad and a second extension extending from the second pad along a long side of the light-emitting diode toward the first electrode, electrically connected to the transparent conductive layer, wherein the second extension comprise a plurality of node parts and a plurality of linking parts alternately disposed, and in a plan view, the node part has a width smaller than that of the second pad and lager than that of the linking part and that of the first opening; wherein the second extension does not overlap the first electrode; and wherein the plurality of node parts contacts the transparent conductive layer through the plurality of the first openings.

公开(公告)号：US20240297207A1

公开(公告)日：2024-09-05

申请号：US18660125

申请日：2024-05-09

Applicant: EPISTAR CORPORATION

Inventor： Hsin Ying WANG ,  Tzung Shiun YEH ,  Yu Ling LIN ,  Bo Jiun HU

IPC: H01L27/15 ,  H01L33/38 ,  H01L33/44

CPC classification number: H01L27/156 ,  H01L33/44 ,  H01L33/38

Abstract: A light-emitting device, includes a substrate; a semiconductor stack formed on the substrate; a first current blocking patterned structure and a second current blocking patterned structure formed on the semiconductor stack and separated from each other; and a plurality of electrodes formed on the semiconductor stack and electrically connected to the semiconductor stack; wherein the first current blocking patterned structure is overlapped with one of the plurality of electrodes and the second current blocking patterned structure is not overlapped with the plurality of electrodes.

公开(公告)号：US20210036049A1

公开(公告)日：2021-02-04

申请号：US16942858

申请日：2020-07-30

Applicant: EPISTAR CORPORATION

Inventor： Hsin Ying WANG ,  Tzung Shiun YEH ,  Yu Ling LIN ,  Bo Jiun HU

IPC: H01L27/15 ,  H01L33/44

Abstract: A light-emitting diode, includes a substrate; a semiconductor stack formed on the substrate; a first current blocking patterned structure and a second current blocking patterned structure formed on the semiconductor stack and separated from each other; and a plurality of electrodes formed on the semiconductor stack and electrically connected to the semiconductor stack; wherein the first current blocking patterned structure is overlapped with one of the plurality of electrodes and the second current blocking patterned structure is not overlapped with the plurality of electrodes.