公开(公告)号：US20180128761A1

公开(公告)日：2018-05-10

申请号：US15804455

申请日：2017-11-06

Applicant: EPISTAR CORPORATION

Inventor： Kunal KASHYAP ,  Kun-Wei KAO ,  Yih-Hua RENN ,  Meng-Lun TSAI ,  Zong-Xi CHEN ,  Hsin-Mao LIU ,  Jui-Hung YEH ,  Hung-Chi WANG

IPC: G01N27/02 ,  H01L29/778 ,  H01L29/20 ,  H01L29/205 ,  H01L23/34

CPC classification number: G01N27/414 ,  G01N27/02 ,  G01N27/4141 ,  H01L23/3171 ,  H01L23/345 ,  H01L29/1029 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/7786 ,  H01L29/7787

Abstract: A sensing device includes a first III-V compound stack and a second III-V compound stack. The first III-V compound stack has a first sensing area, and the second III-V compound stack has a second sensing area. A passivation layer fully covers the second sensing area. The first III-V compound stack is physically separated from the second III-V compound stack, and has material compositions and structures same as the second III-V compound stack.

公开(公告)号：US20180128774A1

公开(公告)日：2018-05-10

申请号：US15664947

申请日：2017-07-31

Applicant: EPISTAR CORPORATION

Inventor： Kunal KASHYAP ,  Kun-Wei KAO ,  Meng-Lun TSAI

IPC: G01N27/414

CPC classification number: G01N27/414 ,  G01N27/02 ,  G01N27/4141 ,  H01L23/3171 ,  H01L23/345 ,  H01L29/1029 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/7786 ,  H01L29/7787

Abstract: A sensing device includes a semiconductor structure, a substrate, a first electrode and a second electrode, and a heater. A sensing area arranged on the top side of the semiconductor structure. The substrate is located under the bottom side of the semiconductor. The first electrode and the second electrode are arranged on the top side of the semiconductor structure. The heater is disposed on the semiconductor structure and separated from the sensing area by a distance less than 100 μm.

公开(公告)号：US20230013841A1

公开(公告)日：2023-01-19

申请号：US17377784

申请日：2021-07-16

Applicant: EPISTAR CORPORATION ,  Yenrich Technology Corporation

Inventor： Min-Hsun HSIEH ,  Kunal KASHYAP

IPC: H01L33/54 ,  H01L33/50 ,  H01L33/00

Abstract: A light-emitting device includes a semiconductor stack, a first electrode, a second electrode, and a supporting layer. The semiconductor stack includes a first semiconductor layer including a first top surface and a bottom surface, an active layer located on the first semiconductor layer, and a second semiconductor layer located on the active layer and including a second top surface. The first electrode is located on the first top surface. The second electrode is located on the second top surface. The supporting layer includes a first thickness, and directly covers at least 80% of the bottom surface. In a top view, the semiconductor stack includes a maximum length, and a ratio of the maximum length to the first thickness is smaller than 1. The supporting layer has a first thermal expansion coefficient smaller than 80 ppm/° C., and the supporting layer has a Young's modulus between 2˜10 GPa.