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    LIGHT-EMITTING ELEMENT
    1.
    发明申请
    LIGHT-EMITTING ELEMENT 有权
    发光元件

    公开(公告)号：US20140159091A1

    公开(公告)日：2014-06-12

    申请号：US14098911

    申请日：2013-12-06

    Applicant: EPISTAR CORPORATION

    Inventor： Schang-Jing HON ,  Chao-Hsing CHEN ,  Tsun-Kai KO ,  Chien-Fu SHEN ,  Jia-Kuen WANG ,  Hung-Che CHEN

    IPC: H01L33/62

    CPC classification number: H01L33/387 ,  H01L33/20 ,  H01L33/24 ,  H01L33/38 ,  H01L33/44 ,  H01L33/46 ,  H01L33/54 ,  H01L33/62 ,  H01L2224/73265

    Abstract: A light-emitting element comprises: a light-emitting semiconductor stack comprising a first semiconductor layer; a second semiconductor layer on the first semiconductor layer; and a light-emitting layer between the first semiconductor layer and the second semiconductor layer; a first electrode on the first semiconductor layer; a first protection layer on the light-emitting semiconductor stack and comprising a first through hole; and a conductive contact layer on the first protection layer and electrically connected to the first electrode through the first through hole.

    Abstract translation: 发光元件包括：包含第一半导体层的发光半导体堆叠; 在所述第一半导体层上的第二半导体层; 以及在所述第一半导体层和所述第二半导体层之间的发光层; 在所述第一半导体层上的第一电极; 在所述发光半导体堆叠上的第一保护层，并且包括第一通孔; 以及在所述第一保护层上的导电接触层，并且通过所述第一通孔电连接到所述第一电极。

    HIGH EFFICIENCY LIGHT-EMITTING DIODE AND METHOD FOR MANUFACTURING THE SAME
    2.
    发明申请
    HIGH EFFICIENCY LIGHT-EMITTING DIODE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
    高效发光二极管及其制造方法

    公开(公告)号：US20140027786A1

    公开(公告)日：2014-01-30

    申请号：US14038286

    申请日：2013-09-26

    Applicant: EPISTAR CORPORATION

    Inventor： Schang-Jing HON

    IPC: H01L33/60

    CPC classification number: H01L33/60 ,  H01L33/0079 ,  H01L33/14 ,  H01L33/30 ,  H01L33/405 ,  H01L33/42

    Abstract: A high efficiency light-emitting diode and a method for manufacturing the same are described. The high efficiency light-emitting diode comprises: a permanent substrate; a first contact metal layer and a second contact metal layer respectively deposed on two opposite surfaces of the permanent substrate; a bonding layer deposed on the second contact metal layer; a diffusion barrier layer deposed on the bonding layer, wherein the permanent substrate, the bonding layer and the diffusion barrier layer are electrically conductive; a reflective metal layer deposed on the diffusion barrier layer; a transparent conductive oxide layer deposed on the reflective metal layer; an illuminant epitaxial structure deposed on the transparent conductive oxide layer, wherein the illuminant epitaxial structure includes a first surface and a second surface opposite to the first surface; and a second conductivity type compound electrode pad deposed on the second surface of the illuminant epitaxial structure.

    Abstract translation: 对高效率的发光二极管及其制造方法进行说明。 高效率发光二极管包括：永久性基板; 分别设置在所述永久基板的两个相对表面上的第一接触金属层和第二接触金属层; 位于所述第二接触金属层上的接合层; 扩散阻挡层，其设置在所述接合层上，其中所述永久性基板，所述接合层和所述扩散阻挡层是导电的; 沉积在扩散阻挡层上的反射金属层; 位于反射金属层上的透明导电氧化物层; 所述发光体外延结构被设置在所述透明导电氧化物层上，其中所述发光体外延结构包括第一表面和与所述第一表面相对的第二表面; 以及位于所述发光体外延结构的第二表面上的第二导电型复合电极焊盘。

    LIGHT-EMITTING STRUCTURE
    5.
    发明申请
    LIGHT-EMITTING STRUCTURE 有权

    公开(公告)号：US20210183942A1

    公开(公告)日：2021-06-17

    申请号：US17170407

    申请日：2021-02-08

    Applicant: EPISTAR CORPORATION

    Inventor： Chien-Fu SHEN ,  Chao-Hsing CHEN ,  Tsun-Kai KO ,  Schang-Jing HON ,  Sheng-Jie HSU ,  De-Shan KUO ,  Hsin-Ying WANG ,  Chiu-Lin YAO ,  Chien-Fu HUANG ,  Hsin-Mao LIU ,  Chien-Kai CHUNG

    IPC: H01L27/15 ,  H01L25/075 ,  H01L33/20 ,  H01L33/62 ,  H01L33/38 ,  H01L33/44

    Abstract: A light-emitting device, includes a substrate with a top surface; a first light-emitting structure unit and a second light-emitting structure unit separately formed on the top surface and adjacent to each other, and wherein the first light-emitting structure unit includes a first sidewall and a second sidewall; a trench between the first and the second light-emitting structure units; and an electrical connection arranged on the first sidewall and the second light-emitting structure unit, and electrically connecting the first light-emitting structure unit and the second light-emitting structure unit; wherein the first sidewall connects to the top surface; wherein the first sidewall faces the second light-emitting structure units, and the second sidewall is not between the first light-emitting structure unit and the second light-emitting structure unit; and wherein the second sidewall is steeper than the first sidewall.

    LIGHT-EMITTING ELEMENT
    6.
    发明申请
    LIGHT-EMITTING ELEMENT 审中-公开
    发光元件

    公开(公告)号：US20170018684A1

    公开(公告)日：2017-01-19

    申请号：US15279149

    申请日：2016-09-28

    Applicant: EPISTAR CORPORATION

    Inventor： Schang-Jing HON ,  Chao-Hsing CHEN ,  Tsun-Kai KO ,  Chien-Fu SHEN ,  Jia-Kuen WANG ,  Hung-Che CHEN

    IPC: H01L33/38 ,  H01L33/62 ,  H01L33/54 ,  H01L33/24 ,  H01L33/46

    CPC classification number: H01L33/387 ,  H01L33/20 ,  H01L33/24 ,  H01L33/38 ,  H01L33/44 ,  H01L33/46 ,  H01L33/54 ,  H01L33/62 ,  H01L2224/73265

    Abstract: A light-emitting element comprises a substrate; a light-emitting semiconductor stack on the substrate, the light-emitting semiconductor stack comprising a first semiconductor layer, a second semiconductor layer on the first semiconductor layer, and a light-emitting layer between the first semiconductor layer and the second semiconductor layer; a first electrode on the first semiconductor layer; a reflective layer formed on the light-emitting semiconductor stack; a protection layer formed on the light-emitting semiconductor stack; and a conductive contact layer formed on the light-emitting semiconductor stack, wherein each layer above the substrate comprises a side surface inclined to a top surface of the substrate.

    Abstract translation: 发光元件包括基板; 在所述基板上的发光半导体堆叠，所述发光半导体堆叠包括第一半导体层，所述第一半导体层上的第二半导体层以及所述第一半导体层和所述第二半导体层之间的发光层; 在所述第一半导体层上的第一电极; 形成在所述发光半导体堆叠上的反射层; 形成在所述发光半导体堆叠上的保护层; 以及形成在所述发光半导体堆叠上的导电接触层，其中所述衬底上方的每个层包括倾斜于所述衬底的顶表面的侧表面。

    LIGHT-EMITTING ELEMENT
    8.
    发明申请
    LIGHT-EMITTING ELEMENT 有权

    公开(公告)号：US20210202797A1

    公开(公告)日：2021-07-01

    申请号：US17185551

    申请日：2021-02-25

    Applicant: EPISTAR CORPORATION

    Inventor： Schang-Jing HON ,  Chao-Hsing CHEN ,  Tsun-Kai KO ,  Chien-Fu SHEN ,  Jia-Kuen WANG ,  Hung-Che CHEN

    IPC: H01L33/38 ,  H01L33/62 ,  H01L33/54 ,  H01L33/44 ,  H01L33/46 ,  H01L33/20 ,  H01L33/24

    Abstract: A light-emitting element includes a substrate including a first side, a second side and a third side connecting the first side and the second side; a light-emitting semiconductor stack on the substrate and including a first semiconductor layer, a second semiconductor layer, and a light-emitting layer between the first semiconductor layer and the second semiconductor layer; a first electrode on the first semiconductor layer and including a contact area and a first extension area; a second electrode on the second semiconductor layer; a protection layer on the light-emitting semiconductor stack and including a first through hole exposing the first electrode and a second through hole exposing the second electrode; a first conductive part on the protection layer and electrically connected to the first electrode; and a second conductive part on the protection layer and electrically connected to the second electrode, wherein the second conductive part comprises a projected area on the light-emitting semiconductor stack, the first extension area is located outside the projected area and located between the second conductive part and the third side.

    LIGHT-EMITTING ELEMENT
    9.
    发明申请
    LIGHT-EMITTING ELEMENT 审中-公开

    公开(公告)号：US20190312179A1

    公开(公告)日：2019-10-10

    申请号：US16446059

    申请日：2019-06-19

    Applicant: EPISTAR CORPORATION

    Inventor： Schang-Jing HON ,  Chao-Hsing CHEN ,  Tsun-Kai KO ,  Chien-Fu SHEN ,  Jia-Kuen WANG ,  Hung-Che CHEN

    IPC: H01L33/38 ,  H01L33/46 ,  H01L33/44 ,  H01L33/24 ,  H01L33/62 ,  H01L33/20 ,  H01L33/54

    Abstract: A light-emitting element comprises a light-emitting semiconductor stack comprising a first semiconductor layer, a second semiconductor layer on the first semiconductor layer, and a light-emitting layer between the first semiconductor layer and the second semiconductor layer; a reflective layer formed on the light-emitting semiconductor stack; a barrier layer formed on the reflective stack; a protection layer formed on the barrier layer, comprising a first through hole and a second through hole; a first height balancer filled in the first through hole and formed on the protection layer; a second height balancer filled in the second through hole and formed on the protection layer; and a conductive contact layer comprising a first conductive part formed on the first height balancer and a second conductive part formed on the second height balancer.

    OPTOELECTRONIC SEMICONDUCTOR DEVICE
    10.
    发明申请
    OPTOELECTRONIC SEMICONDUCTOR DEVICE 审中-公开
    光电半导体器件

    公开(公告)号：US20160372635A1

    公开(公告)日：2016-12-22

    申请号：US15256263

    申请日：2016-09-02

    Applicant: EPISTAR CORPORATION

    Inventor： Tsun-Kai KO ,  Schang-Jing HON ,  Chien-Kai CHUNG ,  Hui-Chun YEH ,  An-Ju LIN ,  Chien-Fu SHEN ,  Chen OU

    IPC: H01L33/38 ,  H01L33/42 ,  H01L33/22 ,  H01L33/06 ,  H01L33/14

    CPC classification number: H01L33/387 ,  H01L33/06 ,  H01L33/14 ,  H01L33/22 ,  H01L33/382 ,  H01L33/42 ,  H01L33/44 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: An optoelectronic semiconductor device comprises a substrate; a semiconductor system including a first conductivity layer, a second conductivity layer, and a conversion unit between the first conductivity layer and the second conductivity layer, wherein the first conductivity layer is closer to the substrate than the second conductivity layer is to the substrate, and the second conductivity layer comprises a top surface perpendicular to a thickness direction of the semiconductor system, and in a top view of the semiconductor system, an outline of the first conductivity layer surrounds an outline of the second conductivity layer; a first electrical connector on the first conductivity layer of the semiconductor system; a second electrical connector comprising a shape formed on the second conductivity layer of the semiconductor system; and a contact layer formed on the top surface of the second conductivity layer and having an outer perimeter at an inner side of the outline of the second conductivity layer in the top view of the semiconductor system, wherein the contact layer comprises a discontinuous region exposing the top surface of the second conductivity layer, the discontinuous region is formed along the shape of the second electrical connector.

    Abstract translation: 光电子半导体器件包括衬底; 包括第一导电层，第二导电层和第一导电层与第二导电层之间的转换单元的半导体系统，其中第一导电层比第二导电层更靠近基板，并且 所述第二导电层包括垂直于所述半导体系统的厚度方向的顶表面，并且在所述半导体系统的俯视图中，所述第一导电层的轮廓围绕所述第二导电层的轮廓; 在半导体系统的第一导电层上的第一电连接器; 第二电连接器，包括形成在半导体系统的第二导电层上的形状; 以及形成在所述第二导电层的顶表面上并且在所述半导体系统的顶视图中在所述第二导电层的轮廓的内侧具有外周的接触层，其中所述接触层包括暴露所述第二导电层的不连续区域 第二导电层的顶表面沿着第二电连接器的形状形成不连续区域。

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