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公开(公告)号：US20240030383A1
公开(公告)日：2024-01-25
申请号：US18225435
申请日：2023-07-24
Applicant: EPISTAR CORPORATION
Inventor： Shih-Kuo LAI , Chao-Yi TSENG , Hai LIN , Zhong JU
Abstract: A light-emitting element includes a substrate includes an upper surface; a plurality of protrusions formed on the upper surface, wherein the plurality of protrusions includes a height less than or equal to 1 μm; and a stack structure formed on the substrate, wherein the stack structure includes a first doped semiconductor layer, a light-emitting layer, and a second doped semiconductor layer, wherein the stack structure includes a total thickness less than 4 μm.
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公开(公告)号：US20140017840A1
公开(公告)日：2014-01-16
申请号：US14029297
申请日：2013-09-17
Applicant: EPISTAR CORPORATION
Inventor： Chen OU , Wen-Hsiang LIN , Shih-Kuo LAI
IPC: H01L33/00
CPC classification number: H01L33/0075 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L33/007 , H01L33/12
Abstract: A nitride-based light-emitting device includes a substrate and a plurality of layers formed over the substrate in the following sequence: a nitride-based buffer layer formed by nitrogen, a first group III element, and optionally, a second group III element, a first nitride-based semiconductor layer, a light-emitting layer, and a second nitride-based semiconductor layer.
Abstract translation: 氮化物系发光器件包括基板和在该基板上形成的多个层，其顺序如下：由氮形成的基于氮化物的缓冲层，第一III族元素和任选的第二III族元素， 第一氮化物基半导体层，发光层和第二氮化物基半导体层。
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公开(公告)号：US20210399170A1
公开(公告)日：2021-12-23
申请号：US17349484
申请日：2021-06-16
Applicant: EPISTAR CORPORATION
Inventor： Shih-Kuo LAI , Li-Shen TANG
Abstract: A light-emitting device comprises a substrate; a first semiconductor layer formed on the substrate; a first patterned layer formed on the first semiconductor layer; and a second semiconductor layer formed on the first semiconductor layer, wherein the second semiconductor layer comprises a core layer comprising a group III or transition metal material formed along the first patterned layer.
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