公开(公告)号：US20160049444A1

公开(公告)日：2016-02-18

申请号：US14922707

申请日：2015-10-26

Applicant: EPISTAR CORPORATION

Inventor： Shu-Ting HSU ,  Yen-Wen CHEN ,  Wei-Yo CHEN ,  Tsung-Xian LEE

IPC: H01L27/15 ,  H01L33/62 ,  H01L33/50

CPC classification number: H01L27/156 ,  F21V9/08 ,  G02F1/133603 ,  H01L24/24 ,  H01L33/505 ,  H01L33/508 ,  H01L33/62 ,  H01L2924/12041 ,  H01L2924/12044 ,  H01L2924/00

Abstract: The application discloses an array-type light-emitting device comprising a substrate, a semiconductor light-emitting array formed on the substrate and emitting a first light with a first spectrum, wherein the semiconductor light-emitting array comprises a first light-emitting unit and a second light-emitting units, a first wavelength conversion layer formed on the first light-emitting unit for converting the first light into a third light with a third spectrum, and a circuit layer connecting the first light-emitting unit and the second light-emitting unit in a connection form to make the first light-emitting and the second light-emitting unit light alternately in accordance with a predetermined clock when driving by a power supply.

公开(公告)号：US20130222731A1

公开(公告)日：2013-08-29

申请号：US13854534

申请日：2013-04-01

Applicant: EPISTAR CORPORATION

Inventor： Shu-Ting HSU ,  Yen-Wen CHEN ,  Wei-Yo CHEN ,  Tsung Xian LEE

IPC: G02F1/1335 ,  F21V9/08

CPC classification number: H01L27/156 ,  F21V9/08 ,  G02F1/133603 ,  H01L24/24 ,  H01L33/505 ,  H01L33/508 ,  H01L33/62 ,  H01L2924/12041 ,  H01L2924/12044 ,  H01L2924/00

Abstract: The application discloses an array-type light-emitting device comprising a substrate, a semiconductor light-emitting array formed on the substrate and emitting a first light with a first spectrum, wherein the semiconductor light-emitting array comprises a first light-emitting unit and a second light-emitting units, a first wavelength conversion layer formed on the first light-emitting unit for converting the first light into a third light with a third spectrum, and a circuit layer connecting the first light-emitting unit and the second light-emitting unit in a connection form to make the first light-emitting and the second light-emitting unit light alternately in accordance with a predetermined clock when driving by a power supply.

Abstract translation: 本申请公开了一种阵列型发光装置，其包括基板，形成在基板上的半导体发光阵列，并发射具有第一光谱的第一光，其中半导体发光阵列包括第一发光单元和 第二发光单元，形成在第一发光单元上的用于将第一光转换成具有第三光谱的第三光的第一波长转换层，以及连接第一发光单元和第二发光单元的电路层， 发光单元，以使得第一发光单元和第二发光单元在通过电源驱动时根据预定时钟交替点亮。

公开(公告)号：US20140048833A1

公开(公告)日：2014-02-20

申请号：US14062154

申请日：2013-10-24

Applicant: Epistar Corporation

Inventor： Chih-Chiang LU ,  Shu-Ting HSU ,  Yen-Wen CHEN ,  Chien-Yuan WANG ,  Ru-Shi LIU ,  Min-Hsun HSIEH

IPC: H01L33/50

CPC classification number: H01L33/504 ,  H01L27/156 ,  H01L33/44 ,  H01L33/508 ,  H01L2224/18

Abstract: This application discloses a light-emitting device with narrow dominant wavelength distribution and a method of making the same. The light-emitting device with narrow dominant wavelength distribution at least includes a substrate, a plurality of light-emitting stacked layers on the substrate, and a plurality of wavelength transforming layers on the light-emitting stacked layers, wherein the light-emitting stacked layer emits a first light with a first dominant wavelength variation; the wavelength transforming layer absorbs the first light and converts the first light into the second light with a second dominant wavelength variation; and the first dominant wavelength variation is larger than the second dominant wavelength variation.

Abstract translation: 本申请公开了一种具有窄波长分布的发光器件及其制造方法。 具有窄主波长分布的发光器件至少包括衬底，在衬底上的多个发光层叠层和发光层叠层上的多个波长转换层，其中发光层叠层 发射具有第一主波长变化的第一光; 波长转换层吸收第一光并将第一光转换成具有第二主波长变化的第二光; 并且第一主波长变化大于第二主波长变化。

公开(公告)号：US20130015584A1

公开(公告)日：2013-01-17

申请号：US13625139

申请日：2012-09-24

Applicant: EPISTAR CORPORATION

Inventor： Wei-Yo CHEN ,  Yen-Wen CHEN ,  Chien-Yuan WANG ,  Min-Hsun HSIEH ,  Tzer-Perng CHEN

IPC: H01L23/482

CPC classification number: H01L33/38 ,  H01L24/02 ,  H01L31/022408 ,  H01L31/022433 ,  H01L33/382 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/12044 ,  Y02E10/50 ,  H01L2924/00

Abstract: An optoelectronic semiconductor device includes a substrate, a semiconductor system having an active layer formed on the substrate and an electrode structure formed on the semiconductor system, wherein the layout of the electrode structure having at least a first conductivity type contact zone or a first conductivity type bonding pad, a second conductivity type bonding pad, a first conductivity type extension electrode, and a second conductivity type extension electrode wherein the first conductivity type extension electrode and the second conductivity type extension electrode have three-dimensional crossover, and partial of the first conductivity type extension electrode and the first conductivity type contact zone or the first conductivity type bonding pad are on the opposite sides of the active layer.

Abstract translation: 光电子半导体器件包括衬底，具有形成在衬底上的有源层和形成在半导体系统上的电极结构的半导体系统，其中具有至少第一导电类型接触区或第一导电类型的电极结构的布局 接合焊盘，第二导电型接合焊盘，第一导电型延伸电极和第二导电型延伸电极，其中第一导电类型延伸电极和第二导电类型延伸电极具有三维交叉，部分第一导电性 第一导电型接触区或第一导电型接合垫位于有源层的相对侧上。