公开(公告)号：US20170170375A1

公开(公告)日：2017-06-15

申请号：US15438430

申请日：2017-02-21

Applicant: EPISTAR CORPORATION

Inventor： Chien-Fu HUANG ,  Yao-Ning CHAN ,  Tzu Chieh HSU ,  Yi Ming CHEN ,  Hsin-Chih CHIU ,  Chih-Chiang LU ,  Chia-Liang HSU ,  Chun-Hsien CHANG

IPC: H01L33/62 ,  H01L33/38

CPC classification number: H01L33/62 ,  H01L25/167 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/38 ,  H01L33/385 ,  H01L33/48 ,  H01L2933/0016 ,  H01L2933/0033 ,  H01L2933/0066

Abstract: The present disclosure provides a method of manufacturing a light-emitting device, which comprises providing a first substrate and a plurality of semiconductor stacked blocks on the first substrate, and each of the plurality semiconductor stacked blocks comprises a first conductive-type semiconductor layer, a light-emitting layer on the first conductive-type semiconductor layer, and a second conductive-type semiconductor layer on the light-emitting layer; wherein there is a trench separating two adjacent semiconductor stacked blocks on the first substrate, and a width of the trench is less than 10 μm; and conducting a first separating step to separate a first semiconductor stacked block of the plurality of semiconductor stacked blocks from the first substrate and keep a second semiconductor stacked block on the first substrate.

公开(公告)号：US20160218247A1

公开(公告)日：2016-07-28

申请号：US14902795

申请日：2013-07-05

Applicant: EPISTAR CORPORATION

Inventor： Chien-Fu HUANG ,  Yao-Ning CHAN ,  Tzu Chieh HSU ,  Yi Ming CHEN ,  Hsin-Chih CHIU ,  Chih-Chiang LU ,  Chia-Liang HSU ,  Chun-Hsien CHANG

IPC: H01L33/48 ,  H01L33/38

CPC classification number: H01L33/62 ,  H01L25/167 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/38 ,  H01L33/385 ,  H01L33/48 ,  H01L2933/0016 ,  H01L2933/0033 ,  H01L2933/0066

Abstract: The present disclosure provides a method of manufacturing a light-emitting device, which comprises providing a first substrate and a plurality of semiconductor stacked blocks on the first substrate, and each of the plurality semiconductor stacked blocks comprises a first conductive-type semiconductor layer, a light-emitting layer on the first conductive-type semiconductor layer, and a second conductive-type semiconductor layer on the light-emitting layer; wherein there is a trench separating two adjacent semiconductor stacked blocks on the first substrate, and a width of the trench is less than 10 μm; and conducting a first separating step to separate a first semiconductor stacked block of the plurality of semiconductor stacked blocks from the first substrate and keep a second semiconductor stacked block on the first substrate.

Abstract translation: 本公开提供一种制造发光器件的方法，其包括在第一衬底上提供第一衬底和多个半导体堆叠块，并且多个半导体堆叠块中的每一个包括第一导电型半导体层， 第一导电型半导体层上的发光层和发光层上的第二导电型半导体层; 其中在所述第一基板上存在分隔两个相邻的半导体层叠块的沟槽，并且所述沟槽的宽度小于10μm; 并且进行第一分离步骤以将多个半导体堆叠块的第一半导体堆叠块与第一衬底分离，并将第二半导体堆叠块保持在第一衬底上。

公开(公告)号：US20130256731A1

公开(公告)日：2013-10-03

申请号：US13901191

申请日：2013-05-23

Applicant: EPISTAR CORPORATION

Inventor： Huang Chien FU ,  Shih-I CHEN ,  Yi Ming CHEN ,  Tzu Chieh HSU ,  Jhih-Sian WANG

IPC: H01L33/22

CPC classification number: H01L33/22 ,  H01L33/0079 ,  H01L33/38 ,  H01L33/405 ,  H01L33/42

Abstract: This disclosure discloses a light-emitting device. The light-emitting device comprises: a substrate; and a first light-emitting unit comprising a plurality of light-emitting diodes electrically connected to each other on the substrate. A first light-emitting diode in the first light-emitting unit comprises a first semiconductor layer with a first conductivity-type, a second semiconductor layer with a second conductivity-type, and a light-emitting stack formed between the first and second semiconductor layers. The first light-emitting diode in the first light-emitting unit further comprises a first connecting layer on the first semiconductor layer for electrically connecting to a second light-emitting diode in the first light-emitting unit; a second connecting layer, separated from the first connecting layer, formed on the first semiconductor layer; and a third connecting layer on the second semiconductor layer for electrically connecting to a third light-emitting diode in the first light-emitting unit.

Abstract translation: 本公开公开了一种发光装置。 发光装置包括：基板; 以及包括在所述基板上彼此电连接的多个发光二极管的第一发光单元。 第一发光单元中的第一发光二极管包括具有第一导电类型的第一半导体层，具有第二导电类型的第二半导体层和形成在第一和第二半导体层之间的发光叠层 。 第一发光单元中的第一发光二极管还包括在第一半导体层上的第一连接层，用于电连接到第一发光单元中的第二发光二极管; 与所述第一连接层分离的形成在所述第一半导体层上的第二连接层; 以及在第二半导体层上的第三连接层，用于电连接到第一发光单元中的第三发光二极管。