公开(公告)号：US20140175493A1

公开(公告)日：2014-06-26

申请号：US14169035

申请日：2014-01-30

Applicant: EPISTAR CORPORATION

Inventor： Ying Ming Chen ,  Tzu Chieh Hsu ,  Jhih-Sian Wang ,  Chien-Fu Huang ,  Shih-I Chen

IPC: H01L33/24 ,  H01L33/22 ,  H01L33/10

CPC classification number: H01L33/24 ,  H01L24/05 ,  H01L33/0079 ,  H01L33/10 ,  H01L33/20 ,  H01L33/22 ,  H01L33/38 ,  H01L33/387 ,  H01L33/62 ,  H01L2224/05552 ,  H01L2924/12032 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/00

Abstract: A light-emitting device includes a semiconductor light-emitting stack; a current injected portion formed on the semiconductor light-emitting stack; an extension portion having a first branch radiating from the current injected portion and a second branch extending from the first branch; an electrical contact structure between the second branch and the semiconductor light-emitting stack and having a first width; and a current blocking structure located right beneath the electrical contact structure and having a second width larger than the first width.

Abstract translation: 发光装置包括半导体发光叠层; 形成在半导体发光叠层上的电流注入部分; 具有从所述电流注入部分辐射的第一分支的延伸部分和从所述第一分支延伸的第二分支; 所述第二分支和所述半导体发光叠层之间的电接触结构具有第一宽度; 以及位于电接触结构正下方并且具有大于第一宽度的第二宽度的电流阻挡结构。

公开(公告)号：US08987776B2

公开(公告)日：2015-03-24

申请号：US14169035

申请日：2014-01-30

Applicant: Epistar Corporation

Inventor： Ying Ming Chen ,  Tzu Chieh Hsu ,  Jhih-Sian Wang ,  Chien-Fu Huang ,  Shih-I Chen

IPC: H01L33/24 ,  H01L33/38 ,  H01L33/62 ,  H01L23/00 ,  H01L33/10 ,  H01L33/22 ,  H01L33/00 ,  H01L33/20

CPC classification number: H01L33/24 ,  H01L24/05 ,  H01L33/0079 ,  H01L33/10 ,  H01L33/20 ,  H01L33/22 ,  H01L33/38 ,  H01L33/387 ,  H01L33/62 ,  H01L2224/05552 ,  H01L2924/12032 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/00

Abstract: A light-emitting device includes a semiconductor light-emitting stack; a current injected portion formed on the semiconductor light-emitting stack; an extension portion having a first branch radiating from the current injected portion and a second branch extending from the first branch; an electrical contact structure between the second branch and the semiconductor light-emitting stack and having a first width; and a current blocking structure located right beneath the electrical contact structure and having a second width larger than the first width.

Abstract translation: 发光装置包括半导体发光叠层; 形成在半导体发光叠层上的电流注入部分; 具有从所述电流注入部分辐射的第一分支的延伸部分和从所述第一分支延伸的第二分支; 所述第二分支和所述半导体发光叠层之间的电接触结构具有第一宽度; 以及位于电接触结构正下方并且具有大于第一宽度的第二宽度的电流阻挡结构。