Multi-gas Detection System and Method

    公开(公告)号:US20220390378A1

    公开(公告)日:2022-12-08

    申请号:US17828845

    申请日:2022-05-31

    Abstract: A Raman multi-gas detection system including an enhancement unit coupled between a light source and a detector. The enhancement unit includes a nanongrid having a plurality of nanogaps. A gas is coupled to the enhancement unit and is configured to flow through the plurality of nanogaps of the nanogrid. The nanogrid comprises one or more plasmon-active materials. The light source is configured to generate plasmon-enhanced electric fields in the plurality of nanogaps of the nanogrid to induce enhanced Raman scattering of the constituent molecules in the gas within the plurality of nanogaps such that a plurality of different constituent molecules in the gas can be detected. In one embodiment, a molecule in the gas is configured to scatter the light from the light source at a rate more than 1000 times greater than in the free space in the enhancement unit.

    Multi-gas Detection System and Method
    2.
    发明公开

    公开(公告)号:US20240280494A1

    公开(公告)日:2024-08-22

    申请号:US18598259

    申请日:2024-03-07

    CPC classification number: G01N21/658 G01J3/44 G01N2201/0221 G01N2201/06113

    Abstract: A Raman multi-gas detection system including an enhancement unit coupled between a light source and a detector. The enhancement unit includes a nanogrid having a plurality of nanogaps. A gas is coupled to the enhancement unit and is configured to flow through the plurality of nanogaps of the nanogrid. The nanogrid comprises one or more plasmon-active materials. The light source is configured to generate plasmon-enhanced electric fields in the plurality of nanogaps of the nanogrid to induce enhanced Raman scattering of the constituent molecules in the gas within the plurality of nanogaps such that a plurality of different constituent molecules in the gas can be detected. In one embodiment, a molecule in the gas is configured to scatter the light from the light source at a rate more than 10000 times greater than in the free space in the enhancement unit.

    Multi-gas detection system and method

    公开(公告)号:US11959859B2

    公开(公告)日:2024-04-16

    申请号:US17828845

    申请日:2022-05-31

    CPC classification number: G01N21/658 G01J3/44 G01N2201/0221 G01N2201/06113

    Abstract: A Raman multi-gas detection system including an enhancement unit coupled between a light source and a detector. The enhancement unit includes a nanongrid having a plurality of nanogaps. A gas is coupled to the enhancement unit and is configured to flow through the plurality of nanogaps of the nanogrid. The nanogrid comprises one or more plasmon-active materials. The light source is configured to generate plasmon-enhanced electric fields in the plurality of nanogaps of the nanogrid to induce enhanced Raman scattering of the constituent molecules in the gas within the plurality of nanogaps such that a plurality of different constituent molecules in the gas can be detected. In one embodiment, a molecule in the gas is configured to scatter the light from the light source at a rate more than 1000 times greater than in the free space in the enhancement unit.

    METHOD FOR MANUFACTURING A SINGLE CRYSTAL NANO-WIRE
    4.
    发明申请
    METHOD FOR MANUFACTURING A SINGLE CRYSTAL NANO-WIRE 审中-公开
    制造单晶纳米线的方法

    公开(公告)号:US20120202325A1

    公开(公告)日:2012-08-09

    申请号:US13390231

    申请日:2010-08-16

    Abstract: A method for manufacturing a single crystal nano-structure includes providing a device layer with a 100 structure on a substrate; providing a stress layer onto the device layer; patterning the stress layer along the 110 direction of the device layer; selectively removing parts of the stress layer to obtain exposed parts of the device layer; plane dependent etching of the exposed parts of the device layer to obtain an exposed 111 faces of the device layer; thermally oxidizing the exposed 111 face of the device layer and forming a lateral oxidation layer at an interface of the device layer and the stress layer; providing a mask layer onto the oxidized exposed 111 face of the device layer; removing remaining parts of the stress layer to obtain further exposed parts of the device layer; removing the mask layer; plane dependent etching of the further exposed parts of the device layer to form a single crystal nano-structure with a triangular shaped cross section, until a side of the triangular shaped cross section coplanar to a side of a cross section of the oxidized exposed 111 face is small in comparison with the side of the cross section of the oxidized exposed 111 face.

    Abstract translation: 制造单晶纳米结构的方法包括在基板上提供具有100结构的器件层; 在器件层上提供应力层; 沿着器件层的110方向图案化应力层; 选择性地去除应力层的部分以获得器件层的暴露部分; 平面依赖蚀刻器件层的暴露部分以获得器件层的暴露的111个面; 热氧化器件层的暴露的111面并在器件层和应力层的界面处形成侧向氧化层; 在所述器件层的氧化的暴露的111表面上提供掩模层; 去除应力层的剩余部分以获得装置层的进一步暴露部分; 去除掩模层; 平面依赖蚀刻器件层的另外的暴露部分以形成具有三角形截面的单晶纳米结构,直到三角形截面的一侧与氧化的暴露的111面的横截面的一侧共面 与氧化的暴露的111面的横截面相比较小。

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