Low wideband noise multi-stage switch-mode power amplifier

    公开(公告)号:US10680563B2

    公开(公告)日:2020-06-09

    申请号:US15985921

    申请日:2018-05-22

    Abstract: A multi-stage radio frequency power amplifier (RFPA) includes an output stage SMPA and a driver stage SMPA. As the multi-stage RFPA operates, the magnitude of an RF switch drive signal generated by the driver stage SMPA is dynamically minimized based on I-V characteristic curves of the output stage SMPA's power transistor and the output stage SMPA's dynamically changing load line. By constraining the magnitude of the RF switch drive signal as the multi-stage RFPA operates, VGS feedthrough of the RF switch drive signal is minimized, to the extent possible. Amplitude distortion and phase distortion in the RF output that might occur due to unconstrained VGS feedthrough, particularly at low output RF power levels, are therefore avoided. Operating all stages of the multi-stage RFPA in switch mode also results in high energy efficiency and an output RF spectrum with very low wideband noise (WBN).

    BOOSTRAP CLASS-D WIDEBAND RF POWER AMPLIFIER
    3.
    发明申请
    BOOSTRAP CLASS-D WIDEBAND RF POWER AMPLIFIER 有权
    BOOSTRAP CLASS-D宽带射频功率放大器

    公开(公告)号:US20160380600A1

    公开(公告)日:2016-12-29

    申请号:US14754656

    申请日:2015-06-29

    Inventor: Quentin Diduck

    Abstract: A high-power, high-frequency radio frequency power amplifier includes an output stage and a single-phase driver. The output stage is arranged in a Class-D amplifier configuration and includes a first depletion mode field effect transistor (FET), a second depletion mode FET, and a bootstrap path that couples the output of the output stage to the gate of the second FET. The first and second depletion mode FETs are switched out-of-phase and between fully-ON and fully-OFF states, under the direction of the single-phase driver. The single-phase driver directly controls the ON/OFF state of the first depletion mode FET and provides a discharge path through which the input gate capacitor of the second depletion mode FET in the output stage can discharge to turn OFF the second depletion mode FET. The bootstrap path provides a current path through which the input gate capacitor of the second depletion mode FET can charge to turn the second depletion mode FET ON.

    Abstract translation: 高功率高频射频功率放大器包括输出级和单相驱动器。 输出级配置在D类放大器配置中,并且包括第一耗尽型场效应晶体管(FET),第二耗尽型FET和将输出级的输出耦合到第二FET的栅极的自举路径 。 在单相驱动器的方向下,第一和第二耗尽型FET在异相和完全导通和完全断开状态之间切换。 单相驱动器直接控制第一耗尽型FET的导通/截止状态,并且提供放电路径,输出级中的第二耗尽型FET的输入栅极电容器可通过该放电路径放电以关断第二耗尽型FET。 自举路径提供电流路径,第二耗尽型FET的输入栅极电容器可通过该电流通路充电以使第二耗尽型FET导通。

    Integrated Circuit / Printed Circuit Board Assembly and Method of Manufacture

    公开(公告)号:US20210337654A1

    公开(公告)日:2021-10-28

    申请号:US17369676

    申请日:2021-07-07

    Abstract: An integrated circuit printed circuit board (IC-PCB) assembly comprises a PCB and a heatsink plate. The PCB has a first side including a first patterned conductive layer with one or more thermal pads onto which one or more heat slugs of one or more ICs mount, and a second, opposing side including a second patterned conductive layer with a heatsink plate receiving pad onto which the heatsink plate mounts. The heatsink plate has one or more posts that project from a mounting surface of the heatsink plate, and when the heatsink plate is mounted to the heatsink plate receiving pad, each post extends from the second side of the PCB, through a matching hole in the PCB, and to an associated thermal pad located on the first side of the PCB.

    Bootstrap class-D wideband RF power amplifier

    公开(公告)号:US09806678B2

    公开(公告)日:2017-10-31

    申请号:US14754656

    申请日:2015-06-29

    Inventor: Quentin Diduck

    Abstract: A high-power, high-frequency radio frequency power amplifier includes an output stage and a single-phase driver. The output stage is arranged in a Class-D amplifier configuration and includes a first depletion mode field effect transistor (FET), a second depletion mode FET, and a bootstrap path that couples the output of the output stage to the gate of the second FET. The first and second depletion mode FETs are switched out-of-phase and between fully-ON and fully-OFF states, under the direction of the single-phase driver. The single-phase driver directly controls the ON/OFF state of the first depletion mode FET and provides a discharge path through which the input gate capacitor of the second depletion mode FET in the output stage can discharge to turn OFF the second depletion mode FET. The bootstrap path provides a current path through which the input gate capacitor of the second depletion mode FET can charge to turn the second depletion mode FET ON.

    Low Wideband Noise Multi-Stage Switch-Mode Power Amplifier

    公开(公告)号:US20180342991A1

    公开(公告)日:2018-11-29

    申请号:US15985921

    申请日:2018-05-22

    Abstract: A multi-stage radio frequency power amplifier (RFPA) includes an output stage SMPA and a driver stage SMPA. As the multi-stage RFPA operates, the magnitude of an RF switch drive signal generated by the driver stage SMPA is dynamically minimized based on I-V characteristic curves of the output stage SMPA's power transistor and the output stage SMPA's dynamically changing load line. By constraining the magnitude of the RF switch drive signal as the multi-stage RFPA operates, VGS feedthrough of the RF switch drive signal is minimized, to the extent possible. Amplitude distortion and phase distortion in the RF output that might occur due to unconstrained VGS feedthrough, particularly at low output RF power levels, are therefore avoided. Operating all stages of the multi-stage RFPA in switch mode also results in high energy efficiency and an output RF spectrum with very low wideband noise (WBN).

    Integrated circuit / printed circuit board assembly and method of manufacture

    公开(公告)号:US11089671B2

    公开(公告)日:2021-08-10

    申请号:US16695377

    申请日:2019-11-26

    Abstract: An integrated circuit/printed circuit board (IC-PCB) assembly comprises a PCB and a heatsink plate. The PCB has a first side including a first patterned conductive layer with one or more thermal pads onto which one or more heat slugs of one or more ICs mount, and a second, opposing side including a second patterned conductive layer with a heatsink plate receiving pad onto which the heatsink plate mounts. The heatsink plate has one or more posts that project from a mounting surface of the heatsink plate, and when the heatsink plate is mounted to the heatsink plate receiving pad, each post extends from the second side of the PCB, through a matching hole in the PCB, and to an associated thermal pad located on the first side of the PCB.

    Integrated Circuit / Printed Circuit Board Assembly and Method of Manufacture

    公开(公告)号:US20210160997A1

    公开(公告)日:2021-05-27

    申请号:US16695377

    申请日:2019-11-26

    Abstract: An integrated circuit/printed circuit board (IC-PCB) assembly comprises a PCB and a heatsink plate. The PCB has a first side including a first patterned conductive layer with one or more thermal pads onto which one or more heat slugs of one or more ICs mount, and a second, opposing side including a second patterned conductive layer with a heatsink plate receiving pad onto which the heatsink plate mounts. The heatsink plate has one or more posts that project from a mounting surface of the heatsink plate, and when the heatsink plate is mounted to the heatsink plate receiving pad, each post extends from the second side of the PCB, through a matching hole in the PCB, and to an associated thermal pad located on the first side of the PCB.

    Polar modulation transmitter with wideband product mode control

    公开(公告)号:US10735034B1

    公开(公告)日:2020-08-04

    申请号:US16539844

    申请日:2019-08-13

    Inventor: Quentin Diduck

    Abstract: A wideband polar modulation transmitter includes a power amplifier (PA), a PA driver, a dynamic power supply (DPS), a PA driver VH controller, and a phase modulator. The phase modulator modulates a radio frequency (RF) carrier by an input phase modulating signal PM(t) to produce a phase modulated RF carrier. Meanwhile, the DPS produces a DPS voltage for the PA that follows an input amplitude modulating signal AM(t). Using the phase modulated RF carrier, the PA driver generates a PA drive signal VDRV for driving the PA. The PA drive signal VDRV has a high drive level VH and a low drive level VL. The PA driver VH controller is configured to control the magnitude of the high drive level VH so that it remains sufficiently high to force the PA to operate in a compressed mode (C-mode) most of the time but lowers the high drive level VH to force the PA to operate in a product mode (P-mode) during times low-magnitude events occur in the DPS voltage.

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