公开(公告)号：US10325985B2

公开(公告)日：2019-06-18

申请号：US15327263

申请日：2015-07-21

Applicant: FLEXENABLE LIMITED

Inventor： Jan Jongman ,  Anja Wellner ,  Jens Dienelt ,  Karsten Neumann ,  Stephan Riedel

IPC: H01L29/10 ,  H01L27/32 ,  H01L51/05 ,  H01L51/00

Abstract: A technique comprising: providing a stack of layers defining at least (a) source and drain electrodes, (b) gate electrode, and (c) semiconductor channel of at least one transistor; depositing one or more organic insulating layers over the stack; removing at least part of the stack in one or more selected regions by an ablation technique; depositing conductor material over the stack in at least the one or more ablated regions and one or more border regions immediately surrounding a respective ablated region; and depositing inorganic insulating material over the stack at least in the ablated regions and the border regions to cover the ablated regions and make direct contact with said conductor material in said one or more border regions all around the respective ablated region.