公开(公告)号：US20190157400A1

公开(公告)日：2019-05-23

申请号：US16313239

申请日：2017-06-30

Applicant: FLOSFIA INC.

Inventor： Tomochika TANIKAWA ,  Toshimi HITORA

IPC: H01L29/24 ,  C01G55/00 ,  H01L35/22 ,  H01L21/02 ,  H01L33/26

Abstract: A new and useful oxide semiconductor film with enhanced p-type semiconductor property and the method of manufacturing the oxide semiconductor film are provided. A method of manufacturing an oxide semiconductor film including: generating atomized droplets by atomizing a raw material solution containing a metal of Group 9 of the periodic table and/or a metal of Group 13 of the periodic table and a p-type dopant; carrying the atomized droplets onto a surface of a base by using a carrier gas; causing a thermal reaction of the atomized droplets adjacent to the surface of the base under oxygen atmosphere to form the oxide semiconductor film on the base.

公开(公告)号：US20220352303A1

公开(公告)日：2022-11-03

申请号：US17866747

申请日：2022-07-18

Applicant: FLOSFIA INC. ,  KYOTO UNIVERSITY

Inventor： Shizuo FUJITA ,  Kentaro KANEKO ,  Toshimi HITORA ,  Tomochika TANIKAWA

IPC: H01L29/06 ,  H01L29/47 ,  H01L29/778 ,  H01L29/78 ,  H01L29/808 ,  H01L29/812 ,  H01L29/872 ,  H01L33/02 ,  H01L29/24 ,  H01L29/739 ,  H01L29/12 ,  H02M3/28 ,  H01L33/26

Abstract: A new and useful p-type oxide semiconductor with a wide band gap and an enhanced electrical conductivity and the method of manufacturing the p-type oxide semiconductor are provided. A method of manufacturing a p-type oxide semiconductor including: generating atomized droplets by atomizing a raw material solution containing at least a d-block metal in the periodic table and a metal of Group 13 of the periodic table; carrying the atomized droplets onto a surface of a base by using a carrier gas; causing a thermal reaction of the atomized droplets adjacent to the surface of the base under an atmosphere of oxygen to form the p-type oxide semiconductor on the base.

公开(公告)号：US20190157380A1

公开(公告)日：2019-05-23

申请号：US16313272

申请日：2017-06-30

Applicant: FLOSFIA INC. ,  KYOTO UNIVERSITY

Inventor： Shizuo FUJITA ,  Kentaro KANEKO ,  Toshimi HITORA ,  Tomochika TANIKAWA

IPC: H01L29/06 ,  H01L29/47 ,  H01L29/739 ,  H01L29/778 ,  H01L29/78 ,  H01L29/808 ,  H01L29/812 ,  H01L29/872 ,  H01L33/26

Abstract: A new and useful p-type oxide semiconductor with a wide band gap and an enhanced electrical conductivity and the method of manufacturing the p-type oxide semiconductor are provided. A method of manufacturing a p-type oxide semiconductor including: generating atomized droplets by atomizing a raw material solution containing at least a d-block metal in the periodic table and a metal of Group 13 of the periodic table; carrying the atomized droplets onto a surface of a base by using a carrier gas; causing a thermal reaction of the atomized droplets adjacent to the surface of the base under an atmosphere of oxygen to form the p-type oxide semiconductor on the base.