公开(公告)号：US20240170285A1

公开(公告)日：2024-05-23

申请号：US18425922

申请日：2024-01-29

Applicant: FLOSFIA INC. ,  KYOTO UNIVERSITY

Inventor： Kentaro KANEKO ,  Hitoshi TAKANE ,  Toshimi HITORA

IPC: H01L21/02 ,  H01L29/04

CPC classification number: H01L21/02565 ,  H01L21/02598 ,  H01L21/02609 ,  H01L29/045

Abstract: Provided is a crystalline oxide film including an oxide of germanium, an area percentage of abnormal grains determined by surface SEM observation being 3% or less.

公开(公告)号：US20240250179A1

公开(公告)日：2024-07-25

申请号：US18425724

申请日：2024-01-29

Applicant: FLOSFIA INC. ,  KYOTO UNIVERSITY

Inventor： Kentaro KANEKO ,  Hitoshi TAKANE ,  Toshimi HITORA

IPC: H01L29/786 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L29/66742

Abstract: Provided is an oxide semiconductor including an oxide of germanium, the oxide semiconductor having a carrier density of 1.0×1018/cm3 or more. Provided is method of manufacturing an oxide semiconductor including an oxide of germanium doped on a base, the method including: atomizing or forming droplets of a raw material solution containing a dopant element and germanium, a content of the germanium being greater than a content of the dopant element; supplying a carrier gas to the atomized droplets obtained; and carrying the atomized droplets onto the base by the carrier gas, and simultaneously causing the atomized droplets to thermally react on the base.

公开(公告)号：US20240170542A1

公开(公告)日：2024-05-23

申请号：US18425914

申请日：2024-01-29

Applicant: FLOSFIA INC. ,  KYOTO UNIVERSITY

Inventor： Kentaro KANEKO ,  Hitoshi TAKANE ,  Toshimi HITORA

IPC: H01L29/24 ,  C30B25/14 ,  C30B29/16 ,  H01L21/02

CPC classification number: H01L29/24 ,  C30B25/14 ,  C30B29/16 ,  H01L21/02565 ,  H01L21/02631

Abstract: An oxide crystal includes an oxide having a rutile-type structure. The oxide crystal is oriented to a crystallographic axis direction perpendicular to or parallel to a c-axis, and an atomic ratio of germanium in a metal element in the oxide crystal is greater than 0.5. A crystalline oxide film contains an oxide of germanium. A crystalline multilayer structure includes a crystal substrate, and a crystalline oxide film layered on the crystal substrate. The crystal substrate has a tetragonal crystal structure, and an atomic ratio of germanium in a metal element in the crystalline oxide film is greater than 0.5. A manufacturing method includes atomizing or forming droplets of a raw material solution containing germanium, supplying a carrier gas to the atomized droplets, and carrying the atomized droplets onto a crystal substrate having a tetragonal crystal structure and simultaneously causing the atomized droplets to thermally react on the crystal substrate.