公开(公告)号：US20250022791A1

公开(公告)日：2025-01-16

申请号：US18901920

申请日：2024-09-30

Applicant: Flosfia Inc.

Inventor： Hiroshi KONDO ,  Tatsuhiro NAKAZAWA ,  Kengo TAKEUCHI ,  Takashi SHINOHE

IPC: H01L23/498

Abstract: Provided is a semiconductor device including: a first wiring layer; a holding layer; a semiconductor element that is disposed between the first wiring layer and the holding layer and includes at least a semiconductor layer and a first electrode disposed on a first surface of the semiconductor layer; an insulator in which at least a part of the semiconductor element is embedded; and a first connecting portion that electrically connects the first wiring layer and the first electrode, wherein a connection area between the first connecting portion and the first electrode occupies 45% or more of an area of an exposed part of the first electrode.