公开(公告)号：US3772428A

公开(公告)日：1973-11-13

申请号：US3772428D

申请日：1971-01-28

Applicant: GEN ELECTRIC

Inventor： DE VRIES R ,  FLEISCHER J

IPC: C04B35/5831 ,  C01B21/06 ,  B01D9/00 ,  C01B35/00

CPC classification number: C04B35/5831

Abstract: A PREVIOUSLY UNKNOWN COMPOSITION LINE HAS BEEN DEFINED IN THE CUBIC BORON NITIDE-STABLE REGION FOR THE LI-B-N SYSTEM. BY (A) SELECTING A COMPOSITION ON THIS NEW LINE, (B) SUBJECTING THE GIVEN COMPOSITION TO CONSTANT PRESSURE, WHILE RAPIDLY REACHING AN INITIALCRYSTALLIZATION TEMPERATURE AND THEN (C) VERY SLOWLY RAISING THE TEMPERATURE, THE CRYSTALLIZATION OF CUBIC BORON NITRIDE CAN BE INITIATED AND CONTINUED.

公开(公告)号：US3766511A

公开(公告)日：1973-10-16

申请号：US3766511D

申请日：1972-12-26

Applicant: GEN ELECTRIC

Inventor： DE VRIES R ,  FLEISCHER J

IPC: H01C7/04

CPC classification number: H01C7/043

Abstract: Thermistors are provided in which the thermally sensitive semiconducting material has the formula:

Abstract translation: 提供了热敏电阻，其中热敏半导体材料具有下式：PbO.PbZO4，其中Z是选自铬，钼，钨和硫的成员或其混合物。 可以通过将两个紧密间隔的电导体浸入热敏半导体材料的熔体中来形成热敏电阻器件，以在导体之间形成材料的元件。