公开(公告)号：US3808477A

公开(公告)日：1974-04-30

申请号：US32158973

申请日：1973-01-08

Applicant: GEN ELECTRIC

Inventor： SWANK R

IPC: H01J1/308 ,  H01L15/00

CPC classification number: H01J1/308

Abstract: A semiconductor cold cathode for emitting electrons into a vacuum is described as comprising a semiconductor substrate of a first conductivity type in contact with an electrode for forming a potential energy barrier therewith and having a heterogeneous network of conductors and open spaces for enhancing the emission of electrons into the vacuum. In another embodiment of the invention, the surface-adjacent portion of the semiconductor substrate in the regions underlying the network of conductors is doped with an opposite type conductivity impurity to increase the potential energy barrier in the substrate adjacent to the conductors so as to further enhance electron emission from the open spaces in the heterogeneous network. In yet another embodiment of the invention, the surface-adjacent region of the substrate is provided with a layer of opposite-type conductivity material so as to further increase the potential barrier at the grids and also to increase the energy level of the emitted electrons.

Abstract translation: 将用于将电子发射到真空中的半导体冷阴极描述为包括与用于形成势能势垒的电极接触的第一导电类型的半导体衬底，并且具有用于增强电子发射的导体和开放空间的异质网络 进入真空。 在本发明的另一个实施例中，在导体网络下面的区域中的半导体衬底的表面相邻部分掺杂有相反类型的导电杂质，以增加与导体相邻的衬底中的势垒，从而进一步增强 来自异构网络中的开放空间的电子发射。 在本发明的另一个实施例中，衬底的表面相邻区域设置有相反导电材料层，以便进一步增加栅格处的势垒，并且还增加发射电子的能级。