High pressure/high temperature production of colorless and fancy-colored diamonds
    1.
    发明申请
    High pressure/high temperature production of colorless and fancy-colored diamonds 有权
    高压/高温生产无色和花式钻石

    公开(公告)号:US20030143150A1

    公开(公告)日:2003-07-31

    申请号:US10338136

    申请日:2003-01-08

    Abstract: The present invention is directed to a method for changing the color of colored natural diamonds. The method includes placing a discolored natural diamond in a pressure-transmitting medium which is consolidated into a pill. Next, the pill is placed into a high pressure/high temperature (HP/HT) press at elevated pressure and elevated temperature for a time sufficient to improve the color of the diamond. The diamond may be exposed at elevated-pressure and elevated-temperature conditions within the graphite-stable region of the carbon-phase diagramnullwithout significant graphitization of the diamond, or above the diamond-graphite equilibrium and within the diamond-stable region of the carbon-phase diagram. Finally, the diamond is recovered from said press. Colorless Type Ia and Type II diamonds may be made by this method.

    Abstract translation: 本发明涉及一种改变有色天然钻石颜色的方法。 该方法包括将变色的天然金刚石置于压力传递介质中,将其固结成丸剂。 接下来,将药丸置于高压/高温(HP / HT)压机中,在高压和升高的温度下,足以改善金刚石的颜色。 金刚石可以在碳相图的石墨稳定区域内的高压和高温条件下暴露,没有金刚石的显着石墨化,或高于金刚石 - 石墨平衡,并且在金刚石稳定区域内 碳相图。 最后,从所述印刷机中回收钻石。 可以通过该方法制造无色Ia型和II型金刚石。

    High pressure high temperature growth of crystalline group III metal nitrides
    2.
    发明申请
    High pressure high temperature growth of crystalline group III metal nitrides 有权
    晶体III族金属氮化物的高压高温生长

    公开(公告)号:US20030183155A1

    公开(公告)日:2003-10-02

    申请号:US10063164

    申请日:2002-03-27

    Abstract: A method of forming at least one single crystal of a Group III metal nitride. The method includes the steps of: providing a flux material and a source material comprising at least one Group III metal selected from the group consisting of aluminum, indium, and gallium, to a reaction vessel; sealing the reaction vessel; heating the reaction vessel to a predetermined temperature and applying a predetermined pressure to the vessel. The pressure is sufficient to suppress decomposition of the Group III metal nitride at the temperature. Group III metal nitrides, as well as electronic devices having a Group III metal nitride substrate formed by the method are also disclosed.

    Abstract translation: 一种形成III族金属氮化物的至少一种单晶的方法。 该方法包括以下步骤:向反应容器提供包含至少一种选自铝,铟和镓的III族金属的焊剂材料和源材料; 密封反应容器; 将反应容器加热至预定温度并向容器施加预定压力。 该压力足以在该温度下抑制第III族金属氮化物的分解。 还公开了III族金属氮化物,以及通过该方法形成的具有III族金属氮化物衬底的电子器件。

Patent Agency Ranking