公开(公告)号：US20190066786A1

公开(公告)日：2019-02-28

申请号：US15684492

申请日：2017-08-23

Applicant: GLOBALFOUNDRIES INC.

Inventor： Igor ARSOVSKI ,  Qing LI ,  Xiaoli HU ,  Wei ZHAO ,  Jieyao LIU

IPC: G11C15/04

CPC classification number: G11C15/04 ,  G11C7/065 ,  G11C7/12 ,  G11C11/419 ,  G11C2207/002

Abstract: The present disclosure relates to a structure which includes a self-referenced multiplexer circuit which is configured to pre-charge a plurality of sense lines to a voltage threshold in a first time period and sense and detect a value of a selected sense line of the sense lines in a second time period.

公开(公告)号：US20170352407A1

公开(公告)日：2017-12-07

申请号：US15175466

申请日：2016-06-07

Applicant: GLOBALFOUNDRIES INC.

Inventor： Igor ARSOVSKI ,  Qing LI ,  Wei ZHAO ,  Xiaoli HU

IPC: G11C11/419

CPC classification number: G11C11/419 ,  G11C7/067

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to sensing circuit for a memory and methods of use. The memory includes a self-referenced sense amp that is structured to calibrate its individual pre-charge based on a trip-point, with autonomous pre-charge activation circuitry that starts pre-charging a sense-line on each unique entry as soon as a sense has been performed or completed.