Multiband receivers for millimeter wave devices

    公开(公告)号:US11228325B2

    公开(公告)日:2022-01-18

    申请号:US16833663

    申请日:2020-03-30

    Abstract: We disclose multiband receivers for millimeter-wave devices, which may have reduced size and/or reduced power consumption. One multiband receiver comprises a first band path comprising a first passive mixer configured to receive a first input RF signal having a first frequency and to be driven by a first local oscillator signal having a frequency about ⅔ the first frequency; a second band path comprising a second passive mixer configured to receive a second input RF signal having a second frequency and to be driven by a second local oscillator signal having a frequency about ⅔ the second frequency; and a base band path comprising a third passive mixer configured to receive intermediate RF signals during a duty cycle and to be driven by a third local oscillator signal having a frequency about ⅓ the first frequency or about ⅓ the second frequency during the duty cycle.

    Multiband receivers for millimeter wave devices

    公开(公告)号:US10944437B2

    公开(公告)日:2021-03-09

    申请号:US15967281

    申请日:2018-04-30

    Abstract: We disclose multiband receivers for millimeter-wave devices, which may have reduced size and/or reduced power consumption. One multiband receiver comprises a first band path comprising a first passive mixer configured to receive a first input RF signal having a first frequency and to be driven by a first local oscillator signal having a frequency about ⅔ the first frequency; a second band path comprising a second passive mixer configured to receive a second input RF signal having a second frequency and to be driven by a second local oscillator signal having a frequency about ⅔ the second frequency; and a base band path comprising a third passive mixer configured to receive intermediate RF signals during a duty cycle and to be driven by a third local oscillator signal having a frequency about ⅓ the first frequency or about ⅓ the second frequency during the duty cycle.

    MULTIBAND RECEIVERS FOR MILLIMETER WAVE DEVICES

    公开(公告)号:US20220200636A1

    公开(公告)日:2022-06-23

    申请号:US17556624

    申请日:2021-12-20

    Abstract: We disclose multiband receivers for millimeter-wave devices, which may have reduced size and/or reduced power consumption. One multiband receiver comprises a first band path comprising a first passive mixer configured to receive a first input RF signal having a first frequency and to be driven by a first local oscillator signal having a frequency about ⅔ the first frequency; a second band path comprising a second passive mixer configured to receive a second input RF signal having a second frequency and to be driven by a second local oscillator signal having a frequency about ⅔ the second frequency; and a base band path comprising a third passive mixer configured to receive intermediate RF signals during a duty cycle and to be driven by a third local oscillator signal having a frequency about ⅓ the first frequency or about ⅓ the second frequency during the duty cycle.

    Circuit structure for adjusting PTAT current to compensate for process variations in device transistor

    公开(公告)号:US10747254B1

    公开(公告)日:2020-08-18

    申请号:US16558599

    申请日:2019-09-03

    Abstract: The disclosure provides a circuit structure including a current source including at least one FDSOI transistor having a back-gate terminal, wherein the current source generates a current proportionate to an absolute temperature of the circuit structure; a first current mirror electrically coupled to the current source and a gate terminal of a device transistor, wherein the first current mirror applies a gate bias to the device transistor based on a magnitude of the current, and wherein a source or drain terminal of the device transistor includes an output current of the circuit structure; and an adjustable voltage source coupled to the back-gate terminal of the at least one FDSOI transistor of the current source, wherein the adjustable voltage source applies a selected back-gate bias voltage to the back-gate terminal of the at least one FDSOI transistor to adjust the current to compensate for process variations of the device transistor.

    MULTIBAND RECEIVERS FOR MILLIMETER WAVE DEVICES

    公开(公告)号:US20190312603A1

    公开(公告)日:2019-10-10

    申请号:US15967281

    申请日:2018-04-30

    Abstract: We disclose multiband receivers for millimeter-wave devices, which may have reduced size and/or reduced power consumption. One multiband receiver comprises a first band path comprising a first passive mixer configured to receive a first input RF signal having a first frequency and to be driven by a first local oscillator signal having a frequency about ⅔ the first frequency; a second band path comprising a second passive mixer configured to receive a second input RF signal having a second frequency and to be driven by a second local oscillator signal having a frequency about ⅔ the second frequency; and a base band path comprising a third passive mixer configured to receive intermediate RF signals during a duty cycle and to be driven by a third local oscillator signal having a frequency about ⅓ the first frequency or about ⅓ the second frequency during the duty cycle.

    MULTIBAND RECEIVERS FOR MILLIMETER WAVE DEVICES

    公开(公告)号:US20200228149A1

    公开(公告)日:2020-07-16

    申请号:US16833663

    申请日:2020-03-30

    Abstract: We disclose multiband receivers for millimeter-wave devices, which may have reduced size and/or reduced power consumption. One multiband receiver comprises a first band path comprising a first passive mixer configured to receive a first input RF signal having a first frequency and to be driven by a first local oscillator signal having a frequency about ⅔ the first frequency; a second band path comprising a second passive mixer configured to receive a second input RF signal having a second frequency and to be driven by a second local oscillator signal having a frequency about ⅔ the second frequency; and a base band path comprising a third passive mixer configured to receive intermediate RF signals during a duty cycle and to be driven by a third local oscillator signal having a frequency about ⅓ the first frequency or about ⅓ the second frequency during the duty cycle.

    Amplifier circuit with single-ended input and differential outputs

    公开(公告)号:US09774302B1

    公开(公告)日:2017-09-26

    申请号:US15277344

    申请日:2016-09-27

    Abstract: Disclosed is an amplifier circuit having a single-ended input and differential outputs. The differential outputs are achieved using a first output branch and a second output branch, each including a common source FET (CS-FET) and a common gate FET (CG-FET) connected in series between ground and a corresponding out node connected to a load. An input signal is applied to the CS-FET in the first output branch and an intermediate signal at an intermediate node between the CS-FET and the CG-FET in the first output branch is applied to the CS-FET in the second output branch. The CG-FET in the first output branch and the CS-FET in the second output branch are equal in size such that their transconductances are approximately equal, such that currents in the two output branches are inverted and the outputs at the output nodes of the two output branches are differential outputs.

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