公开(公告)号：US20160163398A1

公开(公告)日：2016-06-09

申请号：US14680228

申请日：2015-04-07

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Akhilesh GAUTAM ,  Suresh UPPAL

IPC: G11C17/12 ,  H01L27/112

CPC classification number: G11C17/12 ,  G01R31/26 ,  H01L22/34 ,  H01L27/11206 ,  H01L29/205

Abstract: A method of forming an OTPROM capable of storing twice the number of bits as a conventional OTPROM without increasing the overall size of the device is provided. Embodiments include forming a OTPROM, the OTPROM array having a plurality of formed devices; receiving a binary code to program the OTPROM array; separating the binary code into a first part and a second part; programming each device with one of four data storage states by: forming a gate oxide layer of each device to a thickness corresponding to the first part of the binary code, and selectively applying a TDDB stress to the gate oxide layer corresponding to the second part of the binary code; detecting a Idsat level discharged by each device with a multi-bit sense amplifier; and reading the state of each device based on the detected Idsat level.

Abstract translation: 提供了一种形成能够存储两倍于常规OTPROM的位数的OTPROM的方法，而不增加设备的总体大小。 实施例包括形成OTPROM，OTPROM阵列具有多个形成的器件; 接收二进制代码来编程OTPROM阵列; 将二进制代码分离成第一部分和第二部分; 通过以下方式对每个器件进行编程：通过以下方式对每个器件进行编程：将每个器件的栅极氧化层形成为与二进制代码的第一部分对应的厚度，并且选择性地将TDDB应力施加到对应于第二部分的栅极氧化物层 二进制代码; 用多位读出放大器检测每个器件放电的Idsat电平; 并且基于检测到的Idsat级别读取每个设备的状态。