公开(公告)号：US20190013241A1

公开(公告)日：2019-01-10

申请号：US15641927

申请日：2017-07-05

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Ruilong Xie ,  Andre Labonte ,  Lars Liebmann ,  Daniel Chane ,  Chanro Park ,  Nigel Cave ,  Vimal Kamineni

IPC: H01L21/768 ,  H01L21/8234 ,  H01L21/285 ,  H01L21/311 ,  H01L27/088 ,  H01L29/08 ,  H01L23/535 ,  H01L29/06

Abstract: A method of manufacturing a semiconductor device is provided including forming raised source and drain regions on a semiconductor layer, forming a first insulating layer over the semiconductor layer, forming a first contact to one of the source and drain regions in the first insulating layer, forming a second insulating layer over the first contact, forming a trench in the second insulating layer to expose the first contact, removing a portion of the first contact below the trench, thereby forming a recessed surface of the first contact, removing a portion of the first insulating layer, thereby forming a recess in the trench and exposing a portion of a sidewall of the first contact below the recessed surface of the first contact, and filling the trench and the recess formed in the trench with a contact material to form a second contact in contact with the first contact.