公开(公告)号：US10361289B1

公开(公告)日：2019-07-23

申请号：US15933032

申请日：2018-03-22

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Wei Zhao ,  Shahab Siddiqui ,  Haiting Wang ,  Ting-Hsiang Hung ,  Yiheng Xu ,  Beth Baumert ,  Jinping Liu ,  Scott Beasor ,  Yue Zhong ,  Shesh Mani Pandey

IPC: H01L29/66 ,  H01L21/02 ,  H01L21/28 ,  H01L29/78

Abstract: A method of thermally oxidizing a Si fin to form an oxide layer over the Si fin and then forming an ALD oxide layer over the oxide layer and resulting device are provided. Embodiments include forming a plurality of Si fins on a Si substrate; forming a dielectric layer over the plurality of Si fins and the Si substrate; recessing the dielectric layer, exposing a top portion of the plurality of Si fins; thermally oxidizing surface of the top portion of the plurality of Si fins, an oxide layer formed; and forming an ALD oxide layer over the oxide layer.