公开(公告)号：US20240035898A1

公开(公告)日：2024-02-01

申请号：US17874709

申请日：2022-07-27

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Zhixing ZHAO ,  Yiching CHEN ,  Oscar D. RESTREPO

IPC: G01K7/18 ,  H01L29/66

CPC classification number: G01K7/186 ,  H01L29/66825 ,  H01L29/66795

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to built-in temperature sensors and methods of manufacture. The structure includes: at least one active gate structure; and a built-in temperature sensor adjacent to and on a same device level as the at least one active gate structure, the built-in temperature sensor further includes force lines and sensing lines.