公开(公告)号：US3872489A

公开(公告)日：1975-03-18

申请号：US33527373

申请日：1973-02-22

Applicant: GTE LABORATORIES INC

Inventor： HAGENLOCHER ARNO K

IPC: H01J1/308 ,  H01L3/08

CPC classification number: H01J1/308

Abstract: An electron emitter comprising a body of a wide band gap material using double injection space-charge limited current. By using double injection of carriers to establish space-charge limited currents in high resistivity p-type semiconductors, the number of minority carriers can be increased considerably without raising the Fermi level above mid band gap. By using such double injection space-charge limited current a sufficient amount of large energy minority carriers are placed in the conduction band in a p-type semiconductor. A monoatomic layer of cesium and oxygen is positioned on the positively biased contact. This places a negative electron affinity surface layer on the device. The electrons in the conduction band then have enough energy to impel electrons into a vacuum.

Abstract translation: 一种电子发射器，包括使用双注入空间电荷限制电流的宽带隙材料体。 通过使用双重注入载流子在高电阻率p型半导体中建立空间电荷限制电流，可以显着增加少数载流子的数量，而不会使费米能级高于中间带隙。 通过使用这种双注入空间电荷限制电流，在p型半导体中的导带中放置足够量的大能量少数载流子。 铯和氧的单原子层位于正偏压接触件上。 这在设备上放置负电子亲和性表面层。 导带中的电子然后具有足够的能量来推动电子进入真空。

公开(公告)号：US3637972A

公开(公告)日：1972-01-25

申请号：US3637972D

申请日：1970-04-01

Applicant: GTE LABORATORIES INC

Inventor： HAGENLOCHER ARNO K

IPC: H01L21/00 ,  H01R43/02 ,  B23K11/02

CPC classification number: H01L21/67138 ,  H01R43/02

Abstract: A method of forming an ohmic contact between a conductor and a silicon substrate having a resistivity greater than 5 ohm-cm. by etching the substrate, heating it in an atmosphere of inert gas, pressing the conductor into contact with the substrate, and allowing sufficient current to flow through the conductor and the substrate to form the contact.

Abstract translation: 在导体和电阻率大于5欧姆 - 厘米的硅衬底之间形成欧姆接触的方法。 通过蚀刻基板，在惰性气体气氛中加热，将导体按压与基板接触，并允许足够的电流流过导体和基板以形成接触。