Patent search ap:("GlobalFoundries U.S. Inc.") AND inv:"Nicki N. Mika" Page 1

1.

发明授权
Non-volatile memory device with reference voltage circuit including column(s) of reference bit cells adjacent columns of memory bit cells within a memory cell array 有权

公开(公告)号：US12205633B2

公开(公告)日：2025-01-21

申请号：US17806792

申请日：2022-06-14

Applicant: GlobalFoundries U.S. Inc.

Inventor： Venkatesh P. Gopinath , Xiaoli Hu , Thomas Melde , Nicki N. Mika

IPC: G11C11/4099 , G11C11/4091 , G11C11/4094 , G11C11/4097 , G11C11/56

Abstract: Structures herein include an array of non-volatile memory cells. The non-volatile memory cells include memory bit cells and at least one reference bit cell that is adjacent the memory bit cells. These structures also include at least one reference voltage regulator connected to the reference bit cell, and at least one sense amplifier connected to the memory bit cells and the reference voltage regulator.

2.

发明公开
NON-VOLATILE MEMORY DEVICE WITH REFERENCE VOLTAGE CIRCUIT 审中-公开

公开(公告)号：US20230402091A1

公开(公告)日：2023-12-14

申请号：US17806792

申请日：2022-06-14

Applicant: GlobalFoundries U.S. Inc.

Inventor： Venkatesh P. Gopinath , Xiaoli Hu , Thomas Melde , Nicki N. Mika

IPC: G11C11/4099 , G11C11/4091 , G11C11/4094 , G11C11/4097 , G11C11/56

CPC classification number: G11C11/4099 , G11C11/4091 , G11C11/4094 , G11C11/4097 , G11C11/5635

Abstract: Structures herein include an array of non-volatile memory cells. The non-volatile memory cells include memory bit cells and at least one reference bit cell that is adjacent the memory bit cells. These structures also include at least one reference voltage regulator connected to the reference bit cell, and at least one sense amplifier connected to the memory bit cells and the reference voltage regulator.

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