公开(公告)号：US20230143711A1

公开(公告)日：2023-05-11

申请号：US17914836

申请日：2021-03-25

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Atsushi SUGIYAMA ,  Yuji KANEKO ,  Yasufumi TAKAGI

IPC: H01S5/34 ,  H01S5/227 ,  H01S5/0234

CPC classification number: H01S5/3401 ,  H01S5/2275 ,  H01S5/0234

Abstract: A method for manufacturing a quantum cascade laser element includes: a step of forming a semiconductor layer on a first major surface of a semiconductor wafer; a step of removing a part of the semiconductor layer by etching such that each of portions of the semiconductor layer includes a ridge portion; a step of forming an insulating layer such that at least a part of a surface of the ridge portion is exposed; a step of embedding the ridge portion in each of metal plating layers; a step of flattening a surface of the metal plating layers by polishing in a state where a protective member is disposed; a step of forming an electrode layer on a second major surface of the semiconductor wafer; and a step of cleaving the semiconductor wafer and the semiconductor layer in a state where the protective member is removed.

公开(公告)号：US20230148134A1

公开(公告)日：2023-05-11

申请号：US17914552

申请日：2021-03-25

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Atsushi SUGIYAMA ,  Yuji KANEKO ,  Kazuma TANIMURA

IPC: H01S5/34 ,  H01S5/22

CPC classification number: H01S5/3401 ,  H01S5/2202

Abstract: A quantum-cascade laser element includes: a semiconductor substrate; a semiconductor mesa formed on the semiconductor substrate to include an active layer having a quantum-cascade structure and to extend along a light waveguide direction; an embedding layer formed to interpose the semiconductor mesa along a width direction of the semiconductor substrate; a cladding layer formed at least on the semiconductor mesa; and a metal layer formed at least on the cladding layer. A thickness of the cladding layer is thinner in a second region located outside a first region in the width direction of the semiconductor substrate than in the first region of which at least a part overlaps the semiconductor mesa when viewed in a thickness direction of the semiconductor substrate. The metal layer extends over the first region and the second region.