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公开(公告)号:US09538316B2
公开(公告)日:2017-01-03
申请号:US14740939
申请日:2015-06-16
Inventor: Yu-Chi Chiao , Hsu-Ho Wu , Tien-Rong Lu
IPC: H04B5/00 , H04W4/00 , G06F3/01 , G06F3/0488 , H04B1/20 , G06F3/0486 , G06F3/0484
CPC classification number: H04W4/80 , G06F3/013 , G06F3/04842 , G06F3/0486 , G06F3/0488 , G06F2203/0381 , G06F2203/04808 , H04B1/202 , H04B5/0031 , H04B5/0037
Abstract: A smart monitor system includes a hand-held electronic device and a monitor. The hand-held electronic device includes a panel, a control unit, a touch-sensing cover and a wireless communication unit. The touch-sensing cover has a cover and a touch-sensing structure. The cover is disposed on the side of the hand-held electronic device opposite the panel. Partial or total area of the touch-sensing structure is disposed on the cover. The touch-sensing structure is electrically connected to the control unit. The wireless communication unit has a wireless communication chip and an antenna. The wireless communication chip is electrically connected to the control unit, and the antenna is disposed on the touch-sensing cover. The smart monitor system can communicate with and controls the monitor through the hand-held electronic device for various application.
Abstract translation: 智能监控系统包括手持电子设备和监视器。 手持电子装置包括面板,控制单元,触摸感测盖和无线通信单元。 触摸感测盖具有盖和触摸感测结构。 盖子设置在与面板相对的手持电子装置的一侧。 触摸感测结构的部分或全部区域设置在盖上。 触摸感测结构电连接到控制单元。 无线通信单元具有无线通信芯片和天线。 无线通信芯片电连接到控制单元,并且天线设置在触摸感测盖上。 智能监控系统可以通过手持式电子设备进行通信和监控,以进行各种应用。
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公开(公告)号:US20240145653A1
公开(公告)日:2024-05-02
申请号:US18196453
申请日:2023-05-12
Applicant: HANNSTAR DISPLAY CORPORATION
Inventor: Chun-I Chu , Yu-Chi Chiao , Yung-Li Huang , Hung-Ming Chang , Cheng-Yu Lin , Huan-Hsun Hsieh , CHeng-Pei Huang
IPC: H01L33/62 , H01L25/075 , H01L33/44 , H01L33/50
CPC classification number: H01L33/62 , H01L25/0753 , H01L33/44 , H01L33/505 , H01L2933/0025 , H01L2933/0041 , H01L2933/0066
Abstract: A manufacturing method of a display device includes forming light emitting components on a first substrate, the light emitting components include a first side and a second side, and the second side is away from the first substrate; forming a circuit layer on the first substrate and on the second side of the light emitting components; forming a first protective layer on the circuit layer and forming an insulating layer on the first protective layer; removing the first substrate after forming a second substrate on the insulating layer; forming a black matrix layer on the first side of the light emitting components, and the black matrix layer includes openings; forming light conversion layers in the openings of the black matrix layer; forming a second protective layer on the black matrix layer and the light conversion layers; and forming a third substrate on the second protective layer.
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公开(公告)号:US20230162975A1
公开(公告)日:2023-05-25
申请号:US17970610
申请日:2022-10-21
Applicant: HannStar Display Corporation
Inventor: Yu-Chi Chiao , Yung-Li Huang , Chun I Chu , Sheng Wei Chou
IPC: H01L21/02
CPC classification number: H01L21/02458 , H01L21/0254
Abstract: The disclosure provides a manufacturing method of a nitride semiconductor structure. The method includes the followings. Multiple island structures separated from each other are formed on a sapphire substrate. A GaN layer is formed on the island structures. A silicon substrate is bonded to a surface of the GaN layer facing away from the sapphire substrate. The sapphire substrate, the island structures, and a first sublayer of the GaN layer are removed. The first sublayer of the GaN layer has multiple voids, and the voids are located between the island structures.
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