Smart monitor system and hand-held electronic device
    1.
    发明授权
    Smart monitor system and hand-held electronic device 有权
    智能监控系统和手持电子设备

    公开(公告)号:US09538316B2

    公开(公告)日:2017-01-03

    申请号:US14740939

    申请日:2015-06-16

    Abstract: A smart monitor system includes a hand-held electronic device and a monitor. The hand-held electronic device includes a panel, a control unit, a touch-sensing cover and a wireless communication unit. The touch-sensing cover has a cover and a touch-sensing structure. The cover is disposed on the side of the hand-held electronic device opposite the panel. Partial or total area of the touch-sensing structure is disposed on the cover. The touch-sensing structure is electrically connected to the control unit. The wireless communication unit has a wireless communication chip and an antenna. The wireless communication chip is electrically connected to the control unit, and the antenna is disposed on the touch-sensing cover. The smart monitor system can communicate with and controls the monitor through the hand-held electronic device for various application.

    Abstract translation: 智能监控系统包括手持电子设备和监视器。 手持电子装置包括面板,控制单元,触摸感测盖和无线通信单元。 触摸感测盖具有盖和触摸感测结构。 盖子设置在与面板相对的手持电子装置的一侧。 触摸感测结构的部分或全部区域设置在盖上。 触摸感测结构电连接到控制单元。 无线通信单元具有无线通信芯片和天线。 无线通信芯片电连接到控制单元,并且天线设置在触摸感测盖上。 智能监控系统可以通过手持式电子设备进行通信和监控,以进行各种应用。

    MANUFACTURING METHOD OF NITRIDE SEMICONDUCTOR STRUCTURE

    公开(公告)号:US20230162975A1

    公开(公告)日:2023-05-25

    申请号:US17970610

    申请日:2022-10-21

    CPC classification number: H01L21/02458 H01L21/0254

    Abstract: The disclosure provides a manufacturing method of a nitride semiconductor structure. The method includes the followings. Multiple island structures separated from each other are formed on a sapphire substrate. A GaN layer is formed on the island structures. A silicon substrate is bonded to a surface of the GaN layer facing away from the sapphire substrate. The sapphire substrate, the island structures, and a first sublayer of the GaN layer are removed. The first sublayer of the GaN layer has multiple voids, and the voids are located between the island structures.

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