公开(公告)号：US20200002808A1

公开(公告)日：2020-01-02

申请号：US16473288

申请日：2017-12-27

Applicant: HANWHA CHEMICAL CORPORATION

Inventor： Hee Dong LEE ,  Ji Ho KIM ,  Sung Eun PARK ,  Hyo Jin JEON

IPC: C23C16/24 ,  C23C16/455 ,  C01B33/035

Abstract: A polysilicon manufacturing apparatus according to an exemplary embodiment of the present invention includes: a reactor in which a reactive gas is introduced to perform a polysilicon manufacturing process by a chemical vapor deposition (CVD) method; and a slit-type nozzle installed at the reactor and spraying a gas inside the reactor to prevent absorption of silicon particles during a process.