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公开(公告)号：US20180223432A1
公开(公告)日：2018-08-09
申请号：US15750260
申请日：2016-08-26
Applicant: HANWHA CHEMICAL CORPORATION
Inventor： Sung Eun PARK , Hee Dong LEE , Jiwoong KIM
CPC classification number: C23C16/466 , B01J4/002 , B01J19/24 , B01J2208/00318 , C01B33/035 , C23C16/24
Abstract: The present invention provides a polysilicon manufacturing apparatus that can prevent generation of popcorns in the entire CVD reaction process by cooling an upper portion of a silicon rod where a rod bridge is disposed. A polysilicon manufacturing apparatus according to an exemplary embodiment of the present invention includes: a reactor provided on a base and forming a reaction chamber; a pair of feedthroughs provided in the base and extending into the reaction chamber; rod filaments provided in the feedthroughs in the reaction chamber, connected with each other at upper ends thereof through a rod bridge, and where a silicon rod of polysilicon is formed from a raw material gas through a chemical vapor deposition (CVD) process; and cooling spray nozzles spraying a cooling gas to the silicon rod formed as silicon deposited around the rod bridge and the rod filaments.
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公开(公告)号：US20200002808A1
公开(公告)日：2020-01-02
申请号：US16473288
申请日：2017-12-27
Applicant: HANWHA CHEMICAL CORPORATION
Inventor： Hee Dong LEE , Ji Ho KIM , Sung Eun PARK , Hyo Jin JEON
IPC: C23C16/24 , C23C16/455 , C01B33/035
Abstract: A polysilicon manufacturing apparatus according to an exemplary embodiment of the present invention includes: a reactor in which a reactive gas is introduced to perform a polysilicon manufacturing process by a chemical vapor deposition (CVD) method; and a slit-type nozzle installed at the reactor and spraying a gas inside the reactor to prevent absorption of silicon particles during a process.
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公开(公告)号：US20160280556A1
公开(公告)日：2016-09-29
申请号：US15038146
申请日：2014-11-19
Applicant: HANWHA CHEMICAL CORPORATION
Inventor： Kyu Hak PARK , Sung Eun PARK , Jea Sung PARK , Hee Dong LEE
IPC: C01B33/035
CPC classification number: C01B33/035 , B01J19/087 , B01J2219/0809 , B01J2219/0815 , B01J2219/0828 , B01J2219/0837
Abstract: An apparatus for manufacturing polysilicon using a chemical vapor deposition (CVD) reactor is provided. The apparatus for manufacturing polysilicon includes: a reaction chamber including a substrate and a reactor cover; at least a pair of electrodes installed through the substrate by an insulating member and connected with a power supply; at least a pair of filaments which are coupled with the pair of electrodes by an electrode chuck and of which upper ends are connected to each other; and a cover assembly including an electrode cover surrounding an upper surface and a side of each of the pair of electrodes on the substrate and a cover shield covering the upper surface of the electrode cover.
Abstract translation: 提供了一种使用化学气相沉积（CVD）反应器制造多晶硅的设备。 多晶硅制造装置包括：反应室，包括基板和反应器盖; 至少一对电极，其通过绝缘构件安装在基板上并与电源连接; 至少一对灯丝，其通过电极卡盘与所述一对电极耦合，并且其上端彼此连接; 以及盖组件，其包括围绕所述基板上的所述一对电极的每一个的上表面和侧面的电极盖和覆盖所述电极盖的上表面的盖屏蔽。
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公开(公告)号：US20180229203A1
公开(公告)日：2018-08-16
申请号：US15750251
申请日：2016-09-08
Applicant: HANWHA CHEMICAL CORPORATION
Inventor： Sung Eun PARK , Jiwoong KIM , Hee Dong LEE
CPC classification number: B01J19/0013 , B01J19/0053 , B01J19/08 , C01B33/035 , C23C16/24 , C23C16/4418 , C23C16/46
Abstract: Provided is a polysilicon manufacturing apparatus including a reactor disposed on a base plate to form a reaction chamber, a pair of electrical feedthroughs installed on the base plate to be extended to the inside of the reaction chamber, rod filaments installed on the electrical feedthroughs in the reaction chamber and connected to each other by a rod bridge at the upper end to form a silicon rod by chemical vapor deposition of source gas introduced to a gas inlet, and a cooling jacket inserted to a through-hole provided at the upper side of the reactor to be supported to the base plate, connected to a gas outlet formed on the base plate by forming a gas passage discharging the gas after reaction, and introducing and circulating a low-temperature coolant to a coolant passage from the outside of the reactor by forming the coolant passage at the outside of the gas passage to discharge a high-temperature coolant to the outside of the reactor.
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