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公开(公告)号:US10176043B2
公开(公告)日:2019-01-08
申请号:US15314902
申请日:2014-07-01
Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP
Inventor: Gregg B. Lesartre , Chris Michael Brueggen , Lidia Warnes
Abstract: Example implementations relate to a memory controller. For example, an apparatus includes a data storage device and a memory controller coupled to the data storage device. The memory controller is to perform, during a memory scrubbing operation, a corrective action to correct an error associated with a data block stored in the data storage device. The memory control is to determine, during the memory scrubbing operation, whether the corrective action is successful. In response to a determination that the corrective action is a failed corrective action, the memory controller is to fix a hardware failure of the data storage device based on a type of the hardware failure.
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公开(公告)号:US20180219560A1
公开(公告)日:2018-08-02
申请号:US15417431
申请日:2017-01-27
Applicant: Hewlett Packard Enterprise Development LP
Inventor: Chris Michael Brueggen , Ron M. Roth
CPC classification number: H03M13/153 , H03M13/1515 , H03M13/1565 , H03M13/158 , H03M13/6502
Abstract: Examples disclosed herein relate to very large-scale integration (VLSI) circuit implementations of list decode circuits. In accordance with some examples disclosed herein, a device may include a first and second polynomial evaluation circuit, a field division circuit, a discrepancy filter, and an enhanced error locator polynomial (ELP) circuit. The first and second polynomial evaluation circuits may respectively evaluate a first and second polynomial output from a Berlekamp-Massey algorithm over a plurality of values in a finite field. The field division circuit may divide the outputs from the evaluations to generate a plurality of speculative discrepancy values for an additional iteration of the Berlekamp-Massey algorithm. The discrepancy filter circuit may filter the speculative discrepancy values down to a list of potentially valid discrepancy values that may be used by the enhanced ELP circuit to generate an enhanced ELP.
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公开(公告)号:US10735030B2
公开(公告)日:2020-08-04
申请号:US15670802
申请日:2017-08-07
Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP
Inventor: Gregg B. Lesartre , Harvey Ray , Kevin L. Miller , Chris Michael Brueggen , Martin Foltin
Abstract: A technique includes determining that a given memory device of a plurality of memory devices has failed and in response to the determination that the given memory device has failed, re-encoding a data unit associated with the given memory device. The data unit is associated with a payload and a symbol-based error correction code. The re-encoding includes determining a bit-based error correction code for the payload and replacing the data unit in the memory with the payload and the bit-based error correction code.
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公开(公告)号:US10275307B2
公开(公告)日:2019-04-30
申请号:US15454813
申请日:2017-03-09
Applicant: Hewlett Packard Enterprise Development LP
Inventor: Gregg B. Lesartre , Craig Warner , Martin Foltin , Chris Michael Brueggen
Abstract: A method is provided. In an example, the method includes identifying a memory module that includes a plurality of memory dies. Each memory die of the plurality of memory dies includes a plurality of memory regions, and each memory die of the plurality of memory dies services a respective portion of a data access. An error pattern is detected in a first memory region of the plurality of memory regions. The first memory region is associated with a first memory die of the plurality of memory dies. Based on the detected error pattern, the first memory region of the first memory die is marked as erased without marking a second memory region of the first memory die as erased.
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公开(公告)号:US20180260273A1
公开(公告)日:2018-09-13
申请号:US15454813
申请日:2017-03-09
Applicant: Hewlett Packard Enterprise Development LP
Inventor: Gregg B. Lesartre , Craig Warner , Martin Foltin , Chris Michael Brueggen
CPC classification number: G11C29/52 , G06F11/1048 , G11C2029/0401 , G11C2029/0409
Abstract: A method is provided. In an example, the method includes identifying a memory module that includes a plurality of memory dies. Each memory die of the plurality of memory dies includes a plurality of memory regions, and each memory die of the plurality of memory dies services a respective portion of a data access. An error pattern is detected in a first memory region of the plurality of memory regions. The first memory region is associated with a first memory die of the plurality of memory dies. Based on the detected error pattern, the first memory region of the first memory die is marked as erased without marking a second memory region of the first memory die as erased.
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公开(公告)号:US20190044546A1
公开(公告)日:2019-02-07
申请号:US15670802
申请日:2017-08-07
Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP
Inventor: Gregg B. Lesartre , Harvey Ray , Kevin L. Miller , Chris Michael Brueggen , Martin Foltin
Abstract: A technique includes determining that a given memory device of a plurality of memory devices has failed and in response to the determination that the given memory device has failed, re-encoding a data unit associated with the given memory device. The data unit is associated with a payload and a symbol-based error correction code. The re-encoding includes determining a bit-based error correction code for the payload and replacing the data unit in the memory with the payload and the bit-based error correction code.
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公开(公告)号:US20180276068A1
公开(公告)日:2018-09-27
申请号:US15468619
申请日:2017-03-24
Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP
Inventor: Gregg B. Lesartre , Craig Warner , Martin Foltin , Chris Michael Brueggen , Brian S. Birk , Harvey Ray
CPC classification number: H03M13/2906 , G06F11/1048 , G11C29/52 , G11C2029/0409 , G11C2029/0411
Abstract: In one example in accordance with the present disclosure, a system comprises a plurality of memory dies, a first region of memory allocated for primary ECC spread across a first subset of at least one memory die belonging to the plurality of memory die, wherein a portion of the primary ECC is allocated to each data block and a second region of memory allocated for secondary ECC spread across a second subset of at least one memory die included in the plurality of memory die. The system also comprises a memory controller configured to determine that an error within the first data block cannot be corrected using a first portion of the primary ECC allocated to the first data block, access the second region allocated for secondary ECC stored on the at least one memory die belonging to the plurality of memory die and attempt to correct the error using the primary and secondary ECC.
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公开(公告)号:US20180212625A1
公开(公告)日:2018-07-26
申请号:US15416395
申请日:2017-01-26
Applicant: Hewlett Packard Enterprise Development LP
Inventor: Chris Michael Brueggen
CPC classification number: H03M13/153 , H03M13/1515 , H03M13/154 , H03M13/3707 , H03M13/3723 , H03M13/373 , H03M13/3746 , H03M13/6508 , H03M13/6561
Abstract: Examples disclosed herein relate to very large-scale integration (VLSI) circuit implementations of list decode circuits. In accordance with some examples disclosed herein, a list decode circuit may include a syndrome calculation circuit, a symbol erasure circuit, an erasure syndrome calculation circuit and a Berlekamp-Massey algorithm circuit (BMA), and an error locator polynomial (ELP) evaluation circuit. The syndrome calculation circuit may calculate a baseline syndrome and erasure syndrome calculation circuit may calculate erasure syndromes from error locator polynomials calculated by the symbol erasure circuit. The BMA circuit may use the calculated syndromes to generate a series of ELPs, which may be used by the ELP evaluation circuit to identify error locations in a codeword.
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公开(公告)号:US10567003B2
公开(公告)日:2020-02-18
申请号:US15416395
申请日:2017-01-26
Applicant: Hewlett Packard Enterprise Development LP
Inventor: Chris Michael Brueggen
Abstract: Examples disclosed herein relate to very large-scale integration (VLSI) circuit implementations of list decode circuits. In accordance with some examples disclosed herein, a list decode circuit may include a syndrome calculation circuit, a symbol erasure circuit, an erasure syndrome calculation circuit and a Berlekamp-Massey algorithm circuit (BMA), and an error locator polynomial (ELP) evaluation circuit. The syndrome calculation circuit may calculate a baseline syndrome and erasure syndrome calculation circuit may calculate erasure syndromes from error locator polynomials calculated by the symbol erasure circuit. The BMA circuit may use the calculated syndromes to generate a series of ELPs, which may be used by the ELP evaluation circuit to identify error locations in a codeword.
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公开(公告)号:US10402287B2
公开(公告)日:2019-09-03
申请号:US15500064
申请日:2015-01-30
Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP
Inventor: Derek Alan Sherlock , Harvey Ray , Chris Michael Brueggen
Abstract: According to an example, data corruption and single point of failure is prevented in a fault-tolerant memory fabric with multiple redundancy controllers by granting, by a parity media controller, a lock of a stripe to a redundancy controller to perform a sequence on the stripe. The lock may be broken in response to determining a failure of the redundancy controller prior to completing the sequence. In response to breaking the lock, the parity cacheline of the stripe may be flagged as invalid. Also, a journal may be updated to document the breaking of the lock.
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