公开(公告)号：US20160013403A1

公开(公告)日：2016-01-14

申请号：US14862987

申请日：2015-09-23

Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.

Inventor： Alexandre M. Bratkovski ,  Jianhua Yang ,  Shih-Yuan Wang ,  Michael Josef Stuke

IPC: H01L45/00 ,  H01L27/24

CPC classification number: H01L45/1273 ,  G11C13/0007 ,  G11C16/02 ,  G11C2213/19 ,  G11C2213/52 ,  H01L27/2463 ,  H01L27/2472 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/1246 ,  H01L45/146 ,  H01L45/147 ,  H01L45/148

Abstract: Embodiments of the present invention are directed to nanoscale memristor devices that provide nonvolatile memristive switching. In one embodiment, a memristor device comprises an active region, a first electrode disposed on a first surface of the active region, and a second electrode disposed on a second surface of the active region, the second surface opposite the first surface. The first electrode is configured with a larger width than the active region in a first direction, and the second electrode is configured with a larger width than the active region in a second direction. Application of a voltage to at least one of the electrodes produces an electric field across a sub-region within the active region between the first electrode and the second electrode.

Abstract translation: 本发明的实施例涉及提供非易失性忆阻转换的纳米级忆阻器装置。 在一个实施例中，忆阻器装置包括有源区，设置在有源区的第一表面上的第一电极和设置在有源区的第二表面上的第二电极，第二表面与第一表面相对。 第一电极被构造成在第一方向上具有比有效区域更大的宽度，并且第二电极被配置为在第二方向上具有比有效区域更大的宽度。 向至少一个电极施加电压产生穿过第一电极和第二电极之间的有源区域内的子区域的电场。