Method for making a chemical contrast pattern using block copolymers and sequential infiltration synthesis
    1.
    发明授权
    Method for making a chemical contrast pattern using block copolymers and sequential infiltration synthesis 有权
    使用嵌段共聚物和顺序渗透合成制造化学对比图案的方法

    公开(公告)号:US08900467B1

    公开(公告)日:2014-12-02

    申请号:US13902795

    申请日:2013-05-25

    CPC classification number: C08J7/02 G03F7/0002

    Abstract: A method for making a chemical contrast pattern uses directed self-assembly of block copolymers (BCPs) and sequential infiltration synthesis (SIS) of an inorganic material. For an example with poly(styrene-block-methyl methacrylate) (PS-b-PMMA) as the BCP and alumina as the inorganic material, the PS and PMMA self-assemble on a suitable substrate. The PMMA is removed and the PS is oxidized. A surface modification polymer (SMP) is deposited on the oxidized PS and the exposed substrate and the SMP not bound to the substrate is removed. The structure is placed in an atomic layer deposition chamber. Alumina precursors reactive with the oxidized PS are introduced and infuse by SIS into the oxidized PS, thereby forming on the substrate a chemical contrast pattern of SMP and alumina. The resulting chemical contrast pattern can be used for lithographic masks, for example to etch the underlying substrate to make an imprint template.

    Abstract translation: 用于制造化学对比图案的方法使用无定形嵌段共聚物(BCP)和顺序渗透合成(SIS)的无定形自组装。 对于作为BCP的聚(苯乙烯 - 嵌段 - 甲基丙烯酸甲酯)(PS-b-PMMA)和作为无机材料的氧化铝的实例,PS和PMMA自组装在合适的基材上。 去除PMMA并且PS被氧化。 将表面改性聚合物(SMP)沉积在氧化的PS和暴露的基底上,并且除去未结合到基底的SMP。 将该结构放置在原子层沉积室中。 与氧化的PS反应的氧化铝前体被引入并通过SIS注入到氧化的PS中,从而在衬底上形成SMP和氧化铝的化学对比图。 所得到的化学对比度图案可以用于光刻掩模,例如蚀刻下面的衬底以形成压印模板。

    SOLVENT ANNEALING OF BLOCK COPOLYMER FILMS UNDER SUPER-SATURATED ATMOSPHERES
    2.
    发明申请
    SOLVENT ANNEALING OF BLOCK COPOLYMER FILMS UNDER SUPER-SATURATED ATMOSPHERES 审中-公开
    在超饱和气氛下的溶胶退火嵌段共聚物薄膜

    公开(公告)号:US20150239184A1

    公开(公告)日:2015-08-27

    申请号:US14187071

    申请日:2014-02-21

    Abstract: In one embodiment, a system for solvent annealing of a block copolymer film includes a solvent annealing chamber, and a controller configured to control at least one processing parameter for inducing a super-saturation of a solvent in an atmosphere within the solvent annealing chamber. In another embodiment, a method for solvent annealing of a block copolymer film includes inducing a super-saturation of a solvent in an atmosphere within a solvent annealing chamber having a block copolymer film therein for inducing formation of polymeric domains.

    Abstract translation: 在一个实施方案中,用于嵌段共聚物膜的溶剂退火的系统包括溶剂退火室和被配置为控制至少一个处理参数以用于在溶剂退火室内的气氛中诱导溶剂的过饱和的控制器。 在另一个实施方案中,用于嵌段共聚物膜的溶剂退火的方法包括在其内具有嵌段共聚物膜的溶剂退火室内的气氛中诱导溶剂的过度饱和以引起聚合物区域的形成。

    METHOD FOR MAKING A CHEMICAL CONTRAST PATTERN USING BLOCK COPOLYMERS AND SEQUENTIAL INFILTRATION SYNTHESIS
    3.
    发明申请
    METHOD FOR MAKING A CHEMICAL CONTRAST PATTERN USING BLOCK COPOLYMERS AND SEQUENTIAL INFILTRATION SYNTHESIS 有权
    使用嵌段共聚物制备化学对比图案的方法和顺序浸润合成

    公开(公告)号:US20140346142A1

    公开(公告)日:2014-11-27

    申请号:US13902795

    申请日:2013-05-25

    CPC classification number: C08J7/02 G03F7/0002

    Abstract: A method for making a chemical contrast pattern uses directed self-assembly of block copolymers (BCPs) and sequential infiltration synthesis (SIS) of an inorganic material. For an example with poly(styrene-block-methyl methacrylate) (PS-b-PMMA) as the BCP and alumina as the inorganic material, the PS and PMMA self-assemble on a suitable substrate. The PMMA is removed and the PS is oxidized. A surface modification polymer (SMP) is deposited on the oxidized PS and the exposed substrate and the SMP not bound to the substrate is removed. The structure is placed in an atomic layer deposition chamber. Alumina precursors reactive with the oxidized PS are introduced and infuse by SIS into the oxidized PS, thereby forming on the substrate a chemical contrast pattern of SMP and alumina. The resulting chemical contrast pattern can be used for lithographic masks, for example to etch the underlying substrate to make an imprint template.

    Abstract translation: 用于制造化学对比图案的方法使用无定形嵌段共聚物(BCP)和顺序渗透合成(SIS)的无定形自组装。 对于作为BCP的聚(苯乙烯 - 嵌段 - 甲基丙烯酸甲酯)(PS-b-PMMA)和作为无机材料的氧化铝的实例,PS和PMMA自组装在合适的基材上。 去除PMMA并且PS被氧化。 将表面改性聚合物(SMP)沉积在氧化的PS和暴露的基底上,并且除去未结合到基底的SMP。 将该结构放置在原子层沉积室中。 与氧化的PS反应的氧化铝前体被引入并通过SIS注入到氧化的PS中,从而在衬底上形成SMP和氧化铝的化学对比图。 所得到的化学对比度图案可以用于光刻掩模,例如蚀刻下面的衬底以形成压印模板。

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