公开(公告)号：US20240377719A1

公开(公告)日：2024-11-14

申请号：US18692007

申请日：2022-09-22

Applicant: HOYA CORPORATION

Inventor： Teiichiro UMEZAWA ,  Yohei IKEBE

IPC: G03F1/24 ,  G03F1/48 ,  G03F1/54

Abstract: Provided is a substrate with a multilayer reflective film comprising a multilayer reflective film having a shallow effective reflective surface and capable of suppressing a phenomenon that atoms to be a material are diffused between a low refractive index layer and a high refractive index layer.
A substrate with a multilayer reflective film comprises a substrate and a multilayer reflective film formed on the substrate, in which the multilayer reflective film comprises a multilayer film in which a low refractive index layer and a high refractive index layer comprising silicon (Si) are alternately layered, the multilayer reflective film further comprises at least one intermediate layer disposed between the low refractive index layer and the high refractive index layer, the multilayer reflective film comprises at least one additive element selected from nitrogen (N), carbon (C), and oxygen (O), and the content of the additive element in the multilayer reflective film is 40 atom % or less.

公开(公告)号：US20240231214A9

公开(公告)日：2024-07-11

申请号：US18277648

申请日：2022-02-22

Applicant: HOYA CORPORATION

Inventor： Teiichiro UMEZAWA ,  Kota SUZUKI

IPC: G03F1/24 ,  G03F1/48

CPC classification number: G03F1/24 ,  G03F1/48

Abstract: Provided are a substrate with a multilayer reflective film, a reflective mask blank, a reflective mask, and a method for manufacturing a semiconductor device capable of, for example, preventing reduction of a reflectance of a multilayer reflective film due to formation of a silicide in a protective film.
A substrate with a multilayer reflective film 100 comprises a substrate 10, a multilayer reflective film 12 disposed on the substrate 10, and a protective film 18 disposed on the multilayer reflective film 12. The protective film 18 comprises a SiN material layer comprising silicon (Si) and nitrogen (N) or a SiC material layer comprising silicon (Si) and carbon (C) on a side in contact with the multilayer reflective film 12. The SiN material layer or the SiC material layer comprises an oxide of at least one metal selected from magnesium (Mg), aluminum (Al), titanium (Ti), yttrium (Y), and zirconium (Zr).

公开(公告)号：US20240134265A1

公开(公告)日：2024-04-25

申请号：US18277648

申请日：2022-02-22

Applicant: HOYA CORPORATION

Inventor： Teiichiro UMEZAWA ,  Kota SUZUKI

IPC: G03F1/24 ,  G03F1/48

CPC classification number: G03F1/24 ,  G03F1/48

Abstract: Provided are a substrate with a multilayer reflective film, a reflective mask blank, a reflective mask, and a method for manufacturing a semiconductor device capable of, for example, preventing reduction of a reflectance of a multilayer reflective film due to formation of a silicide in a protective film.
A substrate with a multilayer reflective film 100 comprises a substrate 10, a multilayer reflective film 12 disposed on the substrate 10, and a protective film 18 disposed on the multilayer reflective film 12. The protective film 18 comprises a SiN material layer comprising silicon (Si) and nitrogen (N) or a SiC material layer comprising silicon (Si) and carbon (C) on a side in contact with the multilayer reflective film 12. The SiN material layer or the SiC material layer comprises an oxide of at least one metal selected from magnesium (Mg), aluminum (Al), titanium (Ti), yttrium (Y), and zirconium (Zr).

公开(公告)号：US20170003583A1

公开(公告)日：2017-01-05

申请号：US15268818

申请日：2016-09-19

Applicant: HOYA CORPORATION

Inventor： Teiichiro UMEZAWA ,  Masafumi Ishiyama

IPC: G03F1/32

CPC classification number: G03F1/32 ,  C23C14/0036 ,  C23C14/0676 ,  C23C14/225 ,  G03F1/26

Abstract: Provided is a mask blank in which a thin film for transfer pattern formation is provided on a main surface of a transparent substrate. The thin film is made of a material containing a transition metal and silicon and further containing at least one of oxygen and nitrogen. The thin film has as its surface layer an oxide layer with an oxygen content higher than that of the thin film of a region other than the surface layer. The thin film is formed so that the thickness of its outer peripheral portion is greater than that of its central portion on the main surface side. The oxide layer is formed so that the thickness of its outer peripheral portion is greater than that of its central portion on the main surface side.

Abstract translation: 提供了在透明基板的主表面上设置用于转印图案形成用薄膜的掩模坯料。 薄膜由含有过渡金属和硅的材料制成，并进一步含有氧和氮中的至少一种。 该薄膜的表面层具有氧含量高于表面层以外的区域的薄膜的氧化层。 该薄膜形成为使得其外周部的厚度大于其主表面侧的中央部的厚度。 形成氧化物层，使得其外周部的厚度大于其主表面侧的中心部的厚度。