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公开(公告)号：US20240134265A1
公开(公告)日：2024-04-25
申请号：US18277648
申请日：2022-02-22
Applicant: HOYA CORPORATION
Inventor： Teiichiro UMEZAWA , Kota SUZUKI
Abstract: Provided are a substrate with a multilayer reflective film, a reflective mask blank, a reflective mask, and a method for manufacturing a semiconductor device capable of, for example, preventing reduction of a reflectance of a multilayer reflective film due to formation of a silicide in a protective film.
A substrate with a multilayer reflective film 100 comprises a substrate 10, a multilayer reflective film 12 disposed on the substrate 10, and a protective film 18 disposed on the multilayer reflective film 12. The protective film 18 comprises a SiN material layer comprising silicon (Si) and nitrogen (N) or a SiC material layer comprising silicon (Si) and carbon (C) on a side in contact with the multilayer reflective film 12. The SiN material layer or the SiC material layer comprises an oxide of at least one metal selected from magnesium (Mg), aluminum (Al), titanium (Ti), yttrium (Y), and zirconium (Zr).-
公开(公告)号：US20210096456A1
公开(公告)日：2021-04-01
申请号：US17030208
申请日：2020-09-23
Applicant: HOYA Corporation
Inventor： Kota SUZUKI , Takahiro ONOUE
IPC: G03F1/60 , G03F1/24 , C03C17/36 , H01L21/027
Abstract: A multilayered-reflective-film-provided substrate includes: a substrate; a multilayered reflective film provided on the substrate; and a protective film provided on the multilayered reflective film, in which the protective film includes ruthenium (Ru) and at least one additive material selected from aluminum (Al), yttrium (Y), zirconium (Zr), rhodium (Rh), and hafnium (Hf), and a content of the additive material is 5% or more by atom and less than 50% by atom.
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公开(公告)号：US20230133304A1
公开(公告)日：2023-05-04
申请号：US17913099
申请日：2021-03-22
Applicant: HOYA CORPORATION
Inventor： Kota SUZUKI , Masanori NAKAGAWA , Takahiro ONOUE
Abstract: Provided are a substrate with a multilayer reflective film, a reflective mask blank, a reflective mask, and a method for manufacturing a semiconductor device, having high resistance to an etching gas used for etching an absorber film and/or an etching mask film and capable of suppressing occurrence of blister.
A substrate with a multilayer reflective film 100 comprises a substrate 10, a multilayer reflective film 12 formed on the substrate 10, and a protective film 14 formed on the multilayer reflective film 12. The protective film 14 comprises ruthenium (Ru), rhodium (Rh), and at least one additive element selected from the group consisting of titanium (Ti), zirconium (Zr), yttrium (Y), niobium (Nb), vanadium (V), and hafnium (Hf).-
Patent Agency Ranking
公开(公告)号：US20220269161A1
公开(公告)日：2022-08-25
申请号：US17626330
申请日：2020-08-24
Applicant: HOYA CORPORATION
Inventor： Kota SUZUKI , Kayo CHAEN
Abstract: Provided is a substrate with a thin film for manufacturing a reflective mask that at least does not adversely affect performance of the reflective mask even when a thin film of a substrate with the thin film such as a reflective mask blank comprises impurities.
A substrate with a thin film comprises: a substrate; and at least one thin film formed on a main surface of the substrate. The thin film comprises a matrix material constituting the thin film and a small-amount material other than the matrix material. When secondary ion intensity emitted from the thin film is measured by time-of-flight secondary ion mass spectrometry (TOF-SIMS), a ratio (I2/I1) of secondary ion intensity (I2) of at least one of the small-amount material in the thin film to secondary ion intensity (I1) of the matrix material is more than 0 and 0.300 or less.-
公开(公告)号：US20240411220A1
公开(公告)日：2024-12-12
申请号：US18701869
申请日：2022-10-26
Applicant: HOYA CORPORATION
Inventor： Masanori NAKAGAWA , Kota SUZUKI , Hibiki KISHIDA
IPC: G03F1/24 , H01L21/033
Abstract: [Problem] To obtain a substrate with a multilayer reflective film capable of suppressing a decrease in reflectance of a multilayer reflective film with respect to EUV light for the substrate with a multilayer reflective film having a structure in which a protective film containing metal is disposed.
[Solution] A substrate with a multilayer reflective film includes a substrate, a multilayer reflective film on the substrate, and a protective film on the multilayer reflective film. The protective film includes a silicon-containing layer, a first layer, a second layer, and a third layer in this order on the multilayer reflective film. The protective film contains metal and nitrogen. When a nitrogen content of the first layer is represented by N1, a nitrogen content of the second layer is represented by N2, and a nitrogen content of the third layer is represented by N3, N2 is larger than N1 and N3.-
公开(公告)号：US20240231214A9
公开(公告)日：2024-07-11
申请号：US18277648
申请日：2022-02-22
Applicant: HOYA CORPORATION
Inventor： Teiichiro UMEZAWA , Kota SUZUKI
Abstract: Provided are a substrate with a multilayer reflective film, a reflective mask blank, a reflective mask, and a method for manufacturing a semiconductor device capable of, for example, preventing reduction of a reflectance of a multilayer reflective film due to formation of a silicide in a protective film.
A substrate with a multilayer reflective film 100 comprises a substrate 10, a multilayer reflective film 12 disposed on the substrate 10, and a protective film 18 disposed on the multilayer reflective film 12. The protective film 18 comprises a SiN material layer comprising silicon (Si) and nitrogen (N) or a SiC material layer comprising silicon (Si) and carbon (C) on a side in contact with the multilayer reflective film 12. The SiN material layer or the SiC material layer comprises an oxide of at least one metal selected from magnesium (Mg), aluminum (Al), titanium (Ti), yttrium (Y), and zirconium (Zr).-
公开(公告)号：US20230418148A1
公开(公告)日：2023-12-28
申请号：US18039192
申请日：2021-12-16
Applicant: HOYA CORPORATION
Inventor： Ikuya FUKASAWA , Kota SUZUKI , Masanori NAKAGAWA
IPC: G03F1/24
CPC classification number: G03F1/24
Abstract: Provided are a substrate with a multilayer reflective film comprising a protective film having high resistance to a fluorine-based etching gas used in an absorber pattern repair step without reducing a reflectance of the multilayer reflective film, a reflective mask blank, and a reflective mask.
A substrate with a multilayer reflective film 100 comprises a substrate 10, a multilayer reflective film 12 disposed on the substrate 10, and a protective film 14 disposed on the multilayer reflective film 12. The protective film 14 comprises a first metal and a second metal. Standard free energy of formation of a fluoride of the first metal is higher than standard free energy of formation of RuF5. The second metal has an extinction coefficient of 0.03 or less at a wavelength of 13.5 nm.-
公开(公告)号：US20230072220A1
公开(公告)日：2023-03-09
申请号：US17793329
申请日：2021-03-11
Applicant: HOYA CORPORATION
Inventor： Masanori NAKAGAWA , Kota SUZUKI , Takashi UCHIDA
Abstract: Provided is a substrate with a multilayer reflective film capable of sufficiently reducing a reflectance of the multilayer reflective film with respect to EUV exposure light and preventing occurrence of a phenomenon in which a surface of a protective film on the multilayer reflective film swells and a phenomenon in which the protective film peels off.
A substrate with a multilayer reflective film 110 comprises a multilayer reflective film 5 and a protective film 6 in this order on a main surface of a substrate 1. The substrate 1 contains silicon, titanium, and oxygen as main components, and further contains hydrogen. The multilayer reflective film 5 has a structure in which a low refractive index layer and a high refractive index layer are alternately layered. The multilayer reflective film 5 comprises hydrogen. Hydrogen in the multilayer reflective film 5 has an atomic number density of 7.0×10−3 atoms/nm3 or less.
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