METHOD AND DEVICE FOR MEASURING LARGE-AREA AND MASSIVE SCATTERED FIELD IN NANOSCALE
    1.
    发明申请
    METHOD AND DEVICE FOR MEASURING LARGE-AREA AND MASSIVE SCATTERED FIELD IN NANOSCALE 有权
    用于测量纳米尺度的大面积和大尺度散射场的方法和装置

    公开(公告)号:US20160187248A1

    公开(公告)日:2016-06-30

    申请号:US14754759

    申请日:2015-06-30

    Abstract: A device for measuring a large-area and massive scattered field in nanoscale. The device includes a polarization state generator disposed on an output optical path of a laser source, a polarization state analyzer operating to demodulate a polarized light beam emitted thereon, a first objective lens and a first lens disposed on an optical path of a sample stage, and a scanning mirror disposed on an optical path in front of or at the rear of the polarization state generator.

    Abstract translation: 用于测量纳米级大面积和大面积散射场的装置。 该装置包括设置在激光源的输出光路上的偏振状态发生器,对其上发射的偏振光进行解调的偏振态分析器,设置在样品台的光路上的第一物镜和第一透镜, 以及设置在偏振态发生器的前方或后方的光路上的扫描镜。

    HIGH TEMPORAL RESOLUTION MUELLER MATRIX ELLIPTICAL POLARIZATION MEASURING DEVICE AND METHOD

    公开(公告)号:US20190369006A1

    公开(公告)日:2019-12-05

    申请号:US16126230

    申请日:2018-09-10

    Abstract: The present invention discloses a high temporal resolution Mueller matrix elliptical polarization measuring device and method. In the incident light path, four polarization modulation channels are used to split and modulate a pulse laser beam into four polarized beams in independent polarization states. Due to different light path differences, the pulse beams have a time interval of several nanoseconds, and thus four pulse laser beams are successively irradiated on the surface of the sample. In the reflected light path, six channel polarization detection modules are used to synchronously measure the Stokes vectors of the reflected beams on the sample surface. By using known incident and reflected Stokes vectors of the four pulse beams, linear equations can be solved to obtain the Mueller matrix of the sample.

    METHOD FOR MEASURING DIELECTRIC TENSOR OF MATERIAL

    公开(公告)号:US20210262922A1

    公开(公告)日:2021-08-26

    申请号:US17054170

    申请日:2020-05-15

    Abstract: The disclosure relates to a method for measuring a dielectric tensor of a material. Firstly, a partial conversion matrix Tp and a transmission matrix Tt are determined by a predetermined initial value ε(E) of the dielectric tensor of the material to be measured, thereby obtaining a transfer matrix of an electromagnetic wave on a surface of the material to be measured by the partial conversion matrix Tp, the transmission matrix Tt, and an incident matrix Ti. Then, a theoretical Mueller matrix spectrum MMCal(E) of the material to be measured is determined by the transfer matrix Tm. A fitting analysis is performed on the theoretical Mueller matrix spectrum MMCal(E) and a measured Mueller matrix spectrum MMExp(E) of the material to be measured to obtain the dielectric tensor of the material to be measured. The obtained result is comprehensive and reliable, which is suitable for solving dielectric tensors of various materials.

    METHOD FOR EXTRACTING CRITICAL DIMENSION OF SEMICONDUCTOR NANOSTRUCTURE
    5.
    发明申请
    METHOD FOR EXTRACTING CRITICAL DIMENSION OF SEMICONDUCTOR NANOSTRUCTURE 有权
    提取半导体纳米结构关键尺寸的方法

    公开(公告)号:US20130325760A1

    公开(公告)日:2013-12-05

    申请号:US13754925

    申请日:2013-01-31

    CPC classification number: G06N99/005

    Abstract: A method for extracting a critical dimension of a semiconductor nanostructure. The method includes: 1) determining a value range for each parameter to be extracted, whereby generating an electronic spectra database, and employing training spectra and support vector machine (SVM) training networks for training of SVMs; 2) employing the SVMs after training to map measured spectra to yield a corresponding electronic spectra database; and 3) employing a searching algorithm to search for an optimum simulation spectrum in the corresponding electronic spectra database, simulation parameters corresponding to the simulation spectrum being the critical dimension of the semiconductor nanostructure to be extracted.

    Abstract translation: 一种用于提取半导体纳米结构的临界尺寸的方法。 该方法包括:1)确定要提取的每个参数的值范围,从而生成电子光谱数据库,并使用训练光谱和支持向量机(SVM)训练网络进行训练; 2)训练后采用SVM映射测得的光谱,得到相应的电子光谱数据库; 和3)采用搜索算法在对应的电子光谱数据库中搜索最佳模拟光谱,对应于模拟光谱的模拟参数是要提取的半导体纳米结构的临界尺寸。

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