公开(公告)号：US20200017964A1

公开(公告)日：2020-01-16

申请号：US16447225

申请日：2019-06-20

Applicant: Hermes-Epitek Corp.

Inventor： Yu-Sheng LIANG ,  Chien-Chin CHIU ,  Tsan-Hua HUANG ,  Oishi TAKAHIRO ,  Suda NOBORU ,  Komeno JUNJI

IPC: C23C16/44 ,  C23C16/458

Abstract: A reaction chamber for vapor deposition apparatus, comprises a susceptor to carry substrates, a ceiling, an upper cavity, and protrusions. The ceiling comprises a front surface faces the substrates and comprises front convex parts and front concave parts with an interlaced arrangement to form a convex-concave surface. The ceiling also comprises a rear surface opposites to the front surface and comprises rear convex parts and rear concave parts corresponded to the front concave parts and the front convex parts respectively. The upper cavity opposites to the rear surface and separated to the rear convex parts to define a first flow channel. The protrusions are disposed in the rear concave parts and separated to a side wall and a bottom wall of the rear concave parts to define a second flow channel which is connected to the first flow channel to introduce a cooling fluid.