公开(公告)号：US20190056430A1

公开(公告)日：2019-02-21

申请号：US15915942

申请日：2018-03-08

Applicant: Hermes-Epitek Corp.

Inventor： Po-Ju KU ,  Wei-Ting CHEN

IPC: G01R1/073 ,  G01R31/28

Abstract: A plane correcting device comprises a first base disposed on a test head of a semiconductor testing apparatus; a second base disposed on the prober stage of the semiconductor testing apparatus and opposite to the first base; a plurality of correcting rods disposed between the first base and the second base, wherein a protruding height of each correcting rods may be adjusted to correct the prober stage to a predetermined plane; and a plurality of fixing units disposed on the first base or the second base to fix relative position of the prober stage and the test head. The present invention also provides a semiconductor testing apparatus including the plane correcting device.

公开(公告)号：US09613875B2

公开(公告)日：2017-04-04

申请号：US15194107

申请日：2016-06-27

Applicant: HERMES-EPITEK CORP.

Inventor： Takashi Kobayashi ,  Po-Jung Lin ,  Che-Lin Chen ,  Bu-Chin Chung

IPC: H01L21/00 ,  H01L21/67 ,  H01L21/02 ,  H01L21/66 ,  C23C16/22

CPC classification number: H01L22/26 ,  C23C16/22 ,  C30B25/16 ,  C30B29/406 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/67288 ,  H01L22/12

Abstract: A system for manufacturing semiconductor epitaxy structure includes a deposition apparatus, a curvature monitor system and a control unit. The deposition apparatus is configured for sequentially depositing a buffer layer, a first epitaxy layer, an insertion layer, a second epitaxy layer on a substrate. The curvature monitor system is configured for monitoring a curvature value of the semiconductor epitaxy structure. The control unit is configured for controlling the deposition apparatus to stop depositing the buffer layer, the first epitaxy layer, the insertion layer and the second epitaxy layer according to the curvature value of the semiconductor epitaxy structure measured by the curvature monitor system. The above-mentioned system for manufacturing semiconductor epitaxy structure is able to effectively control the strain of the semiconductor epitaxy structure during growth. A method for manufacturing semiconductor epitaxy structure is also disclosed.

公开(公告)号：US09521750B2

公开(公告)日：2016-12-13

申请号：US14713424

申请日：2015-05-15

Applicant: Hermes-Epitek Corp.

Inventor： Chien-Yao Hung

IPC: H05K1/11 ,  H05K1/02 ,  H05K3/40

CPC classification number: H05K1/115 ,  H05K1/0296 ,  H05K3/4007 ,  H05K2201/09063 ,  H05K2201/09227

Abstract: The present invention relates to a printed circuit board of a probe card. The printed circuit board comprises a first side, a second side, a plurality of plated through holes and at least one electric barrier. The first side includes a plurality of first contacts and a plurality of second contacts respectively corresponding to the first contacts. The second side includes a plurality of third contacts respectively corresponding to the second contacts and a plurality of second-side traces extended to a predefined/specific region. The plated through holes penetrate through the first side and the second side, so that the third contacts are electrically connected to the second contacts. The at least one electric barrier is installed among at least two of the second side traces.

Abstract translation: 本发明涉及一种探针卡的印刷电路板。 印刷电路板包括第一侧，第二侧，多个电镀通孔和至少一个电屏障。 第一侧包括分别对应于第一触点的多个第一触点和多个第二触点。 第二侧包括分别对应于第二触点的多个第三触点和延伸到预定/特定区域的多个第二侧迹线。 电镀通孔穿过第一侧和第二侧，使得第三触头电连接到第二触点。 所述至少一个电屏障安装在所述第二侧迹线中的至少两个中。

公开(公告)号：US09408293B2

公开(公告)日：2016-08-02

申请号：US14717240

申请日：2015-05-20

Applicant: Hermes-Epitek Corp.

Inventor： Chien-Yao Hung

IPC: H05K1/00 ,  G01R31/00 ,  G01R31/20 ,  H05K1/02

CPC classification number: H05K1/02 ,  G01R1/07378 ,  H05K1/142 ,  H05K2203/049

Abstract: The invention relates to a printed circuit board structure, which comprises a first body, a second body and a sleeve. The sleeve is arranged between and connected with the first body and the second body so as to generate a differential height between the first body and the second body. Via the differential height are solved the problems of insufficient probe stiffness and poor wafer-sort quality, which is caused by decreasing the probe diameter to adapt to miniaturized chips.

Abstract translation: 本发明涉及一种印刷电路板结构，其包括第一主体，第二主体和套筒。 所述套筒布置在所述第一主体和所述第二主体之间并与所述第二主体连接，从而在所述第一主体和所述第二主体之间产生差异高度。 通过差分高度解决了探针刚度不足和晶片分选质量差的问题，这是由于减小探头直径以适应小型化芯片而引起的。

公开(公告)号：US20240068124A1

公开(公告)日：2024-02-29

申请号：US18454566

申请日：2023-08-23

Applicant: HERMES-EPITEK CORP.

Inventor： CHIH-LUNG LIN ,  PO-FEI YANG ,  CHIE-SHENG LIU ,  CHUNG-HAO LIN ,  HSIN-CHEN YEH ,  HAO-WEN WU

IPC: C30B23/02 ,  C30B29/36

CPC classification number: C30B23/025 ,  C30B29/36

Abstract: An apparatus for producing silicon carbide crystal is provided and includes a composite structure formed by a plurality of graphite layers and silicon carbide seed crystals, wherein a density or thickness of each layer of graphite is gradually adjusted to reduce a difference of a thermal expansion coefficient and Young's modulus between the graphite layers and silicon carbide. The composite structure can be stabilized on a top portion or an upper cover of a crucible made of graphite, thereby preventing the silicon carbide crystal from falling off.

公开(公告)号：US20200017964A1

公开(公告)日：2020-01-16

申请号：US16447225

申请日：2019-06-20

Applicant: Hermes-Epitek Corp.

Inventor： Yu-Sheng LIANG ,  Chien-Chin CHIU ,  Tsan-Hua HUANG ,  Oishi TAKAHIRO ,  Suda NOBORU ,  Komeno JUNJI

IPC: C23C16/44 ,  C23C16/458

Abstract: A reaction chamber for vapor deposition apparatus, comprises a susceptor to carry substrates, a ceiling, an upper cavity, and protrusions. The ceiling comprises a front surface faces the substrates and comprises front convex parts and front concave parts with an interlaced arrangement to form a convex-concave surface. The ceiling also comprises a rear surface opposites to the front surface and comprises rear convex parts and rear concave parts corresponded to the front concave parts and the front convex parts respectively. The upper cavity opposites to the rear surface and separated to the rear convex parts to define a first flow channel. The protrusions are disposed in the rear concave parts and separated to a side wall and a bottom wall of the rear concave parts to define a second flow channel which is connected to the first flow channel to introduce a cooling fluid.

公开(公告)号：US20190240691A1

公开(公告)日：2019-08-08

申请号：US16264601

申请日：2019-01-31

Applicant: Hermes Epitek Corp.

Inventor： Yung-Min PAI ,  Pao-Chi CHI ,  Jih-Jenn HUANG

IPC: B05B12/20 ,  B05B15/60

CPC classification number: B05B12/20 ,  B05B15/60

Abstract: A slurry spraying mask includes a holding portion and a mask portion. The holding portion includes a holding portion opening. The mask portion includes a first layer and a second layer. The first layer includes a first tapered structure, the second layer includes a second tapered structure. The first tapered structure and the second tapered structure are arranged coaxially. A gap exists between the first layer and the second layer. The apex of the first tapered structure includes a first aperture, the apex of the second tapered structure includes a second aperture, and the second aperture is overlapped with the first aperture. The apex of the second tapered structure passes through the holding portion opening such that the mask portion is localized to the holding portion.

公开(公告)号：US11097299B2

公开(公告)日：2021-08-24

申请号：US16264601

申请日：2019-01-31

Applicant: Hermes Epitek Corp.

Inventor： Yung-Min Pai ,  Pao-Chi Chi ,  Jih-Jenn Huang

IPC: B05B12/20 ,  B05B15/60

Abstract: A slurry spraying mask includes a holding portion and a mask portion. The holding portion includes a holding portion opening. The mask portion includes a first layer and a second layer. The first layer includes a first tapered structure, the second layer includes a second tapered structure. The first tapered structure and the second tapered structure are arranged coaxially. A gap exists between the first layer and the second layer. The apex of the first tapered structure includes a first aperture, the apex of the second tapered structure includes a second aperture, and the second aperture is overlapped with the first aperture. The apex of the second tapered structure passes through the holding portion opening such that the mask portion is localized to the holding portion.

公开(公告)号：US20170207303A1

公开(公告)日：2017-07-20

申请号：US15477598

申请日：2017-04-03

Applicant: Hermes-Epitek Corp.

Inventor： Po-Jung LIN

IPC: H01L29/15 ,  H01L29/20 ,  H01L21/02 ,  H01L29/205

CPC classification number: H01L29/151 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/02507 ,  H01L21/0254 ,  H01L29/2003 ,  H01L29/205

Abstract: The present invention is directed to a semiconductor multilayer structure. A semiconductor multilayer structure comprises a silicon substrate, a buffer layer deposited on the silicon substrate, and the buffer layer is an aluminum contained nitride buffer layer; a superlattice layer deposited on the buffer layer, wherein the superlattice layer comprises at least a gallium nitride layer and at least a aluminum nitride layer stacked together in order, and a diffusion layer formed between the aluminum nitride layer and the gallium nitride layer, wherein the diffusion layer is an aluminum gallium nitride layer; and a epitaxy layer deposited on the superlattice layer. By utilizing the present invention, the lattice mismatch between MN and GaN of the superlattice layer can be reduced, and efficiently accumulated can be maintained without causing relaxation.

公开(公告)号：US20170117136A1

公开(公告)日：2017-04-27

申请号：US15397267

申请日：2017-01-03

Applicant: Hermes-Epitek Corp.

Inventor： Takashi KOBAYASHI ,  Po-Jung LIN ,  Chih-Sheng WU ,  Bu-Chin CHUNG

IPC: H01L21/02 ,  H01L29/20 ,  H01L29/205 ,  H01L29/15

CPC classification number: H01L21/0254 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02505 ,  H01L29/155 ,  H01L29/2003 ,  H01L29/205 ,  H01L33/0075

Abstract: The present invention is directed to a fabrication method of a semiconductor multilayer structure. By utilizing the indium-containing catalyst and/or gallium-containing catalyst, the aluminum migration can be enhanced to increase quality and flatness of the aluminum contained nitride buffer layer. Furthermore, the costs and energy consumption can be reduced too.