SINTERABLE BONDING MATERIAL USING COPPER NANOPARTICLES, PROCESS FOR PRODUCING SAME, AND METHOD OF BONDING ELECTRONIC COMPONENT
    1.
    发明申请
    SINTERABLE BONDING MATERIAL USING COPPER NANOPARTICLES, PROCESS FOR PRODUCING SAME, AND METHOD OF BONDING ELECTRONIC COMPONENT 审中-公开
    使用铜纳米粒子的烧结材料,其制造方法以及电子部件的结合方法

    公开(公告)号:US20130105980A1

    公开(公告)日:2013-05-02

    申请号:US13659466

    申请日:2012-10-24

    Applicant: Hitachi, Ltd.

    Abstract: Disclosed is a sinterable bonding material which is a liquid or a paste containing copper nanoparticles having a particle diameter of 1,000 nm or less, in which the copper nanoparticles have one or more particle diameter peaks of a number-based grain size distribution within a class of particle diameter of 1 to 35 nm and within a class of particle diameter of more than 35 nm and 1,000 nm or less respectively, and in which the copper nanoparticles include individual particles (primary particles) and secondary particles, each of the secondary particles being a fused body of the primary particles. Thus, oxidation resistance and bondability are made compatible in a sinterable bonding material using copper nanoparticles, and ion migration is suppressed in a bonded portion of a semiconductor device, etc. manufactured by using the sinterable bonding material.

    Abstract translation: 公开了一种可烧结接合材料,其是含有粒径为1,000nm以下的铜纳米颗粒的液体或糊料,其中铜纳米颗粒具有一类或多种粒径分布的粒径分布的一个或多个粒径峰 粒径为1〜35nm,粒径分别为35nm以上且1000nm以下,其中,铜纳米粒子包括单粒子(一次粒子)和二次粒子,二次粒子为 融合体的初级粒子。 因此,使用铜纳米粒子的可烧结接合材料中的抗氧化性和结合性相容,并且通过使用可烧结接合材料制造的半导体器件等的接合部分抑制了离子迁移。

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