公开(公告)号：US20240047222A1

公开(公告)日：2024-02-08

申请号：US17642356

申请日：2021-04-22

Applicant: Hitachi High-Tech Corporation

Inventor： Kazunori Shinoda ,  Hirotaka Hamamura ,  Kenji Maeda ,  Kenetsu Yokogawa ,  Kenji Ishikawa ,  Masaru Hori

IPC: H01L21/311 ,  H01L21/02 ,  H01L21/3065

CPC classification number: H01L21/31122 ,  H01L21/02183 ,  H01L21/3065

Abstract: Provided is an etching technique providing higher uniformity of etching amount and a higher yield of etching processing. An etching method for etching a film layer as a processing object containing nitride of transition metal, the film layer being disposed on a surface of a wafer, includes a step of supplying reactive particles containing fluorine and hydrogen but containing no oxygen to a surface of the film layer to form a reaction layer on the surface of the film layer, and a step of eliminating the reaction layer by heating the film layer.

公开(公告)号：US10672595B2

公开(公告)日：2020-06-02

申请号：US15982827

申请日：2018-05-17

Applicant: HITACHI HIGH-TECH CORPORATION

Inventor： Takeshi Ohmori ,  Daisuke Satou ,  Tatehito Usui ,  Satomi Inoue ,  Kenji Maeda

IPC: H01J37/32

Abstract: A plasma apparatus of processing a wafer disposed in a processing chamber using plasma includes one window, another window, a light receiving unit, a light source, and an optical branching unit which is disposed between the light source and the other window, branches light emitted by the light source to an optical path toward the processing chamber and an optical path in other direction, and reflects light in the processing chamber from the other window, and a detection unit which detects the light having been emitted from the plasma and received by the light receiving unit using one branched light and other branched and reflected light. The apparatus processes the wafer according to a condition for the processing which is adjusted based on a result of the detection.

公开(公告)号：US12237174B2

公开(公告)日：2025-02-25

申请号：US17642356

申请日：2021-04-22

Applicant: Hitachi High-Tech Corporation

Inventor： Kazunori Shinoda ,  Hirotaka Hamamura ,  Kenji Maeda ,  Kenetsu Yokogawa ,  Kenji Ishikawa ,  Masaru Hori

IPC: H01L21/311 ,  H01L21/02 ,  H01L21/3065

Abstract: Provided is an etching technique providing higher uniformity of etching amount and a higher yield of etching processing. An etching method for etching a film layer as a processing object containing nitride of transition metal, the film layer being disposed on a surface of a wafer, includes a step of supplying reactive particles containing fluorine and hydrogen but containing no oxygen to a surface of the film layer to form a reaction layer on the surface of the film layer, and a step of eliminating the reaction layer by heating the film layer.

公开(公告)号：US11557463B2

公开(公告)日：2023-01-17

申请号：US17160801

申请日：2021-01-28

Applicant: Hitachi High-Tech Corporation

Inventor： Hiroyuki Kobayashi ,  Nobuya Miyoshi ,  Kazunori Shinoda ,  Kenji Maeda ,  Yutaka Kouzuma ,  Satoshi Sakai ,  Masaru Izawa

IPC: H01J37/32 ,  H01L21/67

Abstract: In a vacuum processing apparatus including: a vacuum container including a processing chamber therein; a plasma formation chamber; plate members being arranged between the processing chamber and the plasma formation chamber; and a lamp and a window member being arranged around the plate members, in order that a wafer and the plate members are heated by electromagnetic waves from the lamp, a bottom surface and a side surface of the window member is formed of a member transmitting the electromagnetic waves therethrough.

公开(公告)号：US10892158B2

公开(公告)日：2021-01-12

申请号：US16371502

申请日：2019-04-01

Applicant: HITACHI HIGH-TECH CORPORATION

Inventor： Makoto Miura ,  Yohei Ishii ,  Satoshi Sakai ,  Kenji Maeda

IPC: H01L21/02 ,  H01L29/165 ,  H01L29/66 ,  H01L29/78 ,  H01L29/10 ,  H01L21/8238 ,  H01L21/67 ,  H01L21/3065 ,  H01L21/033 ,  H01L27/092

Abstract: A manufacturing process of a semiconductor device including a SiGe channel can form a Si segregation layer for protecting the SiGe channel without damaging the SiGe channel. A manufacturing method of a semiconductor device includes: a first step for performing plasma processing on a semiconductor substrate having a silicon layer and a silicon germanium layer formed on the silicon layer under a first condition to expose the silicon germanium layer; and a second step for performing plasma processing on the semiconductor substrate under a second condition to segregate silicon on the surface of the exposed silicon germanium layer. The silicon germanium layer or layers lying adjacent to the silicon germanium layer can be etched under the first condition, hydrogen plasma processing is performed under the second condition, and the first step and the second step are executed in series in the same processing chamber of a plasma processing apparatus.