公开(公告)号：US12014903B2

公开(公告)日：2024-06-18

申请号：US16958313

申请日：2019-07-18

Applicant: Hitachi High-Tech Corporation

Inventor： Tetsuo Kawanabe ,  Motohiro Tanaka ,  Takahiro Sakuragi ,  Kohei Sato

IPC: H01J37/32

CPC classification number: H01J37/32449 ,  H01J37/32082 ,  H01J37/32678 ,  H01J2237/3343

Abstract: In a plasma processing apparatus including a plasma processing chamber disposed in a vacuum chamber, a sample stage disposed in the plasma processing chamber and on which a sample is placed, in the vacuum chamber, a second shower plate disposed above the sample stage, a first shower plate disposed above the second shower plate, and a dielectric window disposed above the first shower plate, first gas is supplied from a first gas supply unit to a space between the dielectric window and the first shower plate, and second gas is supplied from a second gas supply unit to a space between the first shower plate and the second shower plate.

公开(公告)号：US20240194489A1

公开(公告)日：2024-06-13

申请号：US17908177

申请日：2021-10-22

Applicant: Hitachi High-Tech Corporation

Inventor： Yusuke Nakatani ,  Yasushi Sonoda ,  Motohiro Tanaka

IPC: H01L21/311 ,  H01L21/02 ,  H01L21/28 ,  H01L29/423 ,  H01L29/49 ,  H01L29/66

CPC classification number: H01L21/31122 ,  H01L21/02181 ,  H01L21/28255 ,  H01L29/42392 ,  H01L29/4908 ,  H01L29/66439

Abstract: HfO2 is to be selectively laterally etched and to SiGe. In order to manufacture a device in a next generation three-dimensional structure such as GAA, in a plasma processing method that laterally etches HfO2 using a vacuum processing apparatus that is capable of perform radical etching, a flow rate ratio is set such that an SiCl4 gas is added to a BCl3 gas, a flow rate ratio of the SiCl4 gas at this time is lower than a flow rate ratio of the BCl3 gas, and an SiClx deposition to be deposited on SiGe is larger than an SiClx deposition to be deposited on HfO2, and thus HfO2 is selectively etched to SiGe.

公开(公告)号：US20240194450A1

公开(公告)日：2024-06-13

申请号：US17907857

申请日：2021-06-28

Applicant: Hitachi High-Tech Corporation

Inventor： Yasushi Sonoda ,  Motohiro Tanaka ,  Yusuke Nakatani

IPC: H01J37/32 ,  H01L21/67

CPC classification number: H01J37/32201 ,  H01J2237/327 ,  H01L21/67069

Abstract: A plasma processing device and method which allow control of a density ratio between ions and radicals, including a processing chamber, a radio frequency power supply which supplies microwave radio frequency power for plasma generation, a magnetic field generating mechanism which generates a magnetic field in the processing chamber, a sample stand disposed in the processing chamber, and a shielding plate disposed above the sample stand for shielding incidence of an ions onto the sample stand. The magnetic field generating mechanism includes a coil disposed around an outer periphery of the processing chamber, and a power supply connected to the coil. The mechanism allows a power supply of the magnetic field generating mechanism or the radio frequency power supply to control a plasma generating position with respect to the shielding plate, and to generate plasma by periodically changing the plasma generating position vertically with respect to the shielding plate.

公开(公告)号：US20220415618A1

公开(公告)日：2022-12-29

申请号：US16958313

申请日：2019-07-18

Applicant: Hitachi High-Tech Corporation

Inventor： Tetsuo Kawanabe ,  Motohiro Tanaka ,  Takahiro Sakuragi ,  Kohei Sato

IPC: H01J37/32

Abstract: In a plasma processing apparatus including a processing chamber disposed in a vacuum chamber, a sample stage disposed in the processing chamber and on which a sample is placed, in the vacuum chamber, a second shower plate disposed above the sample stage, a first shower plate disposed above the second shower plate, and a dielectric window disposed above the first shower plate, first gas is supplied from a first gas supply unit to a space between the dielectric window and the first shower plate, and second gas is supplied from a second gas supply unit to a space between the first shower plate and the second shower plate.

公开(公告)号：US20220319809A1

公开(公告)日：2022-10-06

申请号：US17273838

申请日：2019-12-23

Applicant: Hitachi High-Tech Corporation

Inventor： Taku Iwase ,  Naoyuki Kofuji ,  Yasushi Sonoda ,  Yusuke Nakatani ,  Motohiro Tanaka

IPC: H01J37/32

Abstract: An object of the invention is to provide a plasma processing apparatus capable of both isotropic etching in which a flux of ions to a sample is reduced and anisotropic etching in which ions are incident on a sample in the same chamber. For this purpose, the invention includes: a processing chamber in which a sample is subjected to plasma processing; a radio frequency power source configured to supply radio frequency power for generating plasma through a first member of a dielectric material disposed above the processing chamber; a magnetic field forming mechanism configured to form a magnetic field inside the processing chamber; a sample stage where the sample is placed; and a second member disposed between the first member and the sample stage and having a through hole formed therein, in which the through hole is formed at a position where a distance thereof from a center of the second member is a predetermined distance or more, and a distance from the first member to the second member is a distance such that a density of plasma generated between the first member and the second member is a cutoff density or higher.

公开(公告)号：US10699909B2

公开(公告)日：2020-06-30

申请号：US14625931

申请日：2015-02-19

Applicant: HITACHI HIGH-TECH CORPORATION

Inventor： Yasushi Sonoda ,  Motohiro Tanaka

IPC: H01J37/32 ,  H01L21/308 ,  H01L21/3065

Abstract: A plasma processing apparatus includes a processing chamber configured to perform a plasma processing on a sample, a first radio frequency power supply configured to generate a plasma, a sample stage configured to place the sample thereon, a second radio frequency power supply configured to supply a radio frequency power to the sample stage, a mass flow controller configured to supply a gas into the processing chamber, and a control device configured to change the radio frequency power supplied from the first radio frequency power supply or the second radio frequency power supply based on a change of plasma impedance after a first gas is switched to a second gas.