公开(公告)号：US20170179378A1

公开(公告)日：2017-06-22

申请号：US15387127

申请日：2016-12-21

Applicant: IMEC VZW

Inventor： Gouri Sankar Kar ,  Jürgen Bömmels ,  Davide Crotti

IPC: H01L43/08 ,  H01L43/12

CPC classification number: H01L43/08 ,  H01L43/02 ,  H01L43/12

Abstract: The disclosed technology generally relates to semiconductor devices and more particularly to semiconductor devices having an integrated magnetic tunnel junction (MTJ), and relates to methods of fabricating the semiconductor devices. In one aspect, a semiconductor device includes a stack including successive layers of: a first metallization layer, a first dielectric layer, a second metallization layer, a second dielectric layer, and a third metallization layer. A magnetic tunnel junction (MTJ) device is formed in the first dielectric layer and in the second metallization layer and electrically connected to a first metallization layer and the third metallization layer.

公开(公告)号：US10170692B2

公开(公告)日：2019-01-01

申请号：US15387127

申请日：2016-12-21

Applicant: IMEC VZW

Inventor： Gouri Sankar Kar ,  Jürgen Bömmels ,  Davide Crotti

IPC: H01L27/22 ,  H01L43/08 ,  H01L43/12 ,  H01L43/02

Abstract: The disclosed technology generally relates to semiconductor devices and more particularly to semiconductor devices having an integrated magnetic tunnel junction (MTJ), and relates to methods of fabricating the semiconductor devices. In one aspect, a semiconductor device includes a stack including successive layers of: a first metallization layer, a first dielectric layer, a second metallization layer, a second dielectric layer, and a third metallization layer. A magnetic tunnel junction (MTJ) device is formed in the first dielectric layer and in the second metallization layer and electrically connected to a first metallization layer and the third metallization layer.